Canon Kabushiki Kaisha

Hiroo Akabori

Koichiro Iwata

Hiroyuki Morita

Takeshi Akiyama

Kazuki Ohshitanai

Hideo Kobayashi

Toru Koizumi

Takeshi Ichikawa

Mamoru Miyawaki

Osamu Koyama

Katsumi Kurematsu

Masaaki Iwane

Jun Iba

Taro Kato

Kazutoshi Torashima

Takehiko Soda

Shoji Kono

Shinichiro Shimizu

Yoshiaki Takada

Kouhei Hashimoto

Yusuke Yamashita

Daisuke Inoue

Shota Shigemori

An imaging device includes a pixel unit having a plurality of pixels forming a plurality of rows and a plurality of columns, and a readout unit that divides the pixel unit into a plurality of pixel blocks based on a division pattern, each pixel block including at least two pixels, and combines signals from the at least two pixels included in one pixel block to generate one signal for each of the pixel blocks. A detection unit detects a change in signal values between a plurality of signals sequentially generated by the readout unit of the one pixel block. A control unit controls the readout unit to output a signal individually from each of the pixels included in at least one pixel block in response to detecting a change in the signal values, and controls the readout unit so that the division patterns are different in at least two frames.

Imaging device, imaging system, and drive method of imaging device

An imaging apparatus includes a light receiving pixel, a first light shielded pixel, and a second light shielded pixel. The first light shielded pixel includes a first transfer transistor and the second light shielded pixel includes a second transfer transistor. Impurity concentration of a source of the first transfer transistor is lower than impurity concentration of a source of the second transfer transistor. The first light shielded pixel includes a first element isolation structure and the second light shielded pixel includes a second element isolation structure different from the first element isolation structure. An area of an interface between a semiconductor region and an insulator in the first light shielded pixel is different from an area of an interface between a semiconductor region and an interface in the second light shielded pixel.

Imaging apparatus and equipment

A photoelectric conversion apparatus includes first and second signal lines, first and second circuits, and a switch. Signals based on electric charges generated in first and second photoelectric conversion portions are to be read out to the first and second signal lines, respectively. The first circuit includes a first input unit to which the first signal line is connected. The first circuit is configured to perform processing of a signal input to the first input unit, with a first gain. The second circuit includes a second input unit to which the second signal line is connected. The second circuit is configured to perform processing of a signal input to the second input unit. The switch is configured to perform switching between a connected state and a disconnected state between the first signal line and the second signal line.

Photoelectric conversion apparatus, imaging system, and moving body

In an image pickup system according to an aspect of the present invention, a pixel portion includes a plurality of first pixel rows controlled by a scanning circuit such that charge accumulation periods are at least partially overlapped with each other and a plurality of second pixel rows controlled by the scanning circuit such that charge accumulation periods are not overlapped with the charge accumulation periods of the first pixel rows, part of the plurality of first pixel rows commonly uses a floating diffusion with a pixel in the second pixel row, another part of the plurality of first pixel rows does not commonly use the floating diffusion with the pixel in the second pixel row, and the signal processing unit performs signal processing without using a signal of the pixel in the first pixel row that commonly uses the floating diffusion with the pixel in the second row.

Image pickup system

A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

Solid-state image sensor and camera with pixel openings

A pixel portion includes a plurality of first pixel rows and a plurality of second pixel rows each being arranged so as to be adjacent to the first pixel row. Among the first pixel row and the second pixel row arranged so as to be adjacent to each other, during at least a part of a period from an end of the electric charge accumulation period in the second pixel row until an end of an output period in which signals from pixels in the first pixel row are output, electric charges accumulated in photoelectric conversion units of pixels in the second pixel row are reset.

Driving method for image pickup apparatus, and image pickup apparatus

Provided is an image pickup apparatus, including a plurality of microlenses, a plurality of image pickup rows being configured to output a signal for generating an image a distance measurement row being configured to output a focus detection signal a plurality of signal processing units, and a control unit. The control unit is configured to control the plurality of image pickup rows to perform a first operation of reading signals to the plurality of signal processing units; control, before or after the first operation, the distance measurement row to perform a second operation of reading signals to the plurality of signal processing units; control the plurality of signal processing units to be in an operating state in one of the first and second operations; and control a part of the plurality of signal processing units to be in an operation-restricted state in another of the first and second operations.

Image pickup apparatus, image pickup system, and method of driving image pickup apparatus

A semiconductor apparatus, comprising a decoder arranged in a path between a first power supply line and a second power supply line and configured to receive a signal and decode the signal, a switch portion arranged, in series with the decoder, in the path between the first power supply line and the second power supply line, and a control unit configured to set the switch portion in a conductive state so as to cause the decoder to decode the signal after the signal has changed from one of high level and low level to the other.

Semiconductor apparatus having a decoding function, method of controlling the same, and camera

The present invention provides a driving method for an image pickup apparatus that appropriately performs both readout of a signal of a reference pixel and mixing of mutual signals output by a plurality of effective pixels, and the present invention also provides an image pickup apparatus and an image pickup system.

Driving method for an image pickup apparatus, image pickup apparatus, and image pickup system

Provided is a solid-state imaging apparatus, including amplifier units including: an amplifier having a first input terminal, a second input terminal, and an output terminal; an input capacitor having one terminal to which an output signal from a pixel is input, and another terminal connected to the second input terminal of the amplifier; a feedback switch connected between the second input terminal and the output terminal of the amplifier; and a feedback capacitor connected in parallel with the feedback switch and between the second input terminal and the output terminal of the amplifier, in which a driving current of the amplifier during a first period is smaller than a driving current of the amplifier during a second period in which the amplifier amplifies the output signal from the pixel, and the feedback switch is set to a connection state during the first period.

Solid-state imaging apparatus and imaging system

A reflection type liquid crystal apparatus comprises a pixel electrode substrate carrying thereon a plurality of pixel electrodes, an opposite substrate disposed vis-a-vis said pixel electrodes and a liquid crystal material filling the gap between the substrates and adapted to display images by causing the pixel electrodes to reflect light entering from the opposite substrate. A reflection layer is arranged below a plurality of openings defined by the plurality of pixel electrodes to reflect light entering through the openings back to the openings.

Growing community of inventors

Fujisawa, Japan

Hiroo Akabori