J-devices Corporation

Hiroshi Demachi

Shinji Watanabe

Takashi Nakamura

Hirokazu Honda

Toshihiro Iwasaki

Shingo Nakamura

Hiroaki Matsubara

Tomoshige Chikai

Kiminori Ishido

Takeshi Miyakoshi

Shotaro Sakumoto

Sumikazu Hosoyamada

Yoshikazu Kumagaya

Michiaki Tamakawa

A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.

Semiconductor package

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.

Manufacturing method for semiconductor device

Growing community of inventors

Kanagawa, Japan

Hiroshi Demachi