Kaneka Corporation

Hironori Hayakawa

Takashi Kuchiyama

Kenji Yamamoto

Hiroaki Ueda

Shinya Omoto

Yuji Motohara

Takahisa Fujimoto

Tooru Irie

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Substrate with transparent electrode and method for producing same

A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nmor more and the number of the continuous regions is 50/&#x3bc;mor more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

Substrate with transparent electrode and method for manufacturing same

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

A transparent electrode-equipped substrate includes a metal oxide transparent electrode layer on a transparent substrate. The average maximum curvature Ssc of the surface of the transparent electrode layer is preferably 5.4&#xd7;10nmor less. For example, if the transparent electrode layer is subjected to a surface treatment by low discharge-power sputtering after deposition, the Ssc of the transparent electrode layer can be reduced. This transparent electrode-equipped substrate excels in close adhesion between the transparent electrode layer and a lead-out wiring line disposed on the transparent electrode layer. The transparent electrode layer is obtained by, for example, performing a transparent electrode deposition step of through the application of a first discharge power and then performing a surface treatment step through the application of a second discharge power.

Transparent electrode-equipped substrate and method for producing transparent electrode-equipped substrate

A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688&#xd7;Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3&#xd7;10&#x3a9;cm.

Method for producing substrate with transparent electrode, and substrate with transparent electrode

A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nmor more and the number of the continuous regions is 50/&#x3bc;mor more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. In another embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

A transparent electroconductive film includes a transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy Eof tin 3dand a bond energy Eof indium 3das determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies Eand Eis present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference E&#x2212;E; and a difference E&#x2212;Ebetween the maximum value Eand the minimum value Eof the bond energy difference is 0.1 eV or more.

Transparent conductive film and method for producing same

Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 &#x3bc;m or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2&#x3b8; of the (111) plane of the second metal layer is less than 43.400&#xb0; as measured using a CuK&#x3b1; ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.

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Otsu, Japan

Hironori Hayakawa