Rohm Co., Ltd.

Hironobu Sai

Haruo Tanaka

Jun Ichihara

A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as AlGaInN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1). The semiconductor light-emitting device includes: a substrate made of SiC; a semiconductor layer which is placed above the substrate and has a light-emitting region; a multi-layered reflective layer which is placed between the substrate and the semiconductor layer and which reflects light produced in the light-emitting region; and a phase matching layer which is placed between the substrate and the multi-layered reflective layer and which reflects light produced in the light-emitting region and matches a phase of light reflected from a lower boundary surface of the multi-layered reflective layer and a phase of light reflected from a lower boundary surface of the substrate among light produced in the light-emitting region. A thickness of the phase matching layer is set so that a quantity of interfering light produced by the interference of light reflected from the lower boundary surface of the multi-layered reflective layer, light reflected from a lower boundary surface of the phase matching layer, and light reflected from the lower boundary surface of the substrate among light produced in the light-emitting region is locally maximized when the substrate has a predetermined thickness.

Semiconductor light-emitting device

A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable material to an oxide layer and forming a third layer made of compound semiconductor that constitutes a semiconductor element on the second layer.

Method of fabricating a compound semiconductor layer

A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation.

Method of manufacturing semiconductor light emitting device and oxidation furnace

A lower multilayer reflection film (), a light emitting layer forming portion () and an upper multilayer reflection film () are sequentially formed on a substrate () to form a semiconductor laminated portion (), and a current injection region A is formed at a part of the semiconductor laminated portion so as to emit light from the surface in the center thereof. And, according to the present invention, the current injection region A is formed so as to be deflected from a center of the substrate. As a result, there is provided a surface light emitting type semiconductor laser capable of monitoring a light emitting power correctly and controlling it automatically in order to achieve the constant light emitting power in a case where the surface light emitting type laser chip is used as a light source for a pickup or the like.

Surface light emitting type semiconductor laser having a vertical cavity

On a semiconductor substrate ( ), a double hetero structure portion ( ) in which an active layer ( ) having smaller band gap is sandwiched between semiconductor layers ( ) having larger band gap than that of the active layer ( ) is formed. A light reflection film ( ) is formed at least a part of side walls of the double hetero structure portion ( ). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.

Semiconductor light emitting device and manufacturing method thereof

It is an object of the present invention to provide a surface light-emitting device that can realize a lightweight and compact-profile optical input/output device with reasonable price, especially the one that emits light. The beam generator comprises a surface light-emitting device having a stacked-layer formed of a cathode , a luminescent layer made of organic material(s) and an anode in that order, the stacked-layer being located adjacent to a glass substrate . The anode is a transparent electrode that is formed to correspond to a hologram pattern of a condensing lens. When a DC voltage is applied between the cathode and the anode with the DC power source, the luminescent layer illuminate corresponding to the hologram pattern of the condensing lens, and the light will converge to a focal point of the condensing lens. Therefore, the surface light-emitting device can play the both roles of the light source and the condensing lens. Thus, the use of this surface light-emitting device permits realization of a lightweight and compact-profile beam generator with reasonable price.

Growing community of inventors

Kyoto, Japan

Hironobu Sai