Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Other

Hiroshi Gotoh

Toshihiro Kugimiya

Katsufumi Tomihisa

Junichi Nakai

Nobuyuki Kawakami

Takayuki Hirano

Aya Hino

Kenichi Inoue

Eiji Iwamura

Susumu Takeuchi

Akashi Yamaguchi

Yasuji Yoneda

Tsutomu Mirimoto

A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.

Display device and sputtering target for producing the same

A thin-film transistor substrate in which an aluminum alloy film composing a source/drain wiring is directly connected with a transparent electrode. The thin-film transistor substrate includes a gate wiring, and source wiring and drain wiring, the gate wiring and the source and drain wiring being arranged orthogonally to each other. The single-layer aluminum alloy film composing the gate wiring and the single-layer aluminum alloy film composing the source wiring and the drain wiring are the same in composition. Furthermore, display devices can be mounted with the above thin-film transistor substrates.

Thin film transistor substrate and display device

In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.

Electronic device, method of manufacture of the same, and sputtering target

Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.

In a thin-film transistor substrate including a substrate, a thin-film transistor semiconductor layer, a source/drain electrode, and a transparent pixel electrode, the source/drain electrode includes a thin film of an aluminum alloy containing 0.1 to 6 atomic percent of nickel as an alloy element, and the aluminum alloy thin film is directly connected to the thin-film transistor semiconductor layer.

Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices

A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.

Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices

A display device and a method for production thereof. The display device comprises a substrate, thin film transistors and a transparent conductive film which are formed on the substrate, and an aluminum alloy film which electrically connects the thin film transistors to the transparent conductive film, such that there exists an oxide film of said aluminum alloy at the interface between said aluminum alloy film and said transparent conductive film, said oxide film having a thickness of 1 to 10 nm and containing oxygen in an amount no more than 44 atom %. The display device has the aluminum alloy film and the transparent conducive film in direct contact with each other, obviating the necessity of barrier metal between them.

Display device and method for production thereof

A display device includes an insulating substrate, a thin-film transistor arranged on the insulating substrate, a pixel electrode including a transparent electrode, and an aluminum alloy film as a connection wiring section for electrically connecting between the thin-film transistor and the pixel electrode. The aluminum alloy film is a multilayer aluminum alloy film including an aluminum alloy layer containing no nitrogen, and another aluminum alloy layer being arranged on the first layer and containing nitrogen. The nitrogen-containing layer ensures corrosion resistance against an alkaline solution. The nitrogen-containing aluminum alloy layer has been removed at least in a connection area with the pixel electrode so as to allow the pixel electrode to be directly connected to the first aluminum alloy layer.

Display device

In an electric-connection testing device of the present invention, a base and a rigid body, to which a substrate provided with a plurality of contacts are secured, are integrated and sandwich a leaf spring. The leaf spring has a spring structure with two or more independent elastic degrees of freedom. Such a small, simple, and adjustment-free structure can uniformize a pressing force applied from the contacts to electrodes of an object to be tested.

Electric-connection testing device

There is provided an electric connection-inspection device which does not impair a freedom of selection of using materials from a viewpoint of restriction in terms of product's function with the aptitude of electric features of electric resistance and physical properties of internal stress, and restriction in terms of manufacture as to the appropriation or not of employment of a plating method, and which has a fine construction provided with the excellent durability that an electrode element is hard to adhere and coagulate. An electric connection-inspection device for coming into electrically contact with an object to be inspected to input and output a signal, comprising a plurality of contact terminals, a coating of a second layer having the Young's modulus higher than that of a wiring base-material layer and whose specific resistance is not more than 1&times;10 &OHgr;cm being formed on the surface of the wiring base-material layer positioned at the extreme end of the contact terminal, and a coating of a third layer having a low coagulating property being formed on the surface of the second layer.

Growing community of inventors

Kobe, Japan

Hiroshi Gotoh