Matsushita Electric Works, Ltd.

Panasonic Corporation

Panasonic Electric Works Co., Ltd.

Hiroshi Fukshima

Kazuyuki Yamae

Masaharu Yasuda

Yuji Suzuki

Tomoya Iwahashi

Jun Ogihara

Akihiko Murai

Hiroshi Noge

Kiyohiko Kawano

Hiroshi Harada

Naomasa Oka

Kenichiro Tanaka

Hidenori Kamei

Tsutomu Ichihara

Takuya Komoda

Masao Kubo

Takashi Hatai

Shinji Matsui

Hitomichi Takano

Masahiko Suzumura

Takaaki Yoshihara

Katsumi Yoshino

Akira Inoue

Yasufumi Masaki

Syuusaku Maeda

Mikio Masui

Hiroaki Kitamura

Ken'ichiro Tanaka

Chousei Hamada

Koshi Akedo

Sibei Xiong

Inoue Akira

Masui Mikio

Kubo Masao

A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of &#xbe; of the emission wavelength by the refractive index of the transparent layer.

Semiconductor light emitting element and illuminating apparatus using the same

A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

Method of manufacturing semiconductor light emitting element

A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting elementin accordance with the present invention includes: a light-emitting layerhaving a laminated structure in which a p-type GaN filmand an n-type GaN filmare included; a conductive hexagonal pyramidal baseformed from ZnO and mounting with the light-emitting layer on a bottom surface; an anodejoined to the bottom surfaceof the baseat a position apart from the light-emitting layer; and a cathodemounted on the light-emitting layer. In the semiconductor light-emitting element, the p-type GaN filmis joined to the bottom surfaceof the base, and the cathodeis joined to an N-polar plane of the n-type GaN film, said N-polar plane of the n-type GaN filmbeing an opposite side to the p-type GaN film. In the semiconductor light-emitting element, the N-polar plane of the n-type GaN filmhas a fine peak-valley structureoutside a portion joined to the cathode

Semiconductor light-emitting element, method of manufacturing same, and light-emitting device

A light-emitting device of the present invention includes: a semiconductor layerincluding a light-emitting layer; a recess/projection portionincluding recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer, the recess/projection portionbeing formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.

Light-emitting device

A production method for producing a light-emitting devicein which a light-emitting layer at least comprised of a n-type substrate bearing layerand a p-type substrate bearing layeris layered on a transparent crystal substrateis provided with a step of forming a transfer layeron at least a part of the transparent crystal substrateor the light-emitting layer, which transfer layeris softened or set upon supplying an energy thereto; a step of pressing a moldformed with a minute unevenness structureagainst the transfer layerto transfer the minute unevenness structureto an outer surface of the transfer layer, and a step of forming a minute unevenness structurefor preventing multiple reflection based on the minute unevenness structuretransferred to the transfer layer

Method for producing a light emitting device

An electrostatically driven latchable actuator system has an actuator and a pair of side effectors on opposite ends of the actuator. The actuator is resiliently supported to a substrate and is movable along a linear axis between two operative positions as being electrically attracted to one of the side effectors. A latch mechanism is provided to mechanically latch the actuator at either of the operative positions. The side effectors are movably towards and away from the actuator along the linear axis between a normal position and a shifted position close to the actuator. Both of the side effectors are also resiliently supported to the substrate to be movable towards the actuator by being electrostatically attracted thereto and away from the actuator by resiliency. The moving side effector is interlocked to the latch mechanism through a mechanical link so as to unlatch the actuator in response to one of the side effectors being attracted to the actuator, and allow the actuator to move from one operative position to the other operative position to be again latched thereat.

Electrostatically driven latchable actuator system

A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess. Finally, the bottom layer of the upper substrate is removed to release the movable components from the bottom layer for floating the movable components above the recess and allowing them to move relative to the lower substrate, while keeping the fixed components fixed to the top of the lower substrate.

Process for fabricating a micro-electro-mechanical system with movable components

An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of padsfor energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Infrared radiation element and gas sensor using it

A compact, low-consumption optical device using a photonic crystal is provided. This optical device comprises a photonic crystal designed to have a shape of a dispersion surface with a strong direction dependence at a frequency, and light input means for allowing a light beam having a wavelength determined by said frequency to be incident on said photonic crystal at an incident angle determined from a region with a large change of direction dependence in the shape of the dispersion surface according to the law of conservation of momentum. In case of adopting this incident angle, the light beam can be deflected by the photonic crystal at an angle that is from several ten times to several hundred times larger than of the deflection angle obtained by use of a conventional optical material.

Optical device using photonic crystal and light beam deflection method using the same

A compact light-beam deflecting device with a photonic crystal is provided, which has the capability of deflecting a light beam incident on the photonic crystal by a controlled angle to output a transmitted light beam having a desired direction from the photonic crystal. This light-beam deflecting device comprises the photonic crystal designed to have a photonic band gap wavelength that is different from a wavelength of a light beam to be incident on the photonic crystal, and a deflection controller for applying an amount of energy to the photonic crystal to deflect the light beam incident on a side of the photonic crystal, and to provide a transmitted light beam, which forms the desired angle with respect to the light beam, from the other side of the photonic crystal.

Light-beam deflecting device with photonic crystal, optical switch using the same, and light-beam deflecting method

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Kadoma, Japan

Hiroshi Fukshima