Canon Kabushiki Kaisha

Tokyo Institute of Technology

National Institute of Advanced Industrial Science and Technology

University of Yamanashi

Tdk Corporation

Kyoto University

Tokyo University of Science Educational Foundation Administrative Organization

Horiba, Ltd.

Sophia University

Sophia School Corporation

Other

Fujifilm Corporation

Japan Science and Technology Agency

The Circle for the Promotion of Science and Engineering

Funakubo, Hiroshi

Hiroshi Funakubo

Kenichi Takeda

Toshihiro Ifuku

Tetsuro Fukui

Takanori Matsuda

Katsumi Aoki

Takashi Iijima

Shintaro Yokoyama

Kaoru Miura

Makoto Kubota

Jumpei Hayashi

Nobuhiro Kumada

Satoshi Wada

Hiroshi Uchida

Masaki Azuma

Soichiro Okamura

Takao Shimizu

Takayuki Watanabe

Hisato Yabuta

Takanori Mimura

Nataliya Nabatova-Gabain

Tatsuo Furuta

Hideaki Takahashi

Yukio Sakashita

Shintaro Yasui

Hiroshi Nakaki

Shoji Okamoto

Minoru Kurosawa

Satoshi Okamoto

Bong-Yeon Lee

Yoshiko Nakamura

Olga Alexandrovna Smirnova

Keisuke Yazawa

Jun-ichi Nagata

Ken Nishida

Yong Kwan Kim

Rikyu Ikariyama

Yoshihisa Honda

Asuka Terai

Yusuke Sato

Kenji Takashima

Risako Ueno

Satoshi Sugahara

Morito Akiyama

Zuyi Zhang

Atsushi Hori

Hiroshi Yamada

Shuichiro Yamamoto

Tomoaki Yamada

Yusuke Shuto

Koji Tominaga

Kuniyuki Kakushima

Masato Uehara

Wakiko Sato

Tsukasa Satake

Keisuke Yamato

Ichiro Fujiwara

Mirai Ishida

Shun-ichiro Ohmi

Joel Molina Reyes

Reijiro Shimura

Miyu Hasegawa

Shinnosuke Yasuoka

Keisuke Ishihama

Takahiro Oikawa

Mutsuo Ishikawa

Hiro Einishi

Takahisa Shiraishi

Yu-ki Tashiro

Takashi Katoda

Osami Sakata

Goji Asano

Jyunichi Nagata

Hirofumi Matsuda

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.

Method for producing ferroelectric film, ferroelectric film, and usage thereof

The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance, which can be mixed with advanced CMOS logic. The non-volatile storage element has at least a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide between both conductive layers, with a buffer layer having oxygen ion conductivity situated between the ferroelectric layer and the first conductive layer and/or second conductive layer. An interface layer composed of a single-layer film or a multilayer film may be also provided between the first conductive layer and the ferroelectric layer, the interface layer as a whole having higher dielectric constant than silicon oxide, and when the buffer layer is present between the first conductive layer and the ferroelectric layer, the interface layer is situated between the first conductive layer and the buffer layer. The non-volatile storage device comprises at least a memory cell array comprising low-power-consumption ferroelectric memory elements formed in a two-dimensional or three-dimensional configuration, and a control circuit. The ferroelectric layer is scalable to 10 nm or smaller and is fabricated at a low temperature of ≤400° C., and is subjected to low temperature thermal annealing treatment at ≤400° C. after the buffer layer has been formed, to provide high reliability.

Non-volatile ferroelectric storage element and devices comprising them

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same. There are provided a ferroelectric thin film represented by a chemical formula M1M2N, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film

A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.

Transistor using piezoresistor as channel, and electronic circuit

Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1).A(ZnTi)MO&#x2003;&#x2003;(1)wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4&#x2266;x&#x2266;0.6; and y represents a numerical value satisfying 0.1&#x2266;y&#x2266;0.9.

Metal oxide

Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):A(ZnTi)(MgTi)MO&#x2003;&#x2003;General formula (1)where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9&#x2266;x&#x2266;1.25, 0.4&#x2266;j&#x2266;0.6, 0.4&#x2266;k&#x2266;0.6, 0.09&#x2266;l&#x2266;0.49, 0.19&#x2266;m&#x2266;0.64, 0.13&#x2266;n&#x2266;0.48, and l+m+n=1 are satisfied.

Piezoelectric material and devices using the same

The piezoelectric element includes, on a substrate: a piezoelectric film; and a pair of electrodes provided in contact with the piezoelectric film; in which the piezoelectric film contains a perovskite-type metal oxide represented by the general formula (1) as a main component:A(ZnTi)(MgTi)MO&#x2003;&#x2003;General Formula (1)wherein the perovskite-type metal oxide is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction, of the pair of electrodes, a lower electrode provided on the substrate side is a multilayer electrode including at least a first electrode layer in contact with the substrate and a second electrode layer in contact with the piezoelectric film, and the second electrode layer is a perovskite-type metal oxide electrode which is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction.

Piezoelectric element, liquid discharge head and liquid discharge apparatus

Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1):A(ZnTi)MO&#x2003;&#x2003;(1)where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4&#x2266;x&#x2266;0.6; and y represents a numerical value of 0.17&#x2266;y&#x2266;0.60.

Piezoelectric material

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 &#x3bc;m and includes a perovskite oxide represented by a general formula (P) given below:(K,A,B)(Nb,C,D)O&#x2003;&#x2003;(P),where: 0&#x3c;w&#x3c;1.0, 0&#x2266;x&#x2266;0.2, 0&#x2266;y&#x3c;1.0, 0&#x2266;z&#x2266;0.2, 0&#x3c;w+x&#x3c;1.0, A is an A-site element having an ionic valence ofother than K, B is an A-site element, C is a B-site element having an ionic valence of, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

Perovskite oxide film and ferroelectric film using the same, ferroelectric device, and method for manufacturing perovskite oxide film

Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by ABOand A'B&#x2032;Oare combined to form a morphotropic phase boundary has good piezoelectric property. The ABOis b(BaBiNbO)+(1&#x2212;b)(BaAgNbO) (0&#x2266;b&#x2266;1 and 0&#x3c;&#x3b1;&#x2266;0.4), and the A&#x2032;B&#x2032;Ois c(SrNbO)+d(CaNbO)+e(BaNbO) (0&#x2266;c&#x2266;0.8, 0&#x2266;d&#x2266;0.4, 0.1&#x2266;e&#x2266;0.9, and c+d+e=1).

The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)Oand A(2)B(2)Odifferent from each other in crystalline phase, the oxide being represented by the following general formula (1):X{A(1)B(1)O}&#x2212;(1&#x2212;X){A(2)B(2)O}&#x2003;&#x2003;(1)wherein 'A(1)' and 'A(2)' are each an element including an alkali earth metal and may be the same or different from each other; &#x201c;B(1)&#x201d; and &#x201c;B(2)&#x201d; each include two or more metal elements, and either one of &#x201c;B(1)&#x201d; and &#x201c;B(2)&#x201d; contains Cu in a content of 3 atm % or more; and &#x201c;X&#x201d; satisfies the relation 0&#x3c;X&#x3c;1.

There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiOlayer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiOlayer by use of a metal target represented by the following composition formula:yA(1&#x2212;y)B&#x2003;&#x2003;(1),in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula:xAO&#x2212;(1&#x2212;x)BO&#x2003;&#x2003;(2),in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head

A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of &#x3c;100&#x3e;.

Perovskite type oxide material, piezoelectric element, liquid discharge head and liquid discharge apparatus using the same, and method of producing perovskite type oxide material

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Yokohama, Japan

Hiroshi Funakubo