Sharp Kabushiki Kaisha Corporation

Hiroshi Chikugawa

Masaru Ogawa

Yoshihiko Yamamoto

Eiji Kametani

Nobuyuki Miyauchi

Masaaki Katoh

Katsushige Masui

Takehiro Shiomoto

Zenpei Tani

Makoto Tsuji

Takaaki Horio

Hideki Ichikawa

Hideaki Tatsuta

Shinji Yudate

Kunio Suzuki

An image capturing device employing as illumination source(s) (flash apparatus(es)) a plurality of light emitting diodes emitting light of different colors; wherein such light emitting diodes are respectively made to emit light in pulsed fashion in turn by emitted color during exposure time(s). Furthermore, during exposure time(s), such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color, and/or such light emitting diodes may be made to sequentially emit light in pulsed fashion in turn by emitted color over multiple iterations.

Image capturing device having pulsed LED flash

A semiconductor light emitting deviceincludes: a plurality of light emitting elements; a light emitting element mounting memberon which said light emitting elementsare mounted; and a coating memberwhich covers a surface of the light emitting element mounting memberwhere said light emitting elementsare mounted. In the semiconductor light emitting device, said light emitting element mounting memberis provided with depressed sectionsat positions where said light emitting elementsare respectively mounted; said coating memberis provided with through holes at positions respectively corresponding to the depressed sections; inner wall surfaces of (i) each of the depressed sectionsand (ii) each of the through holes respectively form (i) a first reflection surfaceand (ii) a second reflection surface; and the second reflection surfacehas an angle with respect to an optical axis of said light emitting elementsmaller than an angle of said first reflection surfacewith respect to an optical axis of said light emitting element

Semiconductor light emitting device

A light emitting element is die-bonded to a portion of a lead frame exposed at the bottom of an opening formed at a top face of a resin package. A reflector to direct light emitted from the light emitting element towards a predetermined direction is attached to the top face of the resin package. Lead terminals are arranged so as to protrude from two opposite side regions of the resin package. A predetermined lead terminal among the plurality of lead terminals, connected to a portion where the light emitting element is die-bonded, is bent upwards, and soldered to the reflector by solder paste.

A pulse drive method for a light-emitting semiconductor devices having a plurality of light-emitting elements emitting light at different wavelengths and comprising first lit steps in which light-emitting element(s) of any of the emitted wavelengths is/are made to light as a result of being driven at drive setting(s) for each emitted wavelength, optical output(s) from the lit light-emitting element(s) is/are detected, and the light-emitting element(s) drive setting(s) is/are adjusted based on the detected light-emitting element optical output(s); and unlit steps in which the light-emitting elements of all of the emitted wavelengths are unlit for prescribed unlit time. The first lit steps are carried out in repeated fashion while the driven light-emitting element(s) is/are switched so as to cause the light-emitting element(s) to sequentially light in pulsed fashion in turn by emitted wavelength, and the unlit step respectively intervenes between each pair of successive iterations of the first lit steps.

Light-emitting semiconductor device pulse drive method and pulse drive circuit

A current of the same amount or in a constant ratio is applied to each of a combination of a blue light emitting diode having a small wavelength variation and a green light emitting diode having a large wavelength variation. With this, as an amount of applied current increases, an oscillation wavelength of the green light emitting diode having the large wavelength variation changes from a long wavelength side to a short wavelength side and mixes with a blue color of the blue light emitting diode having the small wavelength variation to gradually change chromaticity as a whole. When desired chromaticity is obtained, the amount of the current is fixed.

Light emitting apparatus generating white light by mixing of light of a plurality of oscillation wavelengths

A semiconductor light-emitting device includes a light-emitting element, a first lead frame having a main surface having the light-emitting element mounted thereon, a second lead frame spaced apart from the first lead frame, resin molded portions for fixing the first and second lead frames, and a heat-radiating member bonded to a back face of the first lead frame with a brazing member (electrically-conductive layer) containing metal interposed therebetween. The brazing member and the heat-radiating member are formed immediately below and around the light-emitting element.

Semiconductor light-emitting device and method of manufacturing the same

Light emitting semiconductor device(s) of the present invention is/are provided with three LED elements by way of lead frame(s) on substrate(s) Reflector(s)&#x2014;having parabolically curved surface(s) at inner wall(s) thereof is/are installed at periphery or peripheries of these LED elements. Radiative angle(s) of light radiating from such reflector(s) is/are controlled by alteration of height(s) of reflector(s). Such height(s) may be lowered to increase radiative angle(s) &#x3b8; of light therefrom so as to establish broader irradiative locus or loci and/or such height(s) may be raised to decrease radiative angle(s) &#x3b8; of light radiating therefrom so as to establish narrower irradiative locus or loci.

Light emitting semiconductor device and photographic illumination apparatus employing same

In a semiconductor laser device, a flange () of a cap () is provided with straight-line cut-off portions () that are the same in number as notches () of a stem (). With the cut-off portions () positioned so as not to overlap the notches () of the stem () in position, welding between the cap () and the stem () is performed. The cut-off portions () of the cap () secure obtainment of a reference planewith a large area in a place where the notches () of the stem () are absent. As a result, sufficient precision in optical characteristics can be secured while suppressing an influence of unevenness of the stem () having a small diameter on a deviation angle &#x3b8; of an optical axis from a normal line to a reference plane of an optical pickup.

Packaging for semiconductor laser device and method for producing the same

The present invention relates to an optical pickup used for an optical recording information instrument such as CD-ROM, CD-R, MO, DVD and the like, and a semiconductor laser device assembled to be incorporated in the optical pickup, as well as to a method for manufacturing said semiconductor laser device. The present invention also relates to a semiconductor laser element comprising a plurality of semiconductor laser chips, which is incorporated in the semiconductor laser device and to a method for manufacturing said semiconductor laser element, especially to an apparatus for accurately bonding and assembling a semiconductor laser element used in manufacturing said semiconductor laser element, such as a semiconductor laser chip die-bonding machine and the like.

Semiconductor laser device, optical pickup using the same, and apparatus and method for manufacturing the same

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

Semiconductor laser device and resin layer

A driving circuit of a semiconductor laser includes a photodiode receiving a light of the semiconductor laser, a first detecting circuit for calculating a mean value signal of outputs of the semiconductor laser in accordance with an output of the photodiode, a second detecting circuit for calculating a maximum value signal of the outputs of the semiconductor laser, a circuit receiving the mean value signal for supplying a bias current for driving the semiconductor laser, a high-frequency superimposing circuit for modulating the bias current by high-frequency waves, and a modulating degree control circuit comparing the mean value signal with the maximum value signal for making a period of time for which the minimum value of the optical output values of the semiconductor laser becomes zero, in accordance with the comparison results.

Growing community of inventors

Kashihara, Japan

Hiroshi Chikugawa