Nippon Telegraph and Telephone Corporation

Other

Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Fuji Photo Film Company, Limited

Hiroshi Ban

Akinobu Tanaka

Tadao Takeda

Akihiko Nakano

Toshinori Ohmi

Eiji Yanagawa

Hideyuki Unno

Yoshio Kawai

Hironori Matsumoto

Osamu Watanabe

Minoru Takamizawa

Jun Watanabe

Tadayoshi Kokubo

Yoshikazu Takahashi

Motoyuki Yamada

Takao Kimura

Jiro Nakamura

Masaaki Tanno

Atsushi Sakamoto

Fujio Yagihasi

Embodiments of the present invention provide a probe card in which the positional shift of the tip of a probe can be compensated for in response to a change in the temperature, and a wafer test in a wide range of temperatures can be performed. More specifically, the probe card includes a substrate, a probe composed of a first metallic material having a first thermal expansion coefficient, a base of the probe being joined to the substrate, a tip of the probe coming into contact with a connection terminal of an electronic device, and a thermal compensation member composed of a second metallic material having a second thermal expansion coefficient that is higher than the first thermal expansion coefficient, a base of the thermal compensation member being fixed to the substrate, a tip of the thermal compensation member coming into contact with the probe at an intermediate portion between the base of the probe and the tip of the probe.

Probe card, method for manufacturing probe card, and prober apparatus

In the present semiconductor device, a chip with an LSI circuit is secured to a board (with the chip flipped) so as to be level. The LSI circuit on the chip is specified to operate normally only when the chip is level. Further, the back of the chip is processed so as to give stress to the chip. The chip has a reduced thickness of 50 &mgr;m or less (alternatively 30 &mgr;m to 50 &mgr;m). Therefore, when the chip is detached from the board, it deforms and is no longer level due to the stress, which prohibits the LSI circuit from operating normally. This way, the present semiconductor device ensures that no analysis can be conducted on the LSI circuit once the chip is detached.

Semiconductor device and method of manufacturing the same

A semiconductor device includes, on a protective film laminated on a circuit principal part, (i) a light blocking film provided so as to cover the circuit principal part, (ii) an aluminum oxide film provided so as to completely cover the light blocking film, and (iii) a light-blocking upper wiring provided on the aluminum oxide film. An attempt to exfoliate the light blocking film or the light blocking upper wiring causes the resistance-detection-use upper wiring to break or thin, thereby resulting in an increase in the resistance of the resistance-detection-use wiring. The increase in the resistance is detected by the resistance detecting circuit part, and malfunction or inoperativeness of the circuit principal part is caused in response of detection. By so doing, the circuit principal part can be protected from analysis.

Semiconductor device wherein detection of removal of wiring triggers impairing of normal operation of internal circuit

A semiconductor device in accordance with the present invention includes a semiconductor element chip pressed and secured on a distortion die-pad so that the semiconductor element chip, sealed inside a package, is held in a predetermined distorted state. The predetermined distorted state is preferably downward or upward warping. The semiconductor element chip operates normally in the distorted state, and does not operate normally when the semiconductor element chip is separated from the semiconductor device, and thereby released from the distortion and laid alone. This ensures that the semiconductor element chip is protected from circuit analysis.

A semiconductor chip has a nonvolatile memory formed on the upper surface side of a semiconductor substrate. The chip includes at least one recess portion formed in the lower surface of the semiconductor substrate. The recess portion is located in a region corresponding to the nonvolatile memory. A method of manufacturing the semiconductor chip is also disclosed.

Semiconductor chip and method of manufacturing the same

A positive resist composition comprising a poly(p-hydroxystyrene) as matrix resin which is synthesized by an anionic polymerization method and has a weight average molecular weight of from 8,000 to 20,000, bis(p-t-butoxycarbonylmethyl)thymolphthalein as dissolution inhibitor, bis(p-t-butylphenyl)iodonium triflate as acid generator; a compound which contains one amino group and one carboxyl group to function as acid deactivator and propylene glycol monomethyl ether acetate as organic solvent.

Positive resist composition comprising a bis

A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.

Negative working resist material, method for the production of the same

A resist composition comprising a compound having an active hydrogen and an alkali-soluble siloxane polymer containing in the molecules thereof at least one unit selected from a unit represented by formula (I) and a unit represented by formula (II) ##STR1## wherein the X's are the same or different and each represents one member selected from the group consisting of hydrogen, ##STR2## (where R represents hydrogen, a hydrocarbon group, or a substituted hydrocarbon group); and a carboxyl group;

Resist composition comprising a siloxane or silsesquioxane polymer

A positive resists material for high energy-sensitive positive resists which can be developed in aqueous alkali solution, said material comprising (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups, (B) a solution blocking agent, and (C) an onium salt, and being characterized in that said solution blocking agent contains at least one t-butoxycarbonyloxy group per molecule, said onium salt is bis(p-t-butylphenyl) iodinium trifluormethylsulfonate represented by the following formula (1): ##STR1## and the weight proportions of (A), (B), (C) are given by the relations: 0.07.ltoreq.B-.ltoreq.0.40, 0.005.ltoreq.C.ltoreq.0.15, 0.55.ltoreq.A, A+B+C=1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed.

Growing community of inventors

Machida, Japan

Hiroshi Ban