Ngk Insulators, Inc.

Nkg Insulators, Ltd.

Ngk Ceramic Device Co., Ltd.

Hiroshi Furukubo

Tsuneaki Ohashi

Hirotake Yamada

Hiromichi Kobayashi

Makoto Murai

Yasufumi Aihara

Toshio Oda

Yoshinori Mizuno

Naoto Kouketsu

An automatic mask peeling apparatusincludes: a brushing apparatusfor removing solidified plugging slurry attached to the maskan air injection apparatusfor injecting, after the removal of the solidified plugging slurry, air from the opposite end face-side of the one end face to raise a folded surplus part of the mask from the one end face; a mask peeling apparatusfor holding the part raised by the air injection apparatusto peel the maskand a carrying apparatusfor carrying a masked plugging honeycomb structurefrom the brushing apparatusto the mask peeling apparatusThis apparatus can be used to peel a maskwhich has been used for plugging only the predetermined cells of a masked plugging honeycomb structurethe maskhaving an area larger than the area of the end face of the structure.

Automatic mask peeling apparatus

A ceramic sintered body has a dense portion and a porous portion. The dense portion is formed from sintered ceramic fine particles, and the porous portion is formed from sintered ceramic coarse particles. The fine particles and coarse particles are simultaneously subjected to pressure sintering to form the dense portion and porous portion.

Ceramic sintered bodies and a method of producing the same

A film structure including a silicon carbide film formed on a surface of an aluminum nitride substrate. The substrate has a first base plane, a second base plane positioned downward with respect to the first base plane and a step plane arranged in an intersecting direction between the first base plane and the second base plane. One or more chamfered planes are arranged between the first base plane and the step plane so as to form a plurality of corner portions each having an angle larger than 130&deg;. Alternatively, at least one round portion having a curvature radium of larger than 0.05 mm is arranged between the first base plane and the step plane.

Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film

A silicon carbide body includes polycrystals of silicon carbide, and has a purity of silicon carbide of not less than 99.9999 wt %, a relative density of not less than 99% and a ratio of silicon of not less than 70.12 wt %.

Silicon carbide body

A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000&deg; C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.

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Ichinomiya, Japan

Hiroshi Furukubo