Kobe Steel, Ltd.

Kobelco Research Institute, Inc.

Hiroshi Gotou

Aya Hino

Junichi Nakai

Nobuyuki Kawakami

Mototaka Ochi

Katsufumi Tomihisa

Hiroyuki Okuno

Toshihiro Kugimiya

Katsutoshi Takagi

Takashi Onishi

Masaya Ehira

Yoichiro Yoneda

Yuichi Taketomi

The invention relates to an Al&#x2014;Ni&#x2014;La system Al-based alloy sputtering target where a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al&#x2014;La system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;La system intermetallic compound is 70% or more in terms of an area fraction.

Al-Ni-La system Al-based alloy sputtering target

A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.

Thin film transistor substrate including source-drain electrodes formed from a nitrogen-containing layer or an oxygen/nitrogen-containing layer

The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.

Al alloy film for display device, display device, and sputtering target

This invention is intended to provide a layered structure in which Al alloy is directly connected to transparent oxide conducting layer without increasing electrical contact resistance between the two, with wiring resistance held low and galvanic corrosion being less likely to occur in developing solution or other electrolyte fluids, and the manufacturing method of such layered structure. The manufacturing method intended to provide such layered structure composed of the Al alloy and the transparent oxide conducting layer directly connected to each other, includes a first process to form the above transparent oxide conducting layer on a substrate, a second process to form, on the transparent oxide conducting layer, an Al alloy layer containing alloy components having less ionization tendency than aluminum, and a third process to heat the above Al alloy layer at a temperature equal to or higher than the temperature at which interchemical compound between aluminum and the above alloy components can be separated out.

Layered structure and its manufacturing method

A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.

Display device

An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring filmcomposing a TFT elementfor a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring filmis layered on a glass substrateand further a transparent conductive filmis layered thereon while an insulating filmis interposed in between.

Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film

Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.

Growing community of inventors

Kobe, Japan

Hiroshi Gotou