Kabushiki Kaisha Toshiba

Other

Yokohama National University

Kabushiki Kaishi Toshiba

Hironori Asai

Yumi Fukuda

Ryosuke Hiramatsu

Masaaki Tamatani

Katsutoshi Komeya

Keiichi Yano

Toru Wakihara

Junichi Tatami

Naotoshi Matsuda

Keiko Albessard

Koji Suzuki

Hideki Sato

Masahiko Yamamoto

Nobuyuki Mizunoya

Mitsuyoshi Endo

Kaoru Koiwa

Kazuo Anzai

Jun Monma

Tsuyoshi Hatano

Jun-ichi Tatami

Shinya Nunoue

Shinji Saito

Masahiro Kato

Yasushi Hattori

Shigeya Kimura

Koji Yamakawa

Takahiro Sato

Rei Hashimoto

Iwao Mitsuishi

Mizunori Ezaki

Aoi Okada

Nobuo Iwase

Kazuo Kimura

Kiyoshi Iyogi

Kunio Ishida

Yasuyuki Sugiura

Kazuaki Ootsuka

Yoshitoshi Sato

Yoshiki Ishizuka

Tohru Wakihara

Hirohisa Osoguchi

Shoko Abe

According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of SrSiAlON. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008&#x2266;M/(M+M)&#x2266;0.114, where Mis a number of moles of Ca and Mis a number of moles of Sr.

Luminescent material

A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1&#x2266;p&#x2266;n and 2&#x2266;n) of 1.59&#x2266;Ap&#x2266;3.26 and a full width at half maximum Fp (eV) (where 1&#x2266;p&#x2266;n and 2&#x2266;n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1&#x2266;q&#x2266;m and 2&#x2266;m&#x2266;n), and the m photoelectric conversion layers each satisfy the relationship of Ap&#x2212;Fp&#x3c;Bq&#x2266;Ap with respect to any one of the n light emission peaks.

Photoelectric conversion element, photoelectric conversion system, and method for production of photoelectric conversion element

The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element Mother than the metal element M, a tetravalent element Mother than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as SrAlSiON, but the chemical bond lengths of M-N and M-N are within the range of &#xb1;15% based on those of Al&#x2014;N and Si&#x2014;N calculated from the lattice constants and atomic coordinates of SrAlSiON, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

Fluorescent substance and light-emitting device employing the same

Provided is a fluorescent substance excellent in quantum efficiency and in temperature characteristics, and a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element Mother than the metal element M, a tetravalent element Mother than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as SrAlSiON, but the chemical bond lengths of M-N and M-N are within the range of &#xb1;15% based on those of Al&#x2014;N and Si&#x2014;N calculated from the lattice constants and atomic coordinates of SrAlSiON, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2):(MR)AlSiON&#x2003;&#x2003;(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships:

Luminescent material and light-emitting device

A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2):(MR)AlSiON&#x2003;&#x2003;(2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships:0&#x3c;x&#x2266;1, 0.93&#x3c;a2&#x3c;1.3, 4.0&#x3c;b2&#x3c;5.80.6&#x3c;c2&#x3c;1, 6&#x3c;d2&#x3c;11).

A luminescent material is provided, which includes a carbide oxynitride-based compound having a composition represented by formula 1:(MR)AlSiONC&#x2003;&#x2003;formula 1wherein M is at least one metal element excluding Si and Al, and R is a luminescent central element. w, u, x, v, z, t and y satisfy following relationships:0.001&#x3c;w&#x3c;0.5; 0.66&#x2266;u&#x2266;1; 0.07&#x2266;x&#x2266;0.73;0.06&#x2266;v&#x2266;0.84; 0.04&#x2266;z&#x2266;0.44; 2.7&#x2266;t&#x2266;3.1; and0.019&#x2266;y&#x2266;0.13.

A fluorescent substance is provided, with includes a matrix composed of a compound having an AlN polytypoid structure represented by the following general formula (1), and a luminescence center element:(Al,M)(N,X)&#x2003;&#x2003;(1)

Fluorescent substance and light-emitting device

A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm.

There is provided an electron emitting device including a substrate, a pair of electrodes formed on the substrate and being apart from each other, a pair of electrically conductive films formed on the electrodes, respectively, and being apart from each other, a distance between the electrically conductive films being shorter than a distance between the electrodes, and an electron emitting film formed between the electrically conductive films, the electron emitting film containing boron and at least one of carbon and nitrogen.

Electron emitting device and method of manufacturing the same

A field emission device essentially consists of three electrodes, and comprises a cathode on the surface of which an emissive material is formed, a gate electrode formed on an insulation layer formed to upwardly surround the cathode, and having an opening for passing electrons emitted from the emissive material, and an anode for accelerating the electrons passing through the opening, wherein L/S is one or above, where S represents an aperture diameter of the opening, and L represents a typical shortest distance that the electrons emitted from the emissive material take to pass through the insulation layer surrounding the cathode. Based on this structure, it is possible to provide a field emission device that can control the orbit of emitted electrons while employing a simple three-electrode structure.

Field emission device

Disclosed is a semiconductor package having: a semiconductor chip; a package substrate; a wire connected to the semiconductor chip; and an electric connection member formed on the package substrate to electrically connect the wire to a printed board when the package substrate is mounted on the printed board. One surface of the package substrate has a first area in which the semiconductor chip is mounted and a second area in which the wire are arranged, and the other surface has a third area which is located in the rear of the second area and in which the electric connection member connects the wire to the printed board and a fourth area which is located in the rear of the first area. A heat-transfer member is provided in the fourth area and transmits heat generated by the semiconductor chip to the printed board through the package substrate.

Heat transfer configuration for a semiconductor device

A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.

Semiconductor device having a tab chip on a tape carrier with lead

Growing community of inventors

Yokohama, Japan

Hironori Asai