Fujitsu Corporation

Hiroshi Ashida

Kazuo Kobayashi

Masashige Sato

Shinjiro Umehara

Yoji Ohashi

Takao Ochiai

Miki Tomotani

A radio communication apparatus includes a first antenna, a second antenna, a third antenna, and a processor that varies a phase difference between a first signal transmitted from the first antenna and a second signal transmitted from the second antenna, measures a received power pattern of a synthesized signal of the first signal and the second signal that is received by the third antenna, and adjusts a phase shift of a signal that is transmitted from the first antenna or the second antenna, based on a difference between the measured received power pattern and a received power pattern obtained by calculation.

Radio communication apparatus and phase adjustment method

A stacked-waveguide substrate includes: a body configured to include a first dielectric-substrate, a second dielectric-substrate, and a third dielectric-substrate which are stacked in this order; a first conductor-pattern configured to be formed on a bottom surface of the first dielectric-substrate; a second conductor-pattern configured to be formed on a top surface of the third dielectric-substrate in a position corresponding to the first conductor-pattern; a first conductor-film configured to be located at an interface between the first dielectric-substrate and the second dielectric-substrate, and to have a first opening which faces the first conductor-pattern; a second conductor-film configured to be located at an interface between the second dielectric-substrate and the third dielectric-substrate, and to have a second opening which faces the second conductor-pattern; a first wiring line configured to cross the first opening to the first conductor-pattern; and a second wiring line configured to cross the second opening to the second conductor-pattern.

Stacked waveguide substrate, radio communication module, and radar system

A wireless communication module includes an antenna on a first conductive wall among the conductive walls enclosing a closed space; a tag reader connected with the antenna to read an RFID tag in the closed space; and a reflective part having a thin film or plate shape between the first and second conductive walls facing each other. The reflective part partitions the closed space into first and second spaces. The antenna radiates a radio wave that is reflected by the reflective part to become a first reflected wave in the first space. The radio wave also transmits through the reflective part, reflected by the second conductive wall, and transmits through the reflective part to become a second reflected wave in the first space. The position of the reflective part is determined so that the first and second reflected waves are canceled by each other.

Wireless communication module, wireless communication system, and communication method

The magnetic memory device includes a magnetic shield film, and a magnetoresistive effect elementformed over the magnetic shield filmand including a magnetic layer, a non-magnetic layerand a magnetic layer, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield filmformed over the side wall of the magnetoresistive effect element. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect elementcan be effectively prevented.

Magnetic memory device and method for fabricating the same

A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.

Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device

The magnetoresistive effect element comprises a pinned magnetic layerhaving a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layerformed on the pinned magnetic layer, a free magnetic layerformed on the nonmagnetic spacer layerand formed of a single ferromagnetic layer, a nonmagnetic spacer layerformed on the free magnetic layer, and a pinned magnetic layerof a multilayered SAF structure formed on the nonmagnetic spacer layer, wherein a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, and a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, are opposite to each other.

Magnetoresistive effect element and magnetic memory device

A dielectric film forming method includes forming on a surface of underlie substance a film of an oxide dielectric material including lead or bismuth, treating a surface of the oxide dielectric film with solution of nitric acid, and crystallizing the oxide dielectric film by annealing the film to obtain an oxide dielectric film. This provides a method of forming a dielectric film with good dielectric characteristics.

Method of forming dielectric film with good crystallinity and low leak

The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1&times;10,atoms/cm,. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.

Growing community of inventors

Kawasaki, Japan

Hiroshi Ashida