Semiconductor Energy Laboratory Co., Ltd.

Hironobu Shoji

Shunpei Yamazaki

Yoshiaki Oikawa

Masataka Nakada

Shingo Eguchi

Mitsuo Mashiyama

Masatoshi Kataniwa

Koichiro Tanaka

Ikuko Kawamata

Shinji Maekawa

Satoshi Seo

Akihisa Shimomura

Osamu Nakamura

Hidekazu Miyairi

Hideto Ohnuma

Yasuhiro Jinbo

Tatsuya Honda

Gen Fujii

Yukie Suzuki

Junya Maruyama

Kiyoshi Kato

Yasuyuki Arai

Yutaka Shionoiri

Kensuke Yoshizumi

Tomoaki Moriwaka

Tomoyuki Aoki

Masafumi Morisue

Masaki Koyama

Eiji Higa

Kouji Dairiki

Hideaki Kuwabara

Mikio Yukawa

Hirotada Oishi

An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Light emitting device and electronic device

Flexible light emitting device comprising a polyimide resin

Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device

Light emitting device that is highly reliable, thin and is not damaged by external local pressure and electronic device

Light emitting device and electronic device having an embedded pixel electrode

It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

Method for manufacturing SOI substrate and semiconductor device

When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.

Method for manufacturing display device

A technique for peeling an element manufactured through a process at relatively low temperature (lower than 500&#xb0; C.) from a substrate and transferring the element to a flexible substrate (typically, a plastic film). With the use of an existing manufacturing device for a large glass substrate, a molybdenum film (Mo film) is formed over a glass substrate, an oxide film is formed over the molybdenum film, and an element is formed over the oxide film through a process at relatively low temperature (lower than 500&#xb0; C.). Then, the element is peeled from the glass substrate and transferred to a flexible substrate.

Method for manufacturing a semiconductor device using a flexible substrate

Display device having a fibrous encapsulating structure

A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

Method of manufacturing semiconductor device

To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

Method for shielding semiconductor device

When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

Method for manufacturing display device with electrode having frame shape

Light emitting device and electronic device utilizing fibrous barrier layers impregnated with organic resin

Growing community of inventors

Tokyo, Japan

Hironobu Shoji