Agc Inc.

Asahi Glass Company, Limited

Hiroshi Hanekawa

Hirotomo Kawahara

Toshiyuki Uno

Nobutaka Aomine

Hiroyoshi Tanabe

Kazunobu Maeshige

Yuki Aoshima

Daijiro Akagi

Yusuke Ono

Sadatatsu Ikeda

Yoichi Sera

Tsuyoshi Kakuta

Kazuyuki Hayashi

Takuma Kato

Junichi Kageyama

Shunya Taki

Naoko Okada

Ryusuke Oishi

Keishi Tsukiyama

Taiga Fudetani

Masafumi Akita

Chikako Hanzawa

Yukihiro Iwata

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nof 5.300 or less and has an extinction coefficient kof 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nof 4.300 or less and has an extinction coefficient kof 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nof 2.500 or more and has an extinction coefficient kof 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Reflective mask blank for EUV lithography and substrate with conductive film

A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dof the absorbent layer satisfies a relationship of:−(×6+1) nm≤−(×6−1) nm

Reflective mask blank and reflective mask

A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.

Reflective mask blank for EUV lithography

A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

Reflective mask blank, reflective mask, and method for manufacturing reflective mask

A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cmto 5.40 g/cm.

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nnm of 5.300 or less and has an extinction coefficient knm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nnm of 4.300 or less and has an extinction coefficient knm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nnm of 2.500 or more and has an extinction coefficient knm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: where the integer i is 0 or 1, and dis represented by: where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.

A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2&#x3b8;) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2&#x3b8;: from 20&#xb0; to 50&#xb0; by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0&#xb0; or more.

A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

A protective film placed on an upper part of a metal film for protecting the metal film placed on a glass substrate. The protective film includes a silica film. The silica film has an extinction coefficient 'k' less than or equal to 1&#xd7;10, a refractive index 'n' greater than or equal to 1.466 at a wavelength of 632 nm, and a carbon content less than or equal to 3 atomic %.

Protective film, reflective member, and method for producing protective film

A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cmto 3800 cmin a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

Method of producing glass substrate and glass substrate

To provide a reflective mask blank having pseudo defects significantly excluded. The reflective mask blank comprises a substrate, a reflective layer for reflecting EUV light, formed on the substrate, and an absorber layer for absorbing EUV light, formed on the reflective layer, wherein S&#x3c;1.0 is satisfied, where Sis skewness in a region of 1 &#x3bc;m&#xd7;1 &#x3bc;m on the absorber layer side surface.

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Tokyo, Japan

Hiroshi Hanekawa