Mitsui Minings & Melting Co., Ltd.

Hironari Urabe

Takashi Kubota

Yoshinori Matsuura

Ryoma Tsukuda

Yoshinori Matsurra

With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al&#x2014;Ni&#x2014;B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.

Al-Ni-B alloy material for reflective film

The present invention provides Al&#x2014;Ni-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n-Si.

Al-Ni-based alloy wiring material and element structure using the same

The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n-Si. The Al&#x2014;Ni&#x2014;B alloy wiring material according to the present invention is configured such that the nickel content X at %, the nickel atomic percent, and the boron content Y at %, the boron atomic percent, satisfy the following equations: 0.5&#x2266;X&#x2266;10.0, 0.05&#x2266;Y&#x2266;11.0, Y+0.25X&#x2267;1.0 and Y+1.15X&#x2266;11.5, and the remainder is aluminum.

Growing community of inventors

Ageo, Japan

Hironari Urabe