Oki Data Corporation

Oki Electric Industry Co., Ltd.

Kabushiki Kaisha Toshiba

Oki Data Communication

Hiroshi Hamano

Masumi Taninaka

Mitsuhiko Ogihara

Yukio Nakamura

Takatoku Shimizu

Masumi Koizumi

Yuichi Yamamoto

Tomohisa Motomura

Masaharu Nobori

Yoshizumi Sato

Yasushi Arai

Hiroyuki Fujiwara

Toshio Sato

Kazuya Ohkawa

Hiroshi Furuya

Shinya Jyumonji

Yoshio Nakano

Yuji Terouchi

Shigeki Ogura

Hiromasa Kanno

Hiroshi Tohyama

Hiroki Yamagishi

Toshiki Furukawa

Kohei Saito

Katsuaki Tanaka

Satoru Sakamoto

Hiroaki Kikuchi

A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.

Composite semiconductor device, print head and image forming apparatus

An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions. The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.

LED array, LED head and image recording apparatus

A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.

Light-emitting-element array

A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two semiconductor blocks, being connected to the diffusion region in one of the two semiconductor blocks and to the electrode in the other one of the two semiconductor blocks. The electrode pad can thus activate both semiconductor blocks, activating one semiconductor block when placed at one potential, and activating the other semiconductor block when placed at another potential. Efficient driving with a comparatively small number of electrode pads thus becomes possible.

Array of semiconductor elements with paired driving scheme

A light emitting semiconductor device comprises an upper cladding layer ( ) consisting of a first upper cladding layer ( ) provided on an active layer ( ) and a second upper cladding layer ( ) provided on the first upper cladding layer ( ) to increase the light emitting efficiency and reduce the defective ratio in formation of a patterned layer. The energy band gap (Eg( )) of the first upper cladding layer ( ) is larger than the energy band gap (Eg( )) of the second upper cladding layer ( ), which is larger than the energy band gap (Eg( )) of the active layer ( ). One of a patterned layer, an dielectric interlayer ( ) has an etched region at a predetermined area thereof so that at least a part of the upper cladding layer ( ) or a second conductive type semiconductor region ( ) is exposed.

Light emitting semiconductor device

An array of light emitting elements, formed as regions of a second conductive type in a semiconductor layer of a first conductive type, includes at least one emission-altering element provided for the purpose of altering the amount of light emitted by an adjacent light-emitting element. The emission-altering element may be a trench, an opaque member, or a non-emitting region of the second conductive type. Light-emitting elements in the interior of the array can be made to emit the same amount of light as the light-emitting elements at the ends of the array by placing one emission-altering element between at least every second pair of mutually adjacent light-emitting elements. If the array is divided into blocks, the emission-altering elements can also provide electrical isolation between the blocks.

Array of light-emitting elements and emission-altering elements

A light emitting diode in accordance with the present invention has a p-n junction which is formed by selectively implanting an impurity from the surface of a semiconductor substrate, and also has an etched groove which is formed in the p-n junction area near the surface of the substrate. In the area where the etched groove is formed, the p-type area and the n-type area are spatially separated in the region of the substrate, therefore the movement of minority carriers does not occur. As a consequence, in the light emitting diode in accordance with the present invention, the movement of minority carriers in the p-n junction interface occurs at a deeper position of the semiconductor substrate. In a deep position of the semiconductor substrate, the recombination rate of minority carriers is high. Therefore if the recombination of minority carriers is increased in a deep position, the emission efficiency of the light emitting diode increases.

Semiconductor optical device

According to the present invention, a plurality of p-type semiconductor layers are formed in a single row and a first layer insulating film having first opening portions and an n-side opening portion is formed on the layers in an n-type semiconductor block . On the first layer insulating film , p-side electrodes to connect to the p-type semiconductor layers at the first opening portions and an n-side electrode (an n-side contact electrode and an n-side pad electrode ) to connect with the n-type semiconductor block at the n-side opening portion are formed. Furthermore, p-side common wirings to connect with specific p-side electrodes are formed via a second layer insulating film . The p-side electrodes and the n-side electrode are formed using the same conductive film material through a single film formation and patterning process. An Au alloy film, for instance, may be used to form the conductive film that is to constitute the p-side electrodes and the n-side electrode

Led array, and led printer head

In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light.

Light-emitting semiconductor device with reduced obstructions to light emission

A light-emitting semiconductor device has a semi-insulating semiconductor surface layer overlying a conductive semiconductor layer of a first conductive type. A diffusion region of a second conductive type extends through the semi-insulating semiconductor surface layer and ends in the conductive semiconductor layer. Positive and negative electrode contacts are provided on the upper surface of the device. Nonradiative recombination near the surface of the device is reduced because there is no pn junction in the semi-insulating semiconductor surface layer, and the device structure is suitable for matrix driving.

Light-emitting semiconductor device with reduced nonradiative recombination

A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.

Light-emitting diode, light-emitting diode array, and method of their fabrication

A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.

LED array

A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed that the energy band gaps of the first to fifth semiconductor layers are respectively Eg1, Eg2, Eg3, Eg4 and Eg5, they satisfy the relation that Eg1&lt;Eg2&lt;Eg3&lt;Eg4 and Eg1&lt;Eg5. The pn fronts formed by p-type domains and the n-type domain of the semiconductor body are individually formed in the first semiconductor layer, the second semiconductor layer and the third semiconductor layer which form a stacked semiconductor layer. The LEDs emit light having wavelengths corresponding to the energy band gaps of the semiconductor layers in which the pn fronts are formed. These LEDs are integrated at intervals of a pitch between the p-type domains or the p-type electrodes.

Light emitting semiconductor device having plural light emitting

A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.

Light-emitting element array and fabrication method with separate

In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.

Growing community of inventors

Tokyo, Japan

Hiroshi Hamano