Other

Sharp Kabushiki Kaisha Corporation

Hironori Matsumoto

Toshinori Ohmi

Tadao Takeda

Hiroshi Ban

Akihiko Nakano

Hideyuki Unno

Eiji Yanagawa

An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single silicon substrate, wherein a Schottky barrier, which is a component of the Schottky barrier diode, is made of a silicide layer.

Integrated semiconductor circuit device having Schottky barrier diode

In the present semiconductor device, a chip with an LSI circuit is secured to a board (with the chip flipped) so as to be level. The LSI circuit on the chip is specified to operate normally only when the chip is level. Further, the back of the chip is processed so as to give stress to the chip. The chip has a reduced thickness of 50 &mgr;m or less (alternatively 30 &mgr;m to 50 &mgr;m). Therefore, when the chip is detached from the board, it deforms and is no longer level due to the stress, which prohibits the LSI circuit from operating normally. This way, the present semiconductor device ensures that no analysis can be conducted on the LSI circuit once the chip is detached.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate having a main circuit part including a predetermined active element and the like on a silicon substrate, an interconnection transmitting to the active element an externally supplied input signal or transmitting an output signal to be supplied to any external unit, an opening for input/output of the externally supplied signal or the signal to be supplied to any external unit to and from the interconnection, an insulating protection film for protecting the interconnection and an underlying portion thereof, a conductive metal film arranged above the main circuit part, and an aluminum oxide film arranged to cover the conductive metal film. This structure can preclude the main circuit part from being discerned by visual observation, a visible light microscope and an IR microscope, and accordingly imitation, copy and altering of the main circuit part by other people can be prevented.

Semiconductor device with analysis prevention feature

A semiconductor device includes, on a protective film laminated on a circuit principal part, (i) a light blocking film provided so as to cover the circuit principal part, (ii) an aluminum oxide film provided so as to completely cover the light blocking film, and (iii) a light-blocking upper wiring provided on the aluminum oxide film. An attempt to exfoliate the light blocking film or the light blocking upper wiring causes the resistance-detection-use upper wiring to break or thin, thereby resulting in an increase in the resistance of the resistance-detection-use wiring. The increase in the resistance is detected by the resistance detecting circuit part, and malfunction or inoperativeness of the circuit principal part is caused in response of detection. By so doing, the circuit principal part can be protected from analysis.

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Nara, Japan

Hironori Matsumoto