Rohm Co., Ltd.

Hironori Nakahara

Isao Yamamoto

Yoichi Tamegai

Sachito Horiuchi

Yoshinori Imanaka

Kyoichiro Araki

Ichiro Yokomizo

A first protection circuit includes a first diode and a first transistor. The anode of the first diode is connected to a terminal to be protected. The first transistor is configured as an N-channel MOSFET, and arranged such that the first terminal of the conduction channel thereof is connected to the cathode of the first diode, and the second terminal of the conduction channel thereof, and the gate and the back gate thereof are connected to a fixed voltage terminal. The first transistor is configured as a floating MOSFET formed within an N-type well formed in a P-type semiconductor substrate. The first diode is formed in the shared N-type well in which the first transistor is formed. The cathode of the first diode and the first terminal of the conduction channel of the first transistor are connected to the N-type well.

Protection circuit

An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state.

Analog switch for signal swinging between positive and negative voltages

A control circuitaccording to the present invention transits to a first current limiter mode when an output current of a DC-DC converter circuit reaches an upper limit current or greater in a normal mode; transits to the normal mode when the output current falls below the upper limit current in the first current limiter mode; transits to a second current limiter mode when a first predetermined period elapses without a transition to the normal mode in the first current limiter mode; and transits to the normal mode when a second predetermined period elapses in the second current limiter mode.

Power control circuit to prevent a malfunction of a protection circuit

A first transistor is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a first terminal of the conduction channel, the gate, and the back gate thereof connected to a terminal to be protected. A second transistor is an N-channel MOSFET with a first channel of the conduction channel, the gate, and the back gate thereof connected to a fixed voltage terminal, and with a second terminal of the conduction channel thereof connected to the second terminal of the conduction channel of the first transistor. The first transistor and the second transistor are floating MOSFETs formed in a common N-type well formed in a P-type semiconductor substrate, and are provided in the form of separate devices. A common connection node which connects the first transistor and the second transistor is connected to an N-type well for device separation.

A selector circuit outputs one of a first input voltage or a second input voltage via an output terminal. A first transistor and a second transistor are provided in series between a first input terminal and the output terminal. A third transistor and a fourth transistor are provided in series between a second input terminal and the output terminal. A control unit controls the ON/OFF operations of the first transistor through the fourth transistor. The back gates of the first transistor and the second transistor are connected such that at least one body diode of the first transistor Mand at least one body diode of the second transistor are arranged in opposing directions. The back gates of the third transistor and the fourth transistor are connected in the same way.

Growing community of inventors

Kyoto, Japan

Hironori Nakahara