Jsr Corporation

Hiromu Miyata

Koji Ito

Hirokazu Sakakibara

Taiichi Furukawa

Masafumi Hori

Hiromitsu Nakashima

Masafumi Yoshida

Toru Kimura

Yukio Nishimura

Hayato Namai

Yusuke Asano

Kazuki Kasahara

Reiko Kimura

The present invention relates to a radiation-sensitive resin composition that contains: a compound that has a structure represented by the following formula (1); a first polymer that includes a fluorine atom; and a solvent. In the following formula (1), X represents a carbonyl group, a sulfonyl group or a single bond. Yrepresents a monovalent radiation-degradable onium cation. The first polymer preferably has at least one selected from the group consisting of a structural unit represented by the following formula (2a) and a structural unit represented by the following formula (2b). The first polymer preferably includes an alkali-labile group. The first polymer preferably includes an acid-labile group. It is preferred that a radiation-sensitive acid generator is further contained. 

Radiation-sensitive resin composition and resist pattern-forming method

A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. Rrepresents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Rrepresents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents &#x2014;COO&#x2014;*, &#x2014;OCO&#x2014;*, &#x2014;O&#x2014;, &#x2014;S&#x2014;, or &#x2014;NH&#x2014;, wherein '*' indicates a site bonded to R. Rrepresents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group. 

Photoresist composition and resist pattern-forming method

A pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The resist film is exposed. The exposed resist film is developed using a developer having an organic solvent content of 80 mass % or more. The photoresist composition includes a first polymer, a second polymer, and an acid generator. The first polymer is a base polymer and includes a first structural unit that includes an acid-labile group. The second polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer. The second structural unit is represented by a formula (1) or a formula (2). 

Pattern-forming method

A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Resist pattern-forming method, and radiation-sensitive resin composition

A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.

Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film

A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value &#x3b3; of from 5.0 to 30.0. The contrast value &#x3b3; is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.

Resist pattern-forming method

A radiation-sensitive resin composition includes an acid-labile group-containing polymer and photoacid generator. The radiation-sensitive resin composition is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass % or more. The radiation-sensitive resin composition has a contrast value &#x3b3; of 5.0 to 30.0. The contrast value &#x3b3; is calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent.

Method for forming resist pattern

A radiation-sensitive composition includes (A) a first polymer which becomes alkali-soluble by the action of an acid and does not contain a fluorine atom, (B) a second polymer having a repeating unit (b1) shown by the following formula (1) and a fluorine-containing repeating unit (b2), and (C) a radiation-sensitive acid generator, the content of the second polymer (B) in the composition being 0.1 to 20 parts by mass relative to 100 parts by mass of the first polymer (A). wherein Rrepresents a monovalent organic group, and Rrepresents a linear or branched alkyl group having 1 to 12 carbon atoms. The composition can form a resist film capable of suppressing defects inherent to liquid immersion lithography such as watermark defects and bubble defects.

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Tokyo, Japan

Hiromu Miyata