Komatsu Corporation

Sumitomo Mitsubishi Silicon Corporation

Mitsubishi Heavy Industries Limited

Nec Corporation

Mitsubishi Hitachi Power Systems, Ltd.

Hiroshi Asano

Naoki Sekiyama

Shinichi Terada

Takayuki Kubo

Taku Arakawa

Fumio Kawahigashi

Satoshi Hada

Masaaki Uetake

Kazunari Kawai

Norifumi Hirata

Manabu Nishimoto

Tomofumi Shintani

Masahiko Okui

Eiichi Morioka

Masahiro Suwano

Yuuichi Kodama

Takashi Minami

Katsutoshi Ooe

Takahiko Imada

Junya Tanimoto

Hideki Watanabe

Yasuoki Tomita

Hiroki Murakami

Eiji Akita

Yoshinori Rokugo

Masahito Kataoka

Shinichiro Miki

Takashi Fukura

Masakazu Onishi

Naohiro Takaoka

Akira Tsujino

Wataru Kawai

A tunnel excavation device includes a front body section and a rear body section. The front body section includes a cutter head, a cutter head support, peripheral plates, a roof shoe, and side shoes. The cutter head includes a plurality of roller cutters. The cutter head support supports the cutter head. The peripheral plates, the roof shoe, and the side shoes are provided to the outer circumference and can be collapsed inward. The rear body section is disposed to the rear of the front body section. The rear body section includes a gripper section. The gripper section obtains a reaction force for performing excavation.

Tunnel excavation device

A tunnel excavation device includes a front body portion configured to support a cutter head and a rear body portion. The rear body portion includes a gripper carrier and a gripper portion. The gripper carrier is disposed in a rear of the front body portion. The gripper portion is provided on the gripper carrier. The gripper portion includes a groove portion and a wheel portion. The groove portion is formed in a recess shape toward the rear main body. The wheel portion is disposed in the groove portion.

A tunnel excavation device includes a main body a frame and a workbench. The main body includes a front body section and a rear body section. The front body section includes a cutter head provided with a plurality of disk cutters. The rear body section is disposed behind the front body section and includes a gripper section for obtaining a reaction force when excavating. The frame is disposed continuously behind the main body. The workbench is disposed above the frame so as to be rotatable with respect to the frame.

A tunnel excavation device includes a first body portion and an erector device. The first body portion includes a cutter head and a support portion rotatably supporting the cutter head. The erector device is configured to transport a supporting member toward an excavated wall surface. The erector device is provided on the support portion. The erector device includes a ring portion holding the supporting member, and a posture changing device configured to change an angle formed by a center axis of the ring portion and a rotation axis of the cutter head in a plan view.

The tunnel excavation device includes a front body section and a rear body section. The front body section includes a cutter head, a cutter head support, and a vertical shoe. The rear body section is disposed to a rear of the front body section and includes a gripper section for obtaining a reaction force when excavating. The cutter head includes a plurality of roller cutters. The cutter head support supports the cutter head. The vertical shoe is disposed below the cutter head support and is provided in a turnable manner to the cutter head support.

An auxiliary tunneling apparatus includes a reaction force receiver and first and second split components. In the excavation of a second tunnel by a boring machine, the reaction force receiver forms a replacement face of a side wall of the second tunnel on a first tunnel side where the first and second tunnels intersect each other, and a gripper of the boring machine pushes against the replacement face. The first and second split components are installed to push against the side wall of the first tunnel, support the reaction force receiver within the first tunnel, and move back and forth with respect to the side wall of the first tunnel.

Auxiliary tunneling apparatus

This tunnel excavation method includes a step of excavating three first tunnels that are substantially parallel to each other in a first excavation step. Second tunnels are excavated that intersect the first tunnels in a second excavation step. A boring machine is used that performs excavation in a state in which a gripper pushes against the side wall of the tunnel.

Tunnel excavation method

Gas turbine blades which simplify the formation of cooling channels provided inside the turbine blades while simultaneously avoiding loss of turbine blade strength and rigidity due to forming of the cooling channels. Cooling channels provided in the interior of a gas turbine blade include a plurality of straight channel-like base-side elongated holes extending in a longitudinal direction at a base side of the turbine blade, a plurality of straight channel-like tip-side elongated holes extending in a longitudinal direction at a tip side of the turbine blade, and a plurality of communicating hollow portions interposed at connection portions between the two types of elongated holes to allow the two types of elongated holes to communicate with each other, and have larger cross-sectional areas than the channel cross-sectional areas of both elongated holes. The communicating hollow portions are formed to match the position of a platform portion of the turbine blade.

Gas turbine blade, manufacturing method therefor, and gas turbine using turbine blade

A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cmafter repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1&#xd7;101&#xd7;10atoms/cmprovides a surface density of not more than 1 counts/cmfor the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

Silicon single crystal wafer for particle monitor

In single crystal growth by means of a CZ method, a granular/lump polycrystalline raw material is additionally supplied into a raw material melt in a crucible through a vertical charging tube. A raw material accumulating section is provided at a site part way downward in the vertical charging tube working in such a way that a predetermined amount of the polycrystalline raw material is accumulated in the raw material accumulating section and the polycrystalline raw material in excess of the predetermined amount falls down. The polycrystalline raw material falling down in the vertical charging tube strikes against the accumulated raw material in the raw material accumulating section, thereby absorbing a shock of the falling raw material. The accumulated raw material works simultaneously as a protective member, thereby preventing breakage of the tube accompanying absorption of the shock from occurring. It is therefore possible to prevent melt splashing that is problematical when a lump raw material for recharge is charged using a vertical charging tube.

Apparatus for supplying raw material

In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member opposing to the outer peripheral surface of the single crystal is restricted to 500&deg; C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member is 10 to 50 mm. The height H of the cooling member is 0.1 to 1.5 times the diameter D of the single crystal

Crystal growth method

An apparatus for growing a crystal, using the cooler surrounding the single crystal for high speed pulling. The cooler is prepared using a copper-based metal and is water cooled. The supporting arm that supports the cooler is prepared using stainless steel or the like, which is higher in mechanical strength than copper-based metals and is inferior in thermal conductivity, and is detachably connected to the cooler . Excessive cooling of the supporting arm and disposition due to precipitation of silicon oxide are prevented, leading to improvement in disposition free pulling rate without the prevention of speed-up. The cost of manufacture of the cooler is saved. The support strength of the cooler is improved.

Crystal growth apparatus

In a high rate pulling with a cooler surrounding a single crystal steam explosion by leakage from the cooler is prevented. Flow rates La, Lb of cooling water are measured by flowmeters on a cooling water inflow side and cooling water outflow side of the cooler When flow rate difference &Dgr;L (La&minus;Lb) determined from the flow rates La, Lb exceeds 20 cc/minute, open/close valves are operated to stop water supply to the cooler and drain outward the cooing water in the cooler

Crystal growing apparatus

An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.85D and the bottom side of the thermal insulating member below the cooling member having an inside diameter smaller than the inside diameter of the bottom of the cooling member.

Growing community of inventors

Tokyo, Japan

Hiroshi Asano