Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha Lsi Development Laboratory

Hiroshi Harada

Yoshihiro Hirata

Haruhiko Abe

Masahiko Denda

Shinichi Sato

Natsuro Tsubouchi

Masanobu Tosa

Shigeru Harada

Takaaki Fukumoto

Wataru Wakamiya

Masao Nagatomo

Tatsuo Okamoto

Yoji Mashiko

Hajime Arai

Junichi Arima

Reiji Tamaki

Yoichi Akasaka

Hideo Kotani

Kazuo Mizuguchi

Sotoju Asai

Shigeji Kinoshita

Hirozo Takano

Isao Furuta

Yasuhiro Sekine

Junichi Mitsuhashi

Koichi Nagasawa

Sumio Nomoto

Shinpei Kayano

Hirokazu Miyoshi

Masayuki Kuwayama

Yoshio Kono

In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.

Method of forming a silicide film

A semiconductor device in accordance with the present invention comprises: a silicon substrate (1); an insulator layer (2) formed on the silicon substrate; a contact hole (8e) opened through the insulator layer; and a filler of doped silicon (5) grown on the silicon substrate (1) in the contact hole (8e) by solid phase precipitation from an alloy film (6) containing silicon and a doping element.

Method for fabricating semiconductor device

A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13'). In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of multilayered structure including multiple metal layers separated by the intervening layers is formed.

Homogeneous fine grained metal film on substrate and manufacturing

A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the metal and a reactive gas and serving to suppress growth of grains (12') in the respective metal layers and to suppress electromigration of grain boundaries (13'). In a method for manufacturing a metal film (6') having homogeneous and fine grains on a substrate in accordance with the present invention, one or more intervening layers (14) are formed by introducing a gas reactive with the metal film one or more times during deposition of the metal film, whereby intervening layers of a metal compound are interposed between the successively deposited metal layers. Thus, a metal film of a multilayered structure including multiple metal layers separated by the intervening layers is formed.

A method of manufacturing a semiconductor device comprises a step of preparing a semiconductor substrate (12) having a surface layer of silicon, a step of forming a conductive thin film (14) of a silicide composed of a metal having a high melting point and silicon on the semiconductor substrate (12), a step of forming an oxidation-resistant mask (18) on a first portion (14a) of the conductive thin film (14) and a step of converting a second, exposed, portion (19) of the conductive thin film (14) into an insulating film (19a) of a composite oxide composed of silicon oxide and an oxide of the subject metal by oxidizing the exposed portion (19) while maintaining the first portion (14a) of the conductive thin film (14) covered by the mask (18).

Method of manufacturing semiconductor devices

A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

Process for preparing semiconductor device

A rotating electric machinery comprises a stator; a rotor which is fixed to a rotor shaft and is driven by said motor; a fan which is rotatably connected through a bearing to said rotor to feed air in a predetermined direction; and at least one pair of magnets having a predetermined magnetic force which are fixed on either said rotor or said fan and a magnetic substance having a predetermined coercive force which is fixed on said fan or on said rotor to face said magnet with a desired gap.

Rotating electric machinery

A plasma treating apparatus includes: an air-core coil for generating a static magnetic field which is axially uniform and a high-frequency waveguide for generating a high-frequency electromagnetic field which is irregular in the axial direction of the air-core coil. A plasma generating glass tube is disposed in the high-frequency waveguide and adapted to be supplied with a gas and a plasma reaction bath held under a vacuum for receiving the plasma flow which is generated axially in the glass tube. A substrate platform is disposed in the reaction bath for supporting a substrate to be treated at a right angle with respect to the plasma flow. There is also included a magnetic field generating coil disposed outside of said reaction bath for shaping the plasma.

Plasma treating apparatus

A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 .mu.m or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor device with nitrogen ions using a direct ion beam imaging technique. The ion bombardment layer is converted into an oxidation-resistant layer by annealing, and an insulating oxide layer is formed on the surface of the substrate in regions other than those on which the oxidation-resistant layer is formed by oxidation. Thereafter, contact recesses are formed upon removing the oxidation-resistant layer.

Method for manufacturing semiconductor device

A multilayer interconnection is prepared by forming a stable insulating film on a nitride film which is formed on a first interconnection metal layer, and then, a second interconnection metal layer is formed on the insulating film. The insulating film can be made of aluminum oxide, an oxynitride or the other metal oxide. A silicon rich layer can be used for this purpose.

Process for preparing multilayer interconnection

A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and subsequently the thin metallic film is heat treated to remove the oxide by sublimation, whereby electrodes or wiring for a semiconductor integrated circuit are formed by the remaining thin metallic film.

Method of forming patterned refractory metal films by selective oxygen

A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.

Growing community of inventors

Itami, Japan

Hiroshi Harada