Wako Pure Chemical Industries, Inc.

Fujifilm Wako Pure Chemical Corporation

Hironori Mizuta

Ichiro Hayashida

Masahiko Kakizawa

Kuniaki Okamoto

Kazuhiko Sato

Tsuneaki Maesawa

Tsutomu Watahiki

Nobutaka Shimamura

Takahiro Kiyosu

Goro Mori

Kohei Hayashi

Osamu Matsuda

Takatoshi Matsuura

Hiromi Watahiki

Takuhiro Kimura

Kazuki Takimoto

Takayuki Kajikawa

Kaho Sugimoto

Takehisa Kato

Mayumi Kimura

Hiromi Kawada

An object of the present invention is to provide an excellent binder agent composition solving problems such as the decrease in a charge/discharge capacity that occurs in a case where a silicon-containing active material is used, a slurry composition and an electrode in which the binder agent composition is used, and a method for preparing the electrode. The present invention relates to 'a binder agent composition containing (A) one or more kinds of polymers containing polyacrylic acid, (B) a bivalent to decavalent alcohol, and (C) water', 'a slurry composition for lithium batteries, containing 1) a silicon-containing active material, 2) a conductive assistant, and 3) the binder agent composition', &#x201c;an electrode for lithium batteries that has 1) a silicon-containing active material, 2) a conductive assistant, 3) a binder agent derived from the binder agent composition, and 4) a current collector&#x201d;, and &#x201c;a method for preparing an electrode for lithium batteries, including coating a current collector with the slurry composition and drying the slurry composition after the coating&#x201d;.

Binder agent composition for lithium battery

It is an object of the present invention to provide an electrolytic solution having high oxidation decomposition potential, where dissolution and deposition of magnesium proceed repeatedly and stably, using a non-nucleophilic alkoxide-type magnesium salt. The present invention relates to  

Magnesium-containing electrolytic solution

The present invention relates to a cleaning agent for a semiconductor substrate having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film to be used in a post-process of a chemical mechanical polishing process, comprising (A) an organic acid represented by general formula described in the present specification, (B) amines selected from the group consisting of (B-1) diamines, (B-2) amidines, (B-3) azoles, and (B-4) pyrazines or pyrimidines, represented by general formulae described in the present specification, (C) a hydroxylamine derivative, and (D) an oxygen scavenger represented by general formula described in the present specification, and being an aqueous solution having a pH of 10 or higher; and a processing method for the surface of a semiconductor substrate, having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film, which comprises using the cleaning agent.

Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein Rrepresents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; Rrepresents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).

Processing agent composition for semiconductor surface and method for processing semiconductor surface using same

The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Resist remover composition and method for removing resist using the composition

The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor&#x2014;Cu film, in particular, a Cu-BTA film. The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.

Cleaning agent for substrate and cleaning method

An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.

Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition

The present invention relates to a liquid cleaner for a semiconductor substrate on which metal wiring may be provided, comprising each component of a chelating agent or a salt thereof shown by the following general formula (1), an alkaline compound and pure water, wherein pH is 8 to 13: (wherein, Yand Yare lower alkylene groups, n is an integer of 0 to 4, at least 4 of Rto Rand n Rs are alkyl groups having phosphonic acid group(s) and the rest are alkyl groups) and a cleaning method using the same. The present invention provides a liquid cleaner which can efficiently remove fine particles or impurities derived from various metals at semiconductor substrate surface, even when used after a process adopting an alkaline polishing agent or alkaline etching liquid, without generating problems of causing difficult-to-remove gelled particles at the substrate surface or easy generation of rough semiconductor substrate surface, and a cleaning method using the same.

Cleaning composition and method of cleaning therewith

A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiOof the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.

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Saitama, Japan

Hironori Mizuta