Hitachi, Ltd.

Hitachi Medical Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hitachi Chemical Company, Ltd.

Hiroshi Fukuda

Tsukasa Fujimori

Yuko Hanaoka

Takashi Azuma

Heewon Jeong

Hideaki Tanaka

Toshiyuki Mine

Hiroki Tanaka

Shinichiro Umemura

Shuntaro Machida

Tatsuya Nagata

Masayuki Kurita

Daisuke Ryuzaki

Noriaki Satoh

Masashi Murai

David Williams

Susumu Ogawa

One inertial sensor detects an acceleration in a driving direction as well as an angular rate about one axis and an acceleration in a detecting direction at the same time. A driving-direction acceleration detecting unit is provided to members vibrating in mass members on the left and right via an elastic body. In this manner, when an acceleration is applied in the driving direction, the mass members on the left and right normally vibrated with a same amplitude and in opposite phases have displacement amounts in a same phase, and the driving-direction acceleration detecting unit detects the displacement amounts in the same phase as a capacitance change, thereby detecting the acceleration in the driving direction.

Inertial sensor

An object of the present invention is to enhance the reliability of an MEMS sensor formed on a semiconductor integrated circuit device. To achieve this object, a semiconductor device of the present invention comprises: a semiconductor integrated circuit device; a lower passivation film of silicon nitride, etc. . . . formed on the semiconductor integrated circuit device and having high moisture resistance and high chemical resistance; a MEMS portion formed on the lower passivation film and including a cavity; and an upper passivation filmformed on the top surface of the MEMS portion such that the MEMS portion is hermetically sealed by the upper and lower passivation films.

Semiconductor device carrying micro electro mechanical system

An ultrasonic transducer () includes a substrate () having a first electrode therein or on a surface thereof and a diaphragm () having a second electrode therein or on a surface thereof, with a cavity () therebetween. Further, at least one beam () is provided on a surface or inside of the diaphragm () or the second electrode.

Ultrasonic transducer, ultrasonic probe, and ultrasonic imaging device

The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer () being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor) is provided to control charge in an electro-acoustic transducer (). A charge monitoring section () monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller () by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter ().

Ultrasonographic device

Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.

Organic siloxane film, semiconductor device using the same, flat panel display device, and raw material liquid

The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition Tis selected optionally with reference the heat treatment temperature Tand the pseudo-crystallization temperature T. T, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.

Controlling stress in MEMS structures

A weight of an inertial sensor if formed from a plurality of divided weights, and the divided weights are connected to each other by elastically deformable beams. A movable range and a mass of each of the divided weights and a rigidity of each of the beams are adjusted and a plurality of deformation modes having different sensitivity ranges with respect to the acceleration are used in combination. By this means, it is possible to improve a detecting sensitivity of an acceleration and widen an acceleration response range.

Inertial sensor and manufacturing method of the same

Embodiments of the present invention help to improve the cost, mountability, and reliability of a magnetic disk drive that regulates a fly height of a magnetic head slider correspondingly to the operating altitude of the drive by using an air pressure sensor and a heater. According to one embodiment, a preamplifier is a semiconductor chip formed by three-dimensionally laminating thin film circuits on a bulk silicon wafer. An air pressure sensor is integrally formed on the semiconductor chip through a semiconductor process. The air pressure sensor is configured to include an isolating cavity, a diaphragm that deflecting in response to a change in a pressure difference between the isolating cavity and the outside, and lower and upper electrodes and for detecting variation in electrostatic capacitance. The preamplifier including the air pressure sensor integrally formed therein is attached to a flexible printed cable (FPC) to oppose the FPC. A through-hole is provided in a portion opposite the air pressure sensor of the FPC to introduce air pressure in an operating environment into a diaphragm of the air pressure sensor.

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London, United Kingdom

Hiroshi Fukuda