Nec Corporation

Nec Magnus Communications, Ltd.

Hiroo Hongo

Koji Kudo

Kenji Kobayashi

Kenichi Ishii

Hisato Sakuma

Takayuki Nyu

Toshitsugu Sakamoto

Wataru Hattori

Hiroshi Sunamura

Yukiko Morioka

Masahiko Ishida

Hisao Kawaura

Fumiyuki Nihey

Toshio Baba

Ryosuke Kuribayashi

Yukinori Ochiai

Jun-ichi Fujita

Fumiyuki Nihei

Masaki Yasukawa

This method for ascertaining the state of a fixed storage battery has: (a1) a step for storing operating history data for a storage battery; (a2) a step in which the storage battery is completely discharged and the charging energy required to fully charge the storage battery is measured by a charge amount measurement device, thereby updating, at regular intervals, data on the charging energy required for the storage battery to be fully charged; and (a3) a step for estimating the electric storage capacity of the storage battery from the operating history data and the updated data on the charging energy required for the storage battery to be fully charged.

Method for ascertaining storage battery state, state-ascertaining system, and computer program

The state of a battery parameter at the time of state estimation is estimated by using a plurality of pieces of parameter transition information (k, k+1), each piece of information representing an aspect of a temporal change in the battery parameter and representing the aspect of the temporal change until a predetermined state is achieved after a predetermined time that has elapsed from an initial state for each of use environments of a battery, and use environment information representing the use environment of the battery from the time of the start of use to the time of state estimation. In a case where the use environment of the battery is transited from a k-th use environment to a (k+1)-th use environment, a battery parameter pafter being used in the k-th use environment is calculated by using the parameter transition information k corresponding to the k-th use environment, and thereafter a battery parameter pafter the battery in the state of the battery parameter pis used in the (k+1)-th use environment is calculated by using the parameter transition information k+1 corresponding to the (k+1)-th use environment.

Battery state estimation device, battery state management system, battery, battery state estimation method, and non-transitory storage medium

A controlled apparatus periodically transmits state information indicating the state of the apparatus, and when the state has been changed, transmits state information indicating the state after the change. Upon receiving state information from the controlled apparatus, a control apparatus, when not requesting a change of state in the controlled apparatus, returns the state information to the controlled apparatus, and when requesting a change of the state in the controlled apparatus, changes state parameters in the state information that correspond to the state to be changed to required values and transmits the state information after the change to the controlled apparatus as a control command. The controlled apparatus, upon receiving the control command from the control apparatus, changes to a state in accordance with the state parameters that follow the change and transmits the state information indicating the state after the change to the control apparatus.

Slave device requesting its master device not to cancel its power saving mode

A secondary battery has a progressively degrading SOC that is an SOC at which the battery performance degrades during storage, and is charged and discharged by a controller. An information processor holds a first threshold value set in advance and lower than the progressively degrading SOC of the secondary battery, and a second threshold value set in advance and higher than the progressively degrading SOC, makes the controller continue an operation to charge the secondary battery from the first threshold value to the second threshold value at the time of charging the secondary battery based on the value of the SOC of the secondary battery detected by the controller, and makes the controller continue an operation to discharge the secondary battery from the second threshold value to the first threshold value at the time of discharging the secondary battery based on the value of the SOC of the secondary battery detected by the controller.

Secondary battery system and charge and discharge method for the same

An electric device has an electric power measurement unit with an electric power detection element measuring consumed electric power and an information communication element transmitting the measured power. An electric power meter has an information communication element measuring and transmitting total electric power consumed indoors. An information processing unit stores the measured values in every predetermined sampling period. If a difference &#x3b1; of two measurement values of the electric power detection element is a finite value, the information processing unit calculates and stores both a difference &#x3b2; of two measurement values of the electric power meter corresponding to the two measurement values and &#x3b2;/&#x3b1;, and calibrates the amount of electric power consumed by the electric device and that is measured by the electric power detection element using a median of values of &#x3b2;/&#x3b1; obtained in a predetermined measurement period or a median of a predetermined number of values of &#x3b2;/&#x3b1;.

Electric power measurement system, electric power measurement method, and information processing device

A secondary battery has a progressively deteriorating SOC in which battery performance deteriorates when the secondary battery is stored, and is charged and discharged by a control device. An information processing device stores a preset first threshold smaller than the progressively deteriorating SOC of the secondary battery and a preset second threshold greater than the progressively deteriorating SOC, and separates the range from the minimum SOC to the maximum SOC of the secondary battery into, at least, two regions by setting the section from the first threshold to the second threshold as a boundary to thereby cause the control device to charge or discharge the secondary battery within any of the above regions.

Secondary battery system and operating method of secondary battery

In a predetermined interval, electric power that is generated by power-source equipment is charged to a storage device and the amount of electric power that is accumulated in the storage device is reported from a communication device to a device that is provided to an electric power provider or a consumer. After the passage of a predetermined time interval, the amount of electric power that was previously reported to the device that is provided to the electric power provider or the consumer is discharged from the storage device and supplied to the electric power distribution system.

Electric power control system and method

A field-effect type transistor has: a source electrode; a drain electrode being a metal electrode; a semiconductor layer provided to be in contact with both of the source electrode and the drain electrode; and a gate electrode provided to face at least a part of the semiconductor layer. The gate electrode has: a first gate electrode; and a second gate electrode provided closer to the drain electrode than the first gate electrode is. The second gate electrode is so connected as to have a same potential as the drain electrode and is electrically isolated from the first gate electrode. Consequently, in a display device, the off-leakage current is suppressed, and reduction in a pixel area and a bus interconnection width is suppressed.

Field-effect type transistor having two gate electrodes and display element using the same

A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (). A patterning of the resist film is conducted by a lithography. The substrate () having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle () to the surface of the substrate (), while removing the resin in the patterned resist.

Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof

When a predetermined voltage is applied between electrodes (), metal ions deposit in a solid electrolyte (), and thereby a conduction channel () is formed therein. The solid electrolyte switch () is thus turned on. Because this deposition mechanism is reversible, application of reverse voltage between the electrodes of the solid electrolyte switch () already turned on makes the deposited metal atoms to migrate in the solid electrolyte to thereby thin the conduction channel, thereby the channel finally disappears, and the solid electrolyte switch () is turned into a non-conductive state. Use of this switch successfully realizes an IC tag which can automatically be nullified without artificial nullification.

ID tag

A catalyst supporting substrate includes a first region () which is formed on a substrate (); and a second region () which is formed covering a part of the first region. The first region () includes a catalyst supporting portion () containing a first material. The second region () includes a catalyst portion () containing a second material which is different from the first material. The first material includes a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof. The second material is a catalyst which grows carbon nanotubes in a vapor phase.

Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes

There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

Growing community of inventors

Tokyo, Japan

Hiroo Hongo