Seiko Instruments Inc

Other

Agency of Industrial Science and Technology

Kabushiki Kaisha Toshiba

National Institute of Advanced Industrial Science and Technology

Director-general of Agency of Industrial Science and Technology

Agency of Industrial Science & Technology, Ministry of International Trade & Industry

Agency of Industrial Science and Technology, Kosaka Laboratory Ltd.

Hiroshi Bando

Naoki Shirakawa

Shigeru Wakiyama

Hiroshi Tokumoto

Fumiki Sakai

Wataru Mizutani

Shin-Ichi Ikeda

Akira Sakai

Kazutoshi Watanabe

Masatsugu Shigeno

Shinichi Ikeda

Hiroshi Murakami

Chikara Miyata

Takashi Wakatsuki

Haruki Nakagawa

Masayuki Shimura

Eiichi Suzuki

Ruiping Wang

Shigeo Okayama

A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula:{M(NaLiK)}{(TiZrHf)(NbTa)}Ois disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (BiK), (BiNa) and (BiLi) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06&#x3c;x&#x2266;0.3, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;0.3, 0&#x2266;(y+z)&#x2266;1, 0&#x3c;u&#x2266;1, 0&#x2266;v&#x2266;0.75, 0&#x2266;w&#x2266;0.2, 0&#x3c;(u+v)&#x2266;1 and &#x2212;0.06&#x2266;m&#x2266;0.06. This solid solution composition preferably forms the same rhombohedral-tetragonal morphotropic phase boundary as in PZT, is environmentally friendly, and displays an excellent piezoelectric constant d.

Piezoelectric ceramic, and piezoelectric, dielectric or pyroelectric element using the same

This invention relates to a process for the production of an oxide of a metal A by heating precursors of the oxide of a metal A, in the presence of an oxygen partial pressure control agent comprising an oxide of a metal B that is capable of assuming multiple valence numbers. The process is carried out under a condition that an ionization tendency relationship of A <B <A is satisfied, where i is a valence number of the metal A in the oxide to be produced and j is a valence number of the metal B in the oxygen partial pressure control agent.

Method of synthesizing metal oxides

A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.

Field-effect transistor

A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900&deg; C. to 1300&deg; C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000&deg; C. to 1500&deg; C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

High-melting-point conductive oxide, method of manufacturing the same, and high-temperature electrically conductive material based on the oxide

A scanning tunneling microscope according to the present invention comprises a tip for emitting spin-polarized electrons and a magnet for applying a magnetic field to this tip. This tip is constituted of a metal needle made of a tungsten and an EuS layer about 400 .ANG. which is coated on the surface of the metal needle. This tip is brought to such a close distance to the surface of the specimen that tunnel current flows. A magnetic field is applied to the axial direction of the tip a bias voltage is applied between the tip and the specimen and the tip is made to scan the surface of the specimen. The tip having a magnetic field applied to the axial direction thereof emits only spin-polarized electrons with the electron spins oriented in the axial direction. The spin-polarized electrons flows only in the area at the surface of the specimen where empty states for the electrons having spins in the parallel direction are distributed. By detecting the flow of the electrons, that is, the tunnel current, it is possible to obtain the distribution of the electrons having downward or downward spins. The shape of the pointed end of the tip is almost the same as that of a tip used in an ordinary STM. This makes it possible to measure the distribution of the electron spins with an atomic scale resolution.

Scanning tunneling microscope

The amount of deformations such as expansions or contractions of a substance caused in accordance with irradiation of cyclically interrupted monochromatic light is detected by either the changes in a tunnel current sensitive to the changing distance between a sample surface and a detection probe or the amount of changes in a probe fine feed mechanism keeping the tunnel current constant between a sample surface and a detection probe at all times, so that the absorption spectrum intrinsic to the substance relative to the irradiating optical energy according to its wavelength is measured to examine the optical properties of the substance.

Tunnel current detecting photo-acoustic spectrometer

A probe is shifted at a distance where the probe and a material to be obsed are sufficiently far away from each other relative to the roughness of the material's surface. This method prevents the probe from colliding with the material's surface during the shift of the probe thereby enabling high speed shift of the probe. Further, a micro-drive mechanism for controlling tunnel currents may be stopped during the shift in order to minimize the drift which may be caused by heat generated inside the micro-drive mechanism. Therefore, it is particularly advantageous to apply this STM measuring method for high-speed and stable measurement of a very large surface area and a very rough surface.

Method of measurement by scanning tunneling microscope

A relative displacement control apparatus provides both coarse and extremely fine precise control over displacements between a sample and a detecting probe as required, e.g. in operations of optical instruments, analyzing instruments and scanning tunneling microscopes. This precise fine displacement is produced through a double-lever-action which is created substantially by means of an arm assembly preferably with a piezoelectric drive for precise displacement control, a support pivotally holding the arm assembly, a rigid arm fixed solidly atop the support and a pointed stop or 'foot' fixed in the proximity of the free end of the rigid arm.

Relative displacement control apparatus

Growing community of inventors

Tsukuba, Japan

Hiroshi Bando