Hamamatsu-photonics K.k.

Mitsubishi Heavy Industries Limited

Japan Aerospace Exploration Agency

Toyohashi University of Technology

Hiroo Yamamoto

Seiichiro Mizuno

Sho Morita

Toshiki Wakamori

Mitsuhito Mase

Masatoshi Ishihara

Kazuki Fujita

Harumichi Mori

Akihiro Shimada

Yasuhiro Suzuki

Masaki Mizoguchi

Hajime Ishihara

Makoto Kobayashi

Keiki Taguchi

Kazuaki Sawada

Yoshikatsu Kuroda

Kazuhisa Yamamura

Nao Inoue

Daisuke Matsuura

Tadayuki Takahashi

Shin Watanabe

Kei Gemba

Shin'ichiro Takeda

Takayuki Kurashina

Kazumasa Kosugi

Yoshiaki Ohshige

Chihiro Suzuki

Provided is a photosensor including a light receiving part generating electric charge according to incident light, a charge transfer gate configured to transfer the electric charge generated in the light receiving part, and a signal generation unit configured to generate a charge transfer signal applied to the charge transfer gate, in which the signal generation unit generates the charge transfer signal so that the charge transfer gate is brought into a charge transfer state in a first time range of a first period belonging to an n-th (n is an integer of 1 or more) frame and the charge transfer gate is brought into a charge transfer state in a second time range of a second period belonging to an m-th (m is an integer of 1 or more different from n) frame.

Photosensor, and driving method for photosensor

An ion detection device includes an ion sensor having a sensitive film immersed in an aqueous solution and outputting an output signal in accordance with a potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Ion detection device and ion detection method

A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Smell detection device and smell detection method

A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

Odor sensor and odor sensing method

A solid-state imaging device includes M pixel units to and a correction unit. The pixel unit includes a main amplifier, a capacitive element, a first switch, a second switch, a photodiode, a feedback capacitive element, and an initialization switch. The correction unit includes a null amplifier, a capacitive element, a first switch, and a second switch. An effective offset voltage of the main amplifier is small.

Solid-state imaging device and amplifier array

A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

Light detection element and light detection device

A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

Differential amplifier, pixel circuit and solid-state imaging device

A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.

Light detection device

An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Ion concentration distribution measuring device

The signal processing board includes a plurality of signal processing circuits configured to process signals output from a plurality of pixels of an infrared detecting element. The signal processing board includes an element placement area where the infrared detecting element is placed, and a circuit placement area positioned outside the element placement area to surround the element placement area when viewed from a direction orthogonal to the signal processing board. The signal processing board includes a plurality of insulating layers that are stacked on a surface side opposing the semiconductor substrate. A plurality of signal processing circuits are placed in the circuit placement area. A heat-conducting layer is placed to be positioned on at least one of the insulating layers and in the element placement area, in the signal processing board. The heat-conducting layer has a heat conductivity that is higher than a heat conductivity of the insulating layers.

Infrared detection device

A radiation measuring apparatus () includes a scatterer detector (A), an absorber detector (B) and a processing unit (). Pixel electrodes () of the scatterer detector (A) and the absorber detector (B) are arranged such that a distance between centers of two neighbor pixel electrodes () is smaller than a mean free path of a recoil electron generated in the Compton scattering of an electromagnetic radiation. The processing unit () specifies and incidence direction of the electromagnetic radiation based on a recoiling direction to which the recoil electron recoils. In this way, an electron tracking-type Compton camera is realized which confines the incidence direction of the electromagnetic radiation by using the recoiling direction of the recoil electron in a Compton camera using a semiconductor detector.

Radiation measuring apparatus and radiation measuring method

In a signal processing device of an embodiment, an integration circuit accumulates a charge from a photodiode in an integrating capacitor element, and outputs a voltage value according to the amount of charge. A comparator circuit, when the voltage value from the integration circuit has reached a reference value, outputs a saturation signal. A charge injection circuit, in response to the saturation signal, injects an opposite polarity of charge into the integrating capacitor element. A counter circuit performs counting based on the saturation signal. A holding circuit holds the voltage value from the integration circuit. An amplifier circuit outputs a voltage value that is K times (where K&#x3e;1) larger than the voltage value held by the holding circuit. An A/D converter circuit sets a voltage value that is K times larger than the reference value as the maximum input voltage value, that is, a full-scale value, and outputs a digital value corresponding to the voltage value from the amplifier circuit.

Signal processing device, including charge injection circuit, and photodetection device

A photodetecting deviceincludes a photodiode PD, a switch SWfor the photodiode, an integrating circuit, and a noise removing circuit. The integrating circuitaccumulates in a capacitor Can electric charge input from the photodiode PDthrough the switch SWfor the photodiode, and outputs a voltage value according to the amount of the accumulated electric charge. The noise removing circuitincludes an amplifier A, five switches SWto SW, four capacitors Cto C, and a power supply V. The noise removing circuittakes in a voltage value that is output from the integrating circuitat a time where the switch SWis first turned from a closed state to an open state, and after the time, outputs a voltage value according to a difference between the voltage value that is output from the integrating circuitand the voltage value previously taken in.

Photodetector

An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation. When background light is weak and the overall intensity of incident light is low, a comparatively small capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected at high sensitivity, regardless of the surrounding conditions.

Light detection apparatus

The A/D converting circuitis provided with a differential amplifying portion, a first variable capacitance portionA, a second variable capacitance portionB, a comparing portion, a connection controlling portion, a first feedback portionA and a second feedback portionB. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portionare converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portionA, a second variable capacitance portionB, a comparing portionand a connection controlling portion) and output. A difference in potential between the first common point Pand the second common point Pis fed back to the differential amplifying portionby the first feedback portionA and the second feedback portionB, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.

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Hamamatsu, Japan

Hiroo Yamamoto