Nec Corporation

Yamatake Corporation

Nec Energy Devices, Ltd.

Hiroshi Hatakeyama

Takehiro Noguchi

Satoshi Tsuchiya

Shinako Kaneko

Hideaki Sasaki

Kazuaki Matsumoto

Yuukou Katou

Naofumi Suzuki

Masayoshi Tsuji

Takayoshi Anan

Takeshi Akagawa

Shinsaku Saitho

Kenichiro Yashiki

Kimiyoshi Fukatsu

Shinichi Ike

Hiroyuki Inagaki

Makiko Uehara

Shigeru Aoshima

Junichi Isetani

Ippei Waki

A gain-clamped semiconductor optical amplifier according to the present invention has a pair of DBR areasdisposed in sandwiching relation to gain areafor amplifying guided light. A portion of a waveguide of gain areacomprises MMI waveguide

Gain-clamped semiconductor optical amplifier

A flow sensor may be formed by bonding a sensor chip formed with a flow rate detecting part and a flow path-forming member that is provided on the sensor chip and is formed with a flow path for a fluid flowing in the flow rate detecting part to each other on the upper surface of a substrate. The flow path-forming member may be formed by bonding a transparent first flow path forming member and a second flow path-forming member to each other. The first flow path forming member has a plate shape, and is provided with an inflow port and a outflow port for the fluid to be measured, and the second flow path forming member has a plate shape, and is provided with a through hole that forms the flow path along the flow of the fluid flowing along the flow rate detecting part.

Flow sensor and manufacturing method therefor

The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength &#x3bb;to be given as 0.9&#xd7;&#x3bb;&#x2266;L&#x2266;1.1&#xd7;&#x3bb;, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nand n; the average refractive index within an optical path length &#x3bb;/4 in the semiconductor in contact with the dielectric DBR by n; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nand n, respective materials to be used are selected so as to satisfy the following conditions (1) and (2):()()(),&#x2003;&#x2003;(1)

Surface-emission type semiconductor laser

An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InGaAs (0.15&#x2266;x&#x2266;0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

Optical communication system and optical transmitter

A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index nof the resonator unit is larger than either the first layer or the second layer, and an optical length nL of the optical resonator unit has a relationship with an oscillating wavelength &#x3bb; of the surface emitting laser to satisfy the following relationship: 0.5&#x3bb;&#x3c;nL&#x2266;0.7&#x3bb;.

Surface emitting laser

VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, and

An air suction passage (A,B) is provided with a pick and place confirming sensor () comprising a gas flow sensor. The pick and place confirming sensor () measures the flow rate of air sucked in from an air suction port () of a pick and place nozzle (). The presence or absence of a part lifted to the pick and place nozzle () is detected on the basis of the measurement result.

Negative pressure attraction device and attraction confirming sensor

Growing community of inventors

Tokyo, Japan

Hiroshi Hatakeyama