Applied Materials, Inc.

Nihon Yamamura Glass Co., Ltd.

Hiroshi Hamana

Shankar Venkataraman

Nitin K Ingle

Anchuan Wang

Ching-Mei Hsu

Dmitry Lubomirsky

Randhir P Thakur

Zhijun Chen

Xinglong Chen

Zihui Li

Jiayin Huang

Paul Edward Gee

Jingmei Liang

Sidharth Bhatia

Sasha Joseph Kweskin

Sukwon Hong

Manuel Hernandez

Kadar Sapre

Atsushi Miyagi

Katsuaki Sumimiya

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Processing systems and methods for halide scavenging

A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.

Low temperature gas-phase carbon removal

Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The methods may include forming a layer of dielectric material on the substrate. The dielectric material may form a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches. The methods may include densifying the layer of dielectric material so that the densified dielectric within the two trenches of unequal width exerts a substantially similar stress on the unetched portion of the substrate that separates them.

Methods of reducing substrate dislocation during gapfill processing

Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si&#x2014;O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si&#x2014;C bond and a Si&#x2014;N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si&#x2014;O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

Two silicon-containing precursors for gapfill enhancing dielectric liner

Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

Preferential dielectric gapfill

A synthetic resin cap includes a top wall, a skirt wall, and a tamper evidence band connected to the skirt wall with bridges interposed therebetween. An inner face of the top wall includes an annular inner leg, an annular projection, and an annular outer leg. An intermediate part of the inner leg has a substantially constant transverse thickness in a vertical direction. Inner and outer circumferential faces of the intermediate part have substantially the same curvature of longitudinal section and are arcuate and convex inwardly in a radial direction, and an outer circumferential face of a distal end part of the inner leg has a guide face that guides the container mouth part, and the intermediate part is inclined radially outwardly so that an upper end of the guide face is shifted radially inwardly by 0.1 to 0.6 mm when the inner leg is inserted in the container mouth part.

Synthetic resin cap

A cap includes a cap main body and a gasket, and the gasket includes an inner leg, a bent part, and a flange part. A portion of the gasket connected to an inner circumferential side of the inner leg is positioned lower than a portion of the gasket connected to an outer circumferential side of the inner leg. The top plate of the gasket includes a flange part disposed between the inner leg and the bent part, and the flange part is thinner than a portion of the top plate that is contiguous with the inner circumferential side of the inner leg.

Cap and container for improved sealing

Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

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Hyogo, Japan

Hiroshi Hamana