Tdk Corporation

Hiroshi Chihara

Hiroshi Shingai

Yoshitomo Tanaka

Yuki Nagamine

Junichi Yamazaki

Kumiko Yamazaki

Tsutomu Chou

Makoto Yoshida

Jiro Yoshinari

Hideki Hirata

Yoshinori Fujikawa

Hideaki Miura

Hisashi Suzuki

Hitoshi Sakuma

Kazuhiko Maejima

Masanori Kosuda

Osamu Shinoura

Yasuhiro Aida

Noriyuki Yasuda

Yuji Umeda

Masato Kurihara

Tsutomu Koyanagi

Ryu Ohta

Kazuhisa Inaba

A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula ABON(a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

Polycrystalline dielectric thin film and capacitor element

A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan &#x3b4;. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b&#x3e;1 and n&#x2265;0.7.

The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Piezoelectric element, piezoelectric actuator, piezoelectric sensor, hard disk drive, and ink-jet printer device

An active material with a sufficient cycle characteristic and a process for its production are provided. According to the process for production of an active material of this invention, an aqueous solution containing a metal fluorocomplex is contacted with a metal oxide to form a surface-modified layer on the surface of the metal oxide. The active material of the invention comprises a core section made of a metal oxide and a surface-modified layer covering the core section, wherein the surface-modified layer is an oxide containing a metal present in the core section and a metal not present in the core section.

Active material with a surface-modified layer covering a metal oxide core and an electrode and battery comprising the same

It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium tin oxide, an additive component having zinc oxide as a main component thereof, and a resin cured product, the content of the additive component being 0.1 to 50 wt % relative to the total amount of indium tin oxide and the additive component.

Transparent conductor

An optical recording medium includes an information layer having a recording film. The recording film contains Sb of 79 atomic % to 95 atomic % and Ge of 5 atomic % to 21 atomic % as main components, and is formed of a phase change material which does not contain the elements in the sixteenth group of the periodic table.

Optical recording medium

An optical recording medium of phase change type which exhibits an increased number of overwritable operations is provided. The optical recording medium comprises a substrate, and a first dielectric layer, a recording layer, a second dielectric layer, and a metal reflective layer disposed on the substrate in this order, and the first dielectric layer comprises a dielectric layer 1a on the side of the substrate and a dielectric layer 1b in contact with the recording layer. The dielectric layer 1a comprises ZnS--SiO.sub.2, and the dielectric layer 1b comprises Si.sub.3 N.sub.4 and/or Ge.sub.3 N.sub.4. The second dielectric layer may comprise a single layer of ZnS--SiO.sub.2, SiO.sub.2 or oxide of a rare earth metal. The second dielectric layer may also comprise a laminate of a dielectric layer 2a comprising ZnS--SiO.sub.2 on the side of the substrate and a dielectric layer 2b comprising SiO.sub.2 or oxide of a rare earth metal on the side of the reflective layer. The dielectric layer 1b has a thickness of 0.5 to 40 nm, and ratio of thickness of the dielectric layer 1b to the thickness of the first dielectric layer is up to 0.5.

Optical recording medium and its recording method

A thin film magnetic device includes an organic insulating layer of a raised shape and a soft magnetic alloy thin film covering the organic insulating layer. The soft magnetic alloy thin film has a composition which varies to provide a magneto-striction distribution such that magnetostriction is positive or negative in a top region and negative or positive in a bottom region of the raised shape whereby the device has uniaxial anisotropy in a desired direction.

Thin film magnetic device with plural valves of magnetostriction

Growing community of inventors

Tokyo, Japan

Hiroshi Chihara