Fujitsu Corporation

Technical Research & Development Institute Ministry of Defense of Japan

Hironori Nishino

Yusuke Matsukura

Yasuhito Uchiyama

Akira Sawada

Tetsuo Saito

Ryo Suzuki

Satoshi Murakami

Yoichiro Sakachi

Kenji Maruyama

Daiyu Kondo

Shintaro Sato

Junichi Kon

Toshio Fujii

Yasuo Matsumiya

Kenjiro Hayashi

Hiroyasu Yamashita

Michiya Kibe

Mitsuhiro Nagashima

Hitoshi Tanaka

Yoshihiro Miyamoto

Nobuyuki Kajihara

Koji Tsunoda

Mitsunori Yokoyama

Toshihiro Okamura

Yuta Miwa

Makoto Yamaguchi

Tohru Okamoto

Minoru Doshida

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

Photo detection element, optical sensor, and method of manufacturing photo detection element

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Infrared detector, imaging device including the same, and manufacturing method for infrared detector

An apparatus for infrared detection includes: an infrared detection element array that includes an array of a plurality of pixels, the array of the plurality of pixels being configured such that a first pixel and a second pixel are repeatedly arranged in a predetermined arrangement pattern, the first pixel being a pixel configured to respond to infrared light of a first wavelength, the second pixel being a pixel configured to respond to a second wavelength different from the first wavelength; and a readout circuit configured to be coupled to the infrared detection element array, wherein the first pixel is configured to be coupled to the readout circuit via a first connection electrode, and wherein the second pixel is configured to be coupled to the readout circuit via a second connection electrode, the second connection electrode being an electrode having a height different from that of the first connection electrode.

Infrared detector, infrared imaging apparatus using the same, and controlling method of infrared detector

An imaging apparatus includes an image sensor including a common sensor element, the common sensor element having a plurality of output systems therefrom, and a signal processing circuit that generates an image signal from outputs of the image sensor, wherein the plurality of output systems individually include a transistor, a capacitor that stores charge in accordance with a current flowing through the sensor element via the transistor, and output circuitry that outputs a sensor signal in accordance with a voltage of the capacitor, wherein the transistors individually allow the current to flow in time periods different with each other, and the signal processing circuit does not use the sensor signals if the sensor signals do not match with each other, and the signal processing circuit uses the sensor signals for generating the image signal if the sensor signals match with each other.

Imaging apparatus

An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.

Infrared detector, imaging device, and imaging system

A signal output circuit includes a transistor includes a source that is coupled to a light receiving element and a gate of which electric potential is fixed, a first switch circuit capable of fixing a potential of the source to a reference potential, a second switch circuit coupled to a drain of the transistor, a third switch circuit coupled to the drain, a first capacitor coupled to the drain via the second switch circuit and coupled to the drain via the third switch circuit, wherein a first voltage according to a first current flowing through the transistor via the second switch circuit occurs, and a second voltage according to a second current flowing through the transistor via the third switch circuit occurs, and an output circuit that outputs a first signal corresponding to the first voltage and a second signal corresponding to the second voltage.

Signal output circuit, image sensor, and imaging apparatus

A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.

Photodetector and imaging device

A heat source detection device includes a processor configured to calculate, as a single-wavelength temperature, one of a first temperature obtained by converting a first output output from the infrared sensor in accordance with an incident amount of infrared rays in a first infrared wavelength band into a temperature, a second temperature obtained by converting a second output from the infrared sensor in accordance with an incident amount of infrared rays in a second infrared wavelength band into a temperature and an average value of the first and second temperatures, and calculate a dual-wavelength temperature obtained by converting the ratio between the first and second outputs into a temperature; and to determine a temperature of the heat source based on the dual-wavelength temperature and determine a distance to the heat source from the infrared sensor based on a comparison result between the single-wavelength temperature and dual-wavelength temperature.

Heat source detection device and heat source detection method

An information processing device comprising a processor that selects, from among a plurality of data processing section that subject data blocks to a predetermined process, a data processing section to which a first data block group with first identification information based on the data blocks is allocated, and divides, when a workload placed on the data processing section exceeds a first threshold, the first data block group allocated to the data processing section into a plurality of second data block groups with second identification information based on the data blocks, and selects, from among the plurality of data processing sections, data processing sections to which the plurality of second data block groups are allocated.

Information processing device and method

An A/D converter device includes a zone identifying circuit configured to identify which one of a plurality of level zones a voltage level of an analog output signal is in; a shift voltage generating circuit configured to generate a shift voltage which corresponds to a relevant one of the level zones; an operational amplifier circuit configured to change the analog output signal by means of the shift voltage, the operational amplifier circuit being configured to amplify the changed analog output signal to suit an A/D conversion input range so as to generate an amplified and shifted analog signal; a first A/D converter circuit configured to A/D-convert the amplified and shifted analog signal so as to calculate a first A/D converted value; and a second A/D converted value calculating circuit configured to calculate a second A/D converted value from the first A/D converted value in accordance with the relevant level zone.

Imaging device, A/D converter device and reading circuit

An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer, and an upper electrode layerformed over the infrared absorption layer. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

Optical semiconductor device with quantum dots having configurational anisotropy

An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

Infrared photodetector

A signal reading method successively outputs a read signal by scanning a voltage value of an integrating capacitor in an image sensor in which a plurality of sensor parts are arranged in a two-dimensional array made up of rows and columns and each sensor part includes the integrating capacitor accumulating a charge obtained by integrating a photocurrent output from a sensor. A first integration of the photocurrent using the integrating capacitor and a first sampling and holding using a sample and hold capacitor are performed in a first time interval, during a time of one frame made up of the first through third time intervals. A second integration of the photocurrent using the integrating capacitor is performed in the second time interval, and processes in the first and second time intervals are performed in common with respect to all of the sensor parts simultaneously. A vertical scan is started by selecting the row in an order starting from a first row.

Signal reading method, signal reading circuit, and image sensor

A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor layer formed between one first conductive type contact layer and a first quantum dot layer which is closest to the one first conductive type contact layer so that it results in a barrier against a carrier positioned at the one first conductive contact layer.

Growing community of inventors

Kawasaki, Japan

Hironori Nishino