Nippon Telegraph and Telephone Corporation

Taiyo Yuden Co., Ltd.

Oclaro Japan, Inc.

Lumentum Japan, Inc.

Canon Kabushiki Kaisha

Hodogaya Chemical Co., Ltd.

Tgk Co., Inc.

Kabushiki Kaisha Toshiba

Kawasaki Kisen Kaisha, Ltd.

Hiroshi Hamada

Hideyuki Nosaka

Yukihiro Matsui

Takashi Toyonaka

Teruo Jo

Takashi Tomita

Yutaka Doshida

Shigeo Ishii

Yoshinobu Tonomura

Hajime Yamazaki

Yasuhiro Niikura

Shigehisa Tanaka

Akihito Akutsu

Masaaki Tonegawa

Ryu Washino

Fumihisa Ito

Yukinobu Taniguchi

Go Itami

Shinji Otani

Hiroshi Yamazaki

Hiroyuki Shimizu

Munehiko Nagatani

Tomohiro Harada

Yukihiro Konishi

Yasushi Sakuma

Sumiaki Kishimoto

Hiroaki Kataoka

Takafumi Taniguchi

Takamitsu Watanabe

Kazuhiro Irie

Mitiharu Suzuki

Atsushi Shimizu

Yoshiyuki Watanabe

Takashi Takeda

Haruo Ishizuka

Hiroyuki Fukuyama

Makoto Nagaoka

Keiichi Kobayashi

Michihide Sasada

Takashi Satou

Takuma Ban

Yoshihisa Tadokoro

Shigenori Hayakawa

Naoyuki Matsumoto

Koki Iemura

Koichi Kashima

Kanichi Yoshino

Yoko Asano

Akihiro Shimizu

Yasukazu Tokuhisa

Masato Shishikura

Masataka Yokosawa

Tetsuo Okazaki

Tsutomu Horioka

Ichiro Okui

Shuichi Abe

Masahiro Ebisu

Katuyuki Kanbara

Kiyokazu Takasou

Takashi Satoh

A radio frequency antenna measurement system () of the present invention includes a receiving antenna () that receives a radiated radio wave from an on-chip radio frequency antenna (AUT). The receiving antenna () includes a waveguide (A) in which a connector (B) for outputting a reception signal to the power sensor () is integrally formed at a rear end. Accordingly, in a state where a microscope (MS) necessary for position adjustment of a feed probe () is installed, it is possible to construct a reception system that receives the radiated radio wave from the AUT and measures a radiation characteristic on a stage (), and to measure the radiation characteristic such as a gain and radiation pattern of the AUT with high accuracy.

High-frequency antenna measurement system

Arranged on a surface of a substrate are a patch conductor that radiates an electromagnetic field having been fed, a feed line that feeds the patch conductor with the electromagnetic field having been input, two slits parallel to the feed line on both sides of a connection part of the feed line toward an inner side of the patch conductor, and a ring conductor at a space from the patch conductor with an interposition of a gap to surround an outer periphery of the patch conductor. Accordingly, an electric capacitance can be formed between the patch conductor and the ring conductor, and when achieving impedance matching with the feed line, adjustment can be performed using the size of the ring conductor and the gap.

Circuit integrated antenna

Stub conductors are disposed so as to surround an outer periphery of a patch conductor and be spaced from the patch conductor with a gap positioned between the stub conductors and the patch conductor.

A permittivity measuring method includes measuring a set of phases at sampling frequencies of at least three points in each of a first-half portion and a second-half portion of a phase characteristic of electromagnetic waves that passed through a measurement target, if the mode of the phase changes of both sets of phases belongs to a phase group in which change of the at least three points in the first half and change of at least three points in the second half are both monotonic change, maximal values, or minimal values, calculating the permittivity using the phase slope of the phases in the first-half portion and the phases in the second-half portion, and if the mode of the phase changes does not belong to the phase group, calculating the permittivity by fitting the phases of either the first half or the second half to a quadratic function.

Dielectric constant measurement method, dielectric measurement device and dielectric measurement program

A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.

Variable gain amplifier

A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×10/cm. The high-concentration layers have a carrier concentration of 1×10/cmor more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

Semiconductor light-receiving element

In an embodiment, an edge extraction method includes: emitting, toward an object, an electromagnetic wave polarized only in one direction perpendicular to a propagation direction; receiving a transmitted electromagnetic wave that has been transmitted through the object, using a receiving antenna; calculating an intensity in the propagation direction of the transmitted electromagnetic wave based on an intensity of the transmitted electromagnetic wave received by the receiving antenna; and obtaining a spatial distribution of the intensity in the propagation direction of the transmitted electromagnetic wave.

Edge extraction method and edge extraction device

A plurality of waveguide structures are loaded on a top surface opposed to a bottom surface of a metal case, on which a high-frequency circuit is mounted, a height, a width, and a length of each of the plurality of waveguide structures have dimensions corresponding to a quarter-wave of a cutoff frequency indicating a frequency band of a target electromagnetic wave to be blocked, and a width and a length of each of the plurality of waveguide structures have dimensions that allow only a high-frequency wave of a mode to propagate in the frequency band.

High-frequency module

A multilayer piezoelectric element includes a ceramic body formed by a piezoelectric ceramic, and having first and second end face facing a longitudinal direction, first and second principal faces facing a thickness direction perpendicular to the longitudinal direction. A pair of external electrodes cover the first and second end faces, extend from the first and second end faces onto the first principal face via ridge parts connecting the end faces with the principal faces, and project in the thickness direction on the first principal face. Multiple internal electrodes are stacked inside the ceramic body and are connected alternately to the pair of external electrodes along the thickness direction. A surface electrode is provided on at least one of the first and second principal faces, and connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected.

Multilayer piezoelectric element, piezoelectric vibration apparatus, and electronic device

A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Semiconductor light-receiving element and manufacturing method of semiconductor light-receiving element

Provided is a vibration panel including an inner member, a first outer member, a second outer member, a piezoelectric actuator, an actuator bonding layer, and a filler. The inner member includes first and second main surfaces. The first outer member includes third and fourth main surfaces, the third main surface including a first region and a second region. The second outer member includes fifth and sixth main surfaces, the fifth main surface including a third region and a fourth region. The piezoelectric actuator causes vibration. The actuator bonding layer is disposed between the piezoelectric actuator and the second region and bonds the piezoelectric actuator to the second region. The filler fills a space between the second region and the fourth region and covers the piezoelectric actuator.

Vibration panel and electronic apparatus

A vibration generating deviceincludes: a diaphragm; and a first piezoelectric actuatorand a second piezoelectric actuatorattached on an upper surfaceand a lower surfaceof the diaphragm, respectively, so as to sandwich the diaphragm 11 therebetween in a vicinity of an end surface of the diaphragm, wherein, in a top view of the upper surfaceof the diaphragm, the first piezoelectric actuatoris disposed at a position shifted with respect to the second piezoelectric actuator

Vibration generating device and electronic equipment

A high-frequency module includes: a chassis which is made of a conductor and which has an internal space; a high-frequency circuit board which is housed in the internal space of the chassis; and a resistive element provided between an inner wall that opposes the high-frequency circuit board among inner walls of the chassis which define the internal space and the high-frequency circuit board.

A vibration generating deviceincludes: a housingin a rectangular shape as viewed in a first direction, the housingcomprising: a first support portionextending along a first side in a second direction perpendicular to the first direction and; a second support portionextending along a second side opposite to the first side in the second direction; a panelsupported by the first support portion and the second support portion; and a piezoelectric elementattached to the panel in such a manner as to be shifted in the second direction toward the first side with respect to a central portion of the panel, wherein a width in the second direction of a portion of the panel supported by the first support portion is larger than a width in the second direction of a portion of the panel supported by the second support portion.

Vibration generating device

A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1&#xd7;10/cm. The high-concentration layers have a carrier concentration of 1&#xd7;10/cmor more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

Growing community of inventors

Tokyo, Japan

Hiroshi Hamada