Semiconductor Energy Laboratory Co., Ltd.

Hiroshi Fujiki

Shinya Sasagawa

Shunpei Yamazaki

Naoto Yamade

Tomoaki Moriwaka

Toshihiko Takeuchi

Shunsuke Kimura

Hideomi Suzawa

Hiromichi Godo

Yasumasa Yamane

Naoki Okuno

Kosei Nei

Yoshinori Ieda

Hiroaki Honda

Hitoshi Nakayama

Hidekazu Miyairi

Yutaka Okazaki

Shinobu Furukawa

Hiroki Komagata

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Integrated semiconductor with shared electrodes between capacitor and transistor

Semiconductor device and method for manufacturing semiconductor device

A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

Semiconductor device and method for manufacturing the same

A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.

The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film.

Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films

Semiconductor device having oxide semiconductor layer

To establish a processing technique in manufacture of a semiconductor device including an In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor. An In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl, BCl, SiCl, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer can be selectively etched with little removal of the In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.

Method for manufacturing semiconductor device

Semiconductor device having an oxide semiconductor layer

A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor.

Etching method using mixed gas and method for manufacturing semiconductor device

Provided is a method for manufacturing a transistor by which the defective shape of a semiconductor device is prevented in the case where a source electrode layer and a drain electrode layer are formed on an oxide semiconductor film. A source electrode layer and a drain electrode layer are formed each having a cross-sectional shape with which disconnection of a gate insulating film is unlikely to occur even when the gate insulating film over the source electrode layer and the drain electrode layer has a small thickness. An oxide semiconductor film having a crystal structure over an insulating surface is formed; an electrode layer on the oxide semiconductor film is formed; and a thickness of an exposed portion of the oxide semiconductor film is reduced by exposing the oxide semiconductor film to dilute hydrofluoric acid with a concentration higher than 0.0001% and lower than or equal to 0.25%.

Growing community of inventors

Atsugi, Japan

Hiroshi Fujiki