Ntt Docomo, Inc.

Kabushiki Kaisha Toshiba

Mitsubishi Chemical Corporation

Super Wave Corporation

Hironori Ishikawa

Yoshito Kawakyu

Masao Mashita

Hideki Sato

Koichiro Iida

Masayoshi Yabe

Kazuki Okabe

Tomoyuki Ogata

Masahiro Sasaki

Asato Tanaka

Mitsuru Tanamura

Yuichiro Kawamura

Sadaatsu Kato

Kenichi Miyamoto

Toyoki Sasakura

Koichi Asano

Mitsuru Murata

Hisao Hori

Yuuki Asahi

Yuji Tamiya

Yoshinori Matsushima

Ryuji Nishi

Yuichiro Mitsubishi Chemical Group Scien Kawamura

A terminal acquires measurement values from a plurality of sensors that sense a measurement target with measurement levels set therein and controls the sensors. The terminal includes: an acquisition unit configured to acquire the measurement values from the sensors; a measurement value determination unit configured to determine whether a first measurement value acquired from a first sensor among the sensors exceeds a predetermined threshold; a validity determination unit configured to determine validity of the first measurement value on the basis of measurement values acquired from other sensors when it is determined that the first measurement value exceeds the predetermined threshold; a measurement level determination unit configured to determine that the measurement level of the first sensor is to be raised when it is determined that the first measurement value is valid; and an instruction unit configured to transmit instruction information for changing the measurement level of the first sensor.

Detection device

An information communication terminal includes; a reception unit configured to receive setting values of notification setting for plural connected peripheral devices; a peripheral device setting storage unit configured to store the received setting values of notification setting for the plural peripheral devices; a service application setting storage unit configured to store setting values of notification setting from a service application to the plural connected peripheral devices by using the setting values stored in the peripheral device setting storage unit as initial values; a control unit configured to assign a setting value of notification setting to transmission data on the basis of a setting value stored in the service application setting storage unit when the transmission data are received from the service application; and a transmission unit configured to transmit the transmission data to which the setting value of notification setting is assigned to at least one peripheral device.

Information communication terminal, peripheral device cooperation method, and program

A composition for an organic electroluminescent device is a composition for forming an organic light emitting layer of an organic electroluminescent device by wet coating process. The composition contains a phosphorescent material, a charge transport material, and a solvent, in which the phosphorescent material and the charge transport material are each an unpolymerized organic compound, and the first oxidation potential of the phosphorescent material E, the first reduction potential of the phosphorescent material E, the first oxidation potential of the charge transporting material E, and the first reduction potential of the charge transporting material Esatisfy the following condition: E+0.1&#x2266;E&#x3c;E&#x2266;E&#x2212;0.1 or E+0.1&#x2266;E&#x3c;E&#x2266;E&#x2212;0.1.

Organic electric field light emitting element and production therefor

A mobile communication terminal performs: registering a length of time starting at a time when an identifier of a base station is detected by a first communication unit, the identifier being transmitted by the base station accommodated in a first communication network, and ending at a time when the first communication unit accesses an access point accommodated in a second communication network in association with the identifier, the access point having an accessible range smaller than that of an accessible range of the base station; and starting, at the second first communication unit, a search for access information transmitted by the access point when a reference time determined based on a length of time associated with the registered identifier has passed a time when the identifier is detected, in a case where the identifier detected by the first communication unit is stored.

Mobile communication terminal, server apparatus, controlling system, controlling method, and program

Non-reception-controlled area information is stored in the non-reception-controlled area storage section of the reception control device for each mobile device ID. When the reception control device receives the disconnection signal and position information from the mobile device in accordance with the mobile device moving away from the key terminal, the presence/absence determination section determines whether or not the mobile device is within the aforementioned area. As a result of the determination, if the current position of the mobile device is within the aforementioned area, control for enabling reception for the mobile device is performed, and if the current position is outside the aforementioned area, control for disabling reception for the mobile device is performed.

Function-limiting device and function-limiting method

Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.

Method of manufacturing III-V group compound semiconductor

Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement); Chamber 2: H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 ; Chamber 3: AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement); Chamber 4: H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2.

Method for producing compound semiconductors and apparatus therefor

A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.

Vapor-phase epitaxial growth method for semiconductor crystal layers

Growing community of inventors

Yokohama, Japan

Hironori Ishikawa