Nikon Corporation

Texas Instruments Corporation

Hironobu Murata

Masahiro Suzuki

Shiro Tsunai

Koyu Yamanoi

Takashi Kuriyama

Toshio Yamauchi

Takashi Aoe

Tetsuya Konishi

Osamu Hosokawa

Aoe Takashi

An imaging element includes: an imaging unit in which a plurality of pixel groups including a plurality of pixels that output pixel signals according to incident light are formed, and on which incident light corresponding to mutually different pieces of image information is incident; a control unit that controls, for each of the pixel groups, a period of accumulating in the plurality of pixels included in the pixel group; and a readout unit that is provided to each of the pixel groups, and reads out the pixel signals from the plurality of pixels included in the pixel group.

Image pickup element and image pickup device

An image sensor includes: a plurality of microlenses arranged in a two-dimensional pattern; and a plurality of pixels that are provided in correspondence to each of the microlenses and receive lights of different color components, respectively. Pixels that are provided at adjacent microlenses among the microlenses and that receive lights of same color components, are adjacently arranged.

Image sensor and image-capturing device

A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.

Solid-state imaging device and electronic camera

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

Backside illumination image sensor, manufacturing method thereof and image-capturing device

An imaging element comprising: an imaging unit that has: a plurality of groups each including at least one pixel; and a plurality of signal readout units that are each provided to each of the groups and read out a signal from the pixel; and a control unit that controls the signal readout unit in at least one group among the plurality of groups is provided. Each of the plurality of groups may include a plurality of the pixels. The control unit may select at least one group among the plurality of groups and control the signal readout unit by using a control parameter that is different from a control parameter that is used for another group among the plurality of groups.

Imaging sensor including an output line connected to each of a plurality of pixels arranged side-by-side in each of a row direction and a column direction

An imaging sensor comprising: an imaging chip in which a plurality of pixel are arranged in a matrix; and a signal processing chip that is each provided for one or more pixel columns or one or more pixel rows, has a device that performs signal processing on a pixel signal output from a pixel, and is stacked with the imaging chip is provided. For example, the device that performs signal processing is an A/D converter that converts a pixel signal output from the pixel into a digital signal, and when a pixel signal output from the pixel is converted into a digital signal, at least two or more A/D converters among the A/D converters are controlled in parallel.

Imaging sensor and imaging device with column ADC

An imaging device having a first surface on which light is incident and a second surface on an opposite side of the first surface, includes a photoelectric conversion section including semiconductors having a same conductivity type, in which an impurity concentration on the second surface side is higher than an impurity concentration on the first surface side.

Imaging device and imaging unit

An image sensor is provided, the image sensor including: an imaging unit that has a first imaging region and a second imaging region, and outputs: a first pixel signal generated according to light incident on the first imaging region; and a second pixel signal generated according to light incident on the second imaging region; a first ramp generating unit that generates a first ramp signal; a second ramp generating unit that generates a second ramp signal; a first signal converting unit that converts the first pixel signal into a first digital image signal based on a result of comparison between the first pixel signal and the first ramp signal; and a second signal converting unit that converts the second pixel signal into a second digital image signal based on a result of comparison between the second pixel signal and the second ramp signal.

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Yokohama, Japan

Hironobu Murata