Nitto-denko Corporation

Hironobu Machinaga

Kazuto Yamagata

Takehiro Ui

Hiroichi Ukei

Kazuaki Sasa

Eri Ueda

Manami Kurose

Yuuki Takeda

Yusuke Yamamoto

Yosuke Nakanishi

Naoki Nagaoka

Daisuke Nakamura

Toshihiro Tsurusawa

Motoki Haishi

Hajime Nishio

Taketo Ishikawa

Xiaolei Chen

Tomotake Nashiki

Daiki Kato

Yuya Kitagawa

Rie Hayashiuchi

Kyotaro Yamada

Masaharu Arimoto

Tsukasa Miyazaki

Takeshi Tanaka

Yutaka Ohmori

Nozomi Fujino

Takahiro Shimizu

Takahiro Nakai

Masato Katsuda

Taichi Watanabe

Shu Sasaki

Tomoya Matsuda

Yuka Yamazaki

Yoko Muraoka

Takahiko Yanagitani

Yuki Takeda

Rie Kawakami

Tetsuro Hori

Ryosuke Aoki

Sho Shibahara

Kazuaki Sassa

The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

Layered structure, piezoelectric device using the same, and method of manufacturing piezoelectric device

A transparent conductive film () includes a polycrystal (). The polycrystal () has grains (). The grains () have an average value Df of a maximum Feret diameter of 160 to 400 nm.

Transparent conductive film, laminate, and method for producing transparent conductive film

A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Piezoelectric device and method of manufacturing the same

A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.

Piezoelectric device and method of manufacturing piezoelectric device

For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

An impedance matching filmincludes a metallic element and a non-metallic element. The impedance matching filmhas a thickness of 10 to 200 nm. The impedance matching filmhas a sheet resistance of 200 Ω/□ or more. In the impedance matching film, the content of an oxygen atom is less than 50% in terms of the number of atoms.

Impedance matching film for radio wave absorber, impedance matching film-attached film for radio wave absorber, radio wave absorber, and laminate for radio wave absorber

An impedance matching filmincludes a mixture containing indium oxide and tin oxide and being a main component of the impedance matching film, the mixture having an amorphous structure. The impedance matching filmfor impedance matching has a Hall mobility of 5 cm/(V·s) or more. The impedance matching filmhas a thickness of 16 nm or more and less than 100 nm.

A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Heat-ray-transmission-controllable, light-transmissive base material and light-transmissive base material unit

A radio wave absorber () includes a resistive layer (), an electrical conductor (), and a dielectric layer (). The resistive layer () includes indium tin oxide as a main component. The electrical conductor () reflects a radio wave. The dielectric layer () is disposed between the resistive layer () and the electrical conductor () in the thickness direction of the resistive layer (). The dielectric layer () is formed of a polymer. The content of tin oxide in the indium tin oxide included in the resistive layer () is more than 0 weight % and less than 20 weight %. The number of hydrogen atoms included in the resistive layer () is 5% or more of the total number of indium atoms, tin atoms, oxygen atoms, and hydrogen atoms included in the resistive layer ().

Radio wave absorber and laminate for radio wave absorbers

An electromagnetic wave absorber () includes a dielectric layer (), a resistive layer (), and an electrically conductive layer (). The resistive layer () is disposed on one principal surface of the dielectric layer (). The electrically conductive layer () is disposed on the other principal surface of the dielectric layer () and has a sheet resistance lower than a sheet resistance of the resistive layer (). The resistive layer () has a sheet resistance of 200 to 600&#x3a9;/&#x25a1;. When the resistive layer () is subjected to an immersion treatment in which the resistive layer () is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer () before the immersion treatment and a sheet resistance of the resistive layer () after the immersion treatment is less than 100&#x3a9;/&#x25a1;.

Electromagnetic wave absorber and electromagnetic wave absorber-attached molded article

A heater () includes a support () made of an organic polymer and having a sheet shape, a heating element (), and at least one pair of power supply electrodes () in contact with the heating element (). The heating element () is a transparent conductive film made of a polycrystalline material containing indium oxide as a main component. In the heater (), the heating element () has a specific resistance of 1.4&#xd7;10&#x3a9;&#xb7;cm to 3&#xd7;10&#x3a9;&#xb7;cm. The heating element () has a thickness of more than 20 nm and not more than 100 nm.

Heater

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Piezoelectric device with orientation control layer formed of sazo and manufacturing method thereof

An electromagnetic wave absorber () includes a dielectric layer (), a resistive layer (), and an electrically conductive layer (). The resistive layer () is disposed on one principal surface of the dielectric layer (). The electrically conductive layer () is disposed on the other principal surface of the dielectric layer () and has a sheet resistance lower than a sheet resistance of the resistive layer (). The resistive layer () is a layer that includes tin oxide or titanium oxide as a main component or a layer that is made of indium tin oxide including 40 weight % or more of tin oxide.

A heater member () includes a support (), a heating element (), and at least one pair of power supply electrodes (). The support () is made of an organic polymer and has a sheet shape. The heating element () is made of a polycrystalline material containing indium oxide as a main component and in contact with one principal surface of the support (). The power supply electrodes () are in contact with one principal surface of the heating element (). The heating element () has a sheet resistance in the range from 10 to 150 &#x3a9;/sq. The heating element () has a thickness of more than 20 nm and not more than 200 nm. The internal stress of the heating element () as measured by an X-ray stress measurement method is 500 MPa or less.

Heater member, heater tape, and molded body equipped with heater member

A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Growing community of inventors

Ibaraki, Japan

Hironobu Machinaga