Kabushiki Kaisha Toshiba

Kioxia Corporation

Permelec Electrode Ltd.

Tokyo Keiso Co., Ltd.

Hiroshi Fujita

Naoya Hayamizu

Naoaki Sakurai

Akiko Saito

Osamu Yamazaki

Katsuhiro Sato

Masaki Narita

Yukimasa Yoshida

Yoshinori Kitamura

Isao Matsui

Satoshi Nakaoka

Tatsuhiko Koide

Katsuaki Aoki

Toshimitsu Omine

Takahiko Wakatsuki

Takashi O

Toshihide Hayashi

Yukinobu Nishibe

Takayuki Shimamune

Masashi Tanaka

Yoshinori Nishiki

Osamu Torii

Yasushi Watanabe

Hideaki Hirabayashi

Shigeru Kinoshita

Tadashi Sekiguchi

Naruhiko Kaji

Tatsuya Zettsu

Masashi Honda

Tomohiko Sugita

Hisashi Nishigaki

Hakuba Kitagawa

Koichiro Kawano

Yuji Hashimoto

Kuniaki Yamada

Izumi Watanabe

Ryota Yoshizawa

Shusaku Matsumoto

Masahiro Hayashi

Keiichiro Senda

Megumi Yoshinaga

Seiichi Anzai

Shinichiro Manabe

Tsutomu Makino

An information processing apparatus has an objective variable acquirer configured to acquire a multi-dimensional objective variable, an objective variable dimension compressor configured to compress the number of dimensions of the objective variable, an explanatory variable acquirer configured to acquire an explanatory variable, and an influence degree calculator configured to set at least one of a basis characterizing the objective variable and a coefficient weighting the basis as a new objective variable and calculate an influence degree on the new objective variable by using the explanatory variable.

Information processing apparatus, information processing method, and recording medium

According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.

Chemical solution, etching method, and method for manufacturing semiconductor device

According to one embodiment, a substrate processing apparatus includes a batch type cleaning unit, a holding unit, and a single-substrate type drying unit. The batch type cleaning unit simultaneously cleans a plurality of substrates in a batch process with a first liquid. The holding unit receives the cleaned substrates while still wet and then keeps a first surface of each of the substrates wet with the first liquid. The single-substrate type drying unit is configured to receive the substrates one by one from the holding unit and then dry off the substrates one by one.

Substrate processing apparatus, substrate processing method and a semiconductor device manufacturing method

A substrate treatment apparatus according to an embodiment includes: a tank configured to store a liquid chemical with which a plurality of substrates are treated; a piping having an ejection port that ejects the liquid chemical or bubbles into the tank; a plurality of rods that support the plurality of substrates in the tank; and a converter that is provided in the plurality of rods or the tank and that converts vibration applied to each substrate by the liquid chemical or the bubbles ejected from the piping into rotation in one direction around a center of the substrate as a rotational axis.

Substrate treatment apparatus and manufacturing method of semiconductor device

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A substrate processing device according to the present embodiment includes a processing tank configured to be capable of accumulating a liquid. A conveyer can array a plurality of semiconductor substrates in such a manner that front surfaces of the semiconductor substrates face a substantially horizontal direction, and transport the semiconductor substrates into the processing tank. A plurality of liquid suppliers can supply the liquid toward an inside of the processing tank from a lower portion of the processing tank. A plurality of current plates are arranged on at least either one end side or the other end side of an array of the semiconductor substrates. The current plates are provided in a first gap region above the semiconductor substrates in gaps between the conveyer and a sidewall of the processing tank on both sides of the conveyer as viewed from an array direction of the semiconductor substrates.

Substrate processing device

A processing apparatus includes: a processing chamber configured to contain a workpiece; a first nozzle provided in the processing chamber, the first nozzle discharging vapor onto the workpiece; a wall enclosing the processing chamber; a fluid channel provided inside the wall; a fluid inlet; and a fluid outlet. The fluid inlet is provided in communication with the fluid channel. The fluid outlet is provided in communication with the fluid channel, where a fluid flows into the fluid inlet, passes through the fluid channel, and flows out of the fluid outlet. A processing method for processing a workpiece moving in a processing chamber, the processing method includes: discharging a vapor from a first nozzle toward the workpiece while flowing a fluid through a fluid channel which is provided inside a wall, the wall enclosing the processing chamber.

Processing apparatus and method

A processing apparatus includes: a tank configured to store water; vapor generating unit configured to turn the water supplied from the tank into vapor; a processing chamber in which vapor supplied from the vapor generating unit is used to remove residues from a workpiece; cooling unit; and filtering unit. The cooling unit cools waste liquid ejected from the processing chamber. The filtering unit is provided between the cooling unit and the tank, and the filtering unit filters the waste liquid cooled in the cooling unit. A processing method includes: supplying vapor into a processing chamber; removing residues from a workpiece using the vapor; cooling waste liquid containing the removed residues to precipitate the residues as solids; and filtering the waste liquid containing the precipitates.

Apparatus and method for photoresist removal processing

An ultrasonic cleaning apparatus which cleans a material at a surface by supplying an ultrasonic wave from an ultrasonic wave application head to a cleaning liquid on the surface, and cleans the surface, wherein the ultrasonic wave application head has an ultrasonic wave transmission member which is provided opposite the surface, and has a curved portion on a first plane placed close to the surface, an ultrasonic transducer which is provided on a second plane placed opposite the first plane of the ultrasonic wave transmission member, and generates and applies an ultrasonic wave to a cleaning liquid on the surface through the ultrasonic wave transmission member, and a preventive portion which is provided in the ultrasonic wave transmission member, and prevents the ultrasonic wave applied to the cleaning liquid and reflected on the surface from entering the ultrasonic transducer through the ultrasonic wave transmission member.

Ultrasonic cleaning apparatus

An ultrasonic-wave washing unit comprising an ultrasonic-wave vibrating plate to which an ultrasonic-wave vibrator is fixed by adhesive bonding, an ultrasonic-wave transmission plate opposed to the vibrating plate, a liquid supply means which supplies a liquid to a space defined between the vibrating plate and the transmission plate, and a liquid discharge means for discharging the liquid from the space.

Ultrasonic-wave washing unit, ultrasonic-wave washing apparatus, ultrasonic-wave washing method, method of manufacturing a semiconductor device, and method of manufacturing a liquid crystal display

There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Semiconductor device manufacturing method

A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system

A flow rate control valve comprises a driver in which a rotary shaft is rotated to adjust the opening degree of a valve body. The driver is an ultrasonic motor comprising a stator having piezoelectric elements mounted thereto and a rotor mounted to the rotary shaft and resiliently pressed against the stator.

Flow rate control valve and flow rate control system

Provided is a cleaning method for effectively removing particles on the surface of an object to be cleaned. This cleaning method includes dissolving oxygen into deaerated pure water to prepare a cleaning fluid, and cleaning an object to be cleaned by bringing the object into contact with the cleaning fluid to which ultrasonic vibration is being applied.

Cleaning method

An electrolytic cell for producing acidic water and alkaline water is disclosed. High-purity acidic water and high-purity alkaline water can be produced in a well balanced proportion from ultrapure water which is supplied in the minimum amount necessary for producing the desired acidic and alkaline waters using the minimum amount of electricity. The electrolytic cell includes an electrolytic acidic-water production unit 3 comprising an anode chamber 6 and an auxiliary cathode chamber 7 separated therefrom by a first ion-exchange membrane 5, and an electrolytic alkaline-water production unit 4 comprising a cathode chamber 10 and an auxiliary anode chamber 9 separated therefrom by a second ion-exchange membrane 8. Separately controllable power supplies are also provided for supplying power to each of the two units. The supply amount of pure water and the amount of electricity used can be fixed according to the desired amounts of acidic and alkaline waters. Thus, wasteful use of ultrapure water and electric power can be avoided.

Electrolytic cell for producing acidic water and alkaline water

Growing community of inventors

Yokohama, Japan

Hiroshi Fujita