Fujikoki Corporation

Shin-etsu Film Co., Ltd

Sunric Co., Ltd

Hiroshi Hagimoto

Hideaki Takahashi

Yasuhiro Kato

Tatsuhiko Hongu

Kenjiro Nakamura

Kento Yamada

Yusuke Ishizuka

An electric valve control device inputs pulses to a stepping motor to rotate a rotor in a second direction; inputs pulses to the stepping motor to rotate the rotor in a first direction when the electric valve is in a second-direction-rotation restricted state; obtains the number of pulses (an input number (Xi)) input to the stepping motor from the second-direction-rotation restricted state to a first-direction-rotation restricted state when the electric valve is in the first-direction-rotation restricted state while the rotor rotates in the first direction; determines that the rotor can rotate normally when the input number (Xi) is greater than or equal to a design number (Xd) and is smaller than or equal to an upper limit number (Xu); and determines that the rotor cannot rotate normally when the input number (Xi) is smaller than the design number (Xd) or is greater than the upper limit number (Xu).

Electric valve control device, electric valve device, and method for controlling electric valve

An electric valve control device inputs a pulse to a stepping motor to rotate a rotor in a first direction. The electric valve control device obtains a voltage generated in a stator by rotation of the rotor. The electric valve control device determines whether an electric valve is in a first-rotation restricted state where the rotation of the rotor in the first direction is restricted, based on a degree of difference between a waveform of the voltage and a reference waveform of the voltage.

Controller for cooling apparatus

Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200&#xb0; C. or higher. It is preferable that the alloy member is of an alloy of Re&#x2014;W, W&#x2014;Ta, Zr&#x2014;Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.5 mm, a plate member having a thickness of at least 1 mm or a prismatic member, or a tubular member having a diameter of at least 1 mm, wall thickness of at least 0.2 mm with an inner diameter not exceeding 5 mm, that the plate member, wire member, prismatic member or tubular member has a tapered form and further that the tubular member is a tapered duplex tube.

Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method

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Tokyo, Japan

Hiroshi Hagimoto