Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Tokyo Electron Limited

Hironari Takahashi

Yasuhiro Ueda

A polysilicon film which realizes an excellent ohmic contact is obtained. A board 4 to which a silicon substrate 3 is fixed is disposed within a chamber 1. An SiH.sub.4 gas, an N.sub.2 gas, a TEOS gas and an anhydrous HF gas are introduced into the chamber 1, through valves 8a, 8b, 8c and 8d, respectively. By means of a pump 7 through a valve 6, the air inside the chamber 1 is exhausted. The chamber 1 is heated up by a heater 2. First, the N.sub.2 gas, the TEOS gas and the anhydrous HF gas are introduced into the chamber 1, to remove a silicon natural oxidation film 34 which is formed on the silicon substrate 3. Next, after exhausting the air inside the chamber 1, the SiH.sub.4 and the N.sub.2 gas are introduced into the chamber 1, to form a polysilicon film 35 on the silicon substrate 3. Since the silicon natural oxidation film 34 and particles do not exist between the silicon substrate 3 and the polysilicon film 35 by employing this process, the polysilicon film 35 having an excellent ohmic contact is obtained.

Apparatus for manufacturing semiconductor device and method of removing

A vacuum CVD apparatus including a reaction chamber into which a fluorine-containing compound gas and a carrier gas are introduced for cleaning. The fluorine-containing compound gas reacts with the matter deposited on the inner surface of the reaction chamber to gasify and remove the matter, preventing contamination of a semiconductor wafer later placed in the reaction chamber. Thus, it is possible to achieve high reliability of VSLIs produced in the reaction chamber.

Method of cleaning CVD apparatus

In a semiconductor device manufacturing apparatus for forming silicon oxide films on semiconductor wafers by reduced-pressure CVD, anhydrous HF gas and an interhalogen compound gas are introduced along with a carrier gas to a reaction chamber or a vacuum evacuation pipe. The anhydrous HF gas and the interhalogen compound gas react with deposits adhering to an inner wall of the reaction chamber and the vacuum evacuation pipe so that the deposits are decomposed into gases and removed. Particles attributable to the deposits are prevented from adhering to the semiconductor wafers.

Semiconductor device manufacturing apparatus and cleaning method for the

Vacuum CVD apparatus

A reduced pressure processing apparatus includes a processing vessel for performing predetermined processing to an object to be processed in a reduced pressure atmosphere, an exhaust mechanism, including a main exhaust system having a relatively high exhaust pressure and a sub-exhaust system having a relatively low exhaust pressure, for evacuating the processing vessel, and an oxygen gas concentration sensor for detecting an oxygen gas concentration in the processing vessel during exhaust performed by the sub-exhaust system. The oxygen gas concentration in the processing vessel is detected while the processing vessel is evacuated with a relatively low exhaust pressure. It is determined whether leakage is present or absent by confirming a detection value is a predetermined value or less within a predetermined period of time. When leakage is absent, the processing vessel is evacuated with the relatively high exhaust pressure. When leakage is present, the exhaust is interrupted, and necessary processing is performed. When the processing vessel is set in a desired reduced pressure state, predetermined processing is performed to the substrate.

Growing community of inventors

Itami, Japan

Hironari Takahashi