Kokusai Electric Corporation

Hironori Shimada

Daigi Kamimura

Tomoshi Taniyama

Takayuki Nakada

Kenji Shirako

Akira Horii

Norihiro Yamashima

Shuhei Saido

Takafumi Sasaki

A substrate processing apparatus includes: a processing module including a process container in which at least one substrate is processed and a substrate loading port installed at a front side of the processing module, a utility system including a supply system which supplies a processing gas into the first process container and a surface of the first utility system is connected or arranged close to a rear surface of the processing module; a vacuum-exhauster behind the processing module and configured to exhaust an inside of the process container; an exhaust pipe that brings the process container into fluid communication with the vacuum-exhauster; a pipe housing which supports the exhaust pipe; and a first vibration-damping fastener connecting the vacuum-exhauster and the pipe housing. The exhaust pipe includes a first flexible portion that allows displacement of the exhaust pipe's end, and the vacuum-exhauster and pipe housing are installed at a floor.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique capable of shortening a temperature stabilization time in a process chamber by improving a heat insulation performance of a lower portion of the process chamber. A heat insulation structure is arranged in a vicinity of a furnace opening of a heat treatment furnace wherein a temperature gradient is formed at the vicinity of the furnace opening. The heat insulation structure includes a plurality of heat insulation plates with predetermined gaps therebetween. Each heat insulation plate includes a heat shield made of metal; and a seal made of quartz or ceramics and configured to cover a front surface and a rear surface of the heat shield. The heat shield is arranged in a vacuum cavity provided in the seal.

Heat insulation structure, substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Nozzle holder of substrate processing apparatus

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

Substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

Growing community of inventors

Toyama, Japan

Hironori Shimada