Kyocera Corporation

Brother Kogyo Kabushiki-Kaisha

Nikon Corporation

Hiroshi Aida

Kenji Kitazawa

Kazuhiko Mikami

Shunichi Murakawa

Shoji Kohsaka

Yumiko Itoh

Katsumi Nakamura

Tetsuzi Hayasaki

Yoshihisa Sechi

Atsuo Sakaida

Yutaka Hayashi

Daisuke Takahashi

Yasunori Kawanabe

Shin Ishikura

Kazuhiro Kuchimachi

Chitoshi Ueki

Hisamitsu Sakai

Makoto Higashibeppu

Koichi Nagasaki

Takero Fukudome

Yoshihiro Yuu

Saburo Nagano

Yumiko Ito

An inkjet head has: a channel unit having a plurality of nozzles and a plurality of pressure chambers respectively communicating with the nozzles; and an actuator unit on the channel unit and having a piezoelectric sheet, a plurality of individual electrodes respectively arranged to positionally correspond to the pressure chambers respectively and a common electrode sandwiching the piezoelectric sheet together with the plurality of individual electrodes. The actuator unit has a thickness of 20 &#x3bc;m to 100 &#x3bc;m and a surface roughness of the end face of the actuator unit including an intersection with channel unit and the actuator unit is 0.15 &#x3bc;m to 0.5 &#x3bc;m, and at least part of the end face is sealed by a resin film.

Inkjet head

Low thermal expansion ceramics contains a cordierite crystal phase, wherein a phase of a crystalline compound containing at least one element selected from the group consisting of an alkaline earth element other than Mg, a rare earth element, Ga and In, is precipitated in the grain boundaries of said crystal phase, said ceramics has a relative density of not smaller than 95%, a coefficient of thermal expansion of not larger than 1&#xd7;10/&#xb0; C. at 10 to 40&#xb0; C., and a Young's modulus of not smaller than 130 GPa. That is, the ceramics has a small coefficient of thermal expansion, is deformed very little depending upon a change in the temperature, has a very high Young's modulus and is highly rigid and is resistance against external force such as vibration. Accordingly, the ceramics is very useful as a member for supporting a wafer or an optical system is a lithography apparatus that forms high resolution circuit patterns on a silicon wafer.

Ceramic sintered product and process for producing the same

An actuatorin which a displacement elementhas a piezoelectric ceramic layerand a pair of electrodesinterposing therebetween the piezoelectric ceramic layer. The entire thickness of the actuatoris 100 &#x3bc;m or less. The piezoelectric ceramic layerand the substratehave as their principal component a perovskite crystal containing at least Pb; Zr and Ti, and, the maximum difference in a composition ratio Pb/(Ti+Zr) between the surface of the piezoelectric ceramic layerand the inside of the substrateis 0.02 or less. This reduces characteristic variation.

Actuator, its manufacturing method and printing head

A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BClor Clis formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3YO.5AlO, 2YO.AlO, YO.AlOor disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 &#x3bc;m or less in center line average roughness Ra is utilized.

Ceramic material resistant to halogen plasma and member utilizing the same

A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl or Cl is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and/or Si, for example, 3Y O &middot;5Al O , 2Y O &middot;Al O , Y O &middot;Al O or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 &mgr;m or less in center line average roughness Ra is utilized.

Ceramic materials resistant to halogen plasma and components using the same

Low thermal expansion ceramics contains a cordierite crystal phase, wherein a phase of a crystalline compound containing at least one element selected from the group consisting of an alkaline earth element other than Mg, a rare earth element, Ga and In, is precipitated in the grain boundaries of said crystal phase, said ceramics has a relative density of not smaller than 95%, a coefficient of thermal expansion of not larger than 1&times;10,/&deg; C. at 10 to 40&deg; C., and a Young's modulus of not smaller than 130 GPa. That is, the ceramics has a small coefficient of thermal expansion, is deformed very little depending upon a change in the temperature, has a very high Young's modulus and is highly rigid and is resistance against external force such as vibration. Accordingly, the ceramics is very useful as a member for supporting a wafer or an optical system is a lithography apparatus that forms high resolution circuit patterns on a silicon wafer.

The semi-insulating aluminum nitride sintered body of this invention is composed of aluminum nitride particles, electroconductive fine particles having a volume inherent resistivity value of not larger than 10.sup.2 .OMEGA..multidot.cm which are dispersed among the aluminum nitride particles and an intergranular phase formed from an oxide containing at least one element selected from the group consisting of Ti, Ce, Ni, Ta, Y, Er and Yb, or from Si. This sintered body has a volume inherent resistivity value of 10.sup.4 to 10.sup.11 .OMEGA..multidot.cm, and is very useful, for example, as a member for removing static electricity, or a dielectric layer of an electrostatic chuck. Since dispersions of volume inherent resistivity values are very small, a material having a volume inherent resistivity value within a certain range can be produced with good reproducibility. Accordingly, the yield is high, and the productivity is very good.

Semi-insulating aluminum nitride sintered body

A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.

Wafer support member

A ceramic resistor comprising chiefly an aluminum nitride, and an electrostatic chuck using the ceramic resistor as a resistor layer. The ceramic resistor comprises chiefly an aluminum nitride crystal phase, and is doped with at least one kind of atoms selected from the group consisting of elements of the Groups 2b, 4b and 6b of periodic table, and exhibits a volume resistivity of not larger than 10.sup.14 .OMEGA.-cm at 25.degree. C.

Ceramic resistor and electrostatic chuck having an aluminum nitride

Disclosed is a method for the production of diamond films, which comprise introducing a diamond-forming gas into a reaction chamber in which a substrate is located, activating the gas in the reaction chamber and depositing diamond on the substrate by decomposition of the gas, wherein the diamond-forming gas is a gas or gas mixture containing hydrogen, oxygen and carbon atoms at an atomic ratio satisfying requirements represented by the following formulae:

Method for producing diamond films

Disclosed is a method for the production of diamond films, which comprises introducing a diamond-forming gas into a reaction chamber in which a substrate is located, activating the gas in the reaction chamber and depositing diamond on the substrate by decomposition of the gas, wherein the diamond-forming gas is a gas or gas mixture containing hydrogen, oxygen and carbon atoms at an atomic ratio satisfying requirements represented by the following formulae:

Growing community of inventors

Kokubu, Japan

Hiroshi Aida