Nippon Telegraph and Telephone Corporation

Hiromu Ishii

Makoto Sato

Katsuyuki Machida

Toshishige Shimamura

Fusao Shimokawa

Johji Yamaguchi

Shingo Uchiyama

Kunihiko Sasakura

Yasuyuki Tanabe

Hirofumi Morita

Hakaru Kyuragi

Masami Urano

Shuichiro Inagaki

Makoto Murakami

Shouji Yagi

Tomomi Sakata

Satoshi Shigematsu

Norio Sato

Hiroki Morimura

Tadao Nagatsuma

Yoshinobu Arita

Yuji Uenishi

Kunio Saito

Takanori Kiyokura

Toshihiko Kosugi

A mirror device includes a mirror () which is supported to be pivotable with respect to a mirror substrate (), a driving electrode (---) which is formed on an electrode substrate () facing the mirror substrate, and an antistatic structure () which is arranged in a space between the mirror and the electrode substrate. This structure can fix the potential of the lower surface of the mirror and suppress drift of the mirror by applying a second potential to the antistatic structure.

Mirror device, mirror array, optical switch, mirror device manufacturing method, and mirror substrate manufacturing method

When a mirror () rotates with a maximum angle, a distance from the rotation center of the mirror () to the edge of the mirror () along a direction horizontal to an electrode substrate () is larger than a distance from a perpendicular, perpendicular to the horizontal direction and extending through the rotation center, to the distal end of an electrode (-) along the horizontal direction. Even when the mirror () rotates to come into contact with the electrode substrate (), since the electrode (-) does not exist at a position with which the mirror () comes into contact when rotating, the mirror () and the electrode (-) can be prevented from being electrodeposited.

Mirror device and mirror device manufacturing method incorporating a collision preventive structure

In a semiconductor device having a MEMS according to this invention, a plurality of units having movable portions for constituting a MEMS are monolithically mounted on a semiconductor substrate on which an integrated circuit including a driving circuit, sensor circuit, memory, and processor is formed. Each unit has a processor, memory, driving circuit, and sensor circuit.

Method of manufacturing a semiconductor device having MEMS

A method of manufacturing a surface shape recognition sensor. A sacrificial film is formed on an interlevel dielectric to cover a lower electrode while keeping an upper portion of a support electrode exposed. An upper electrode is formed on the sacrificial film and support electrode. The sacrificial film is selectively removed and a protective film is formed on the upper electrode. A photosensitive resin film having photosensitivity is formed on the protective film. A plurality of projections are formed in a region of the protective film above a capacitive detection element. In this manner a plurality of capacitive detection elements each having the lower electrode and upper electrode are formed.

Method of manufacturing recognition sensor

Semiconductor device having MEMS

In a micromachine according to this invention, a polyimide film is formed on the surface of each electrode. The polyimide film is formed as follows. A substrate having each electrode and a counterelectrode are dipped in an electrodeposition polyimide solution, and a positive voltage is applied to the electrode. A material dissolved in the electrodeposition polyimide solution is deposited on a surface of the positive-voltage-applied electrode that is exposed in the solution, thus forming a polyimide film on the surface.

Micromachine and manufacturing method

A surface shape recognition sensor includes capacitive detection elements, support electrode, protective film, and projections. The detection elements are formed from lower electrodes and a deformable plate-like upper electrode made of a metal. The lower electrodes are insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate. The upper electrode is laid out above the lower electrodes at a predetermined interval and has opening portions. The support electrode is laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode. The protective film is formed on the upper electrode to close the opening portions. The projections per one pixel are laid out in a region of the protective film above the capacitive detection element.

Surface shape recognition sensor and method of manufacturing the same

An optical switch device includes at least an optical switch element and driving control circuit. In the optical switch element, a fixed electrode portion is arranged, via a dielectric layer, on a semiconductor substrate on which an integrated circuit is formed. A mirror structure has a plate-shaped movable portion arranged above the fixed electrode portion while opposing the fixed electrode portion. A reflecting portion is formed at least at part of the movable portion to reflect light. A support member is fixed around the fixed electrode portion on the semiconductor substrate via a dielectric layer and supports the mirror structure. The driving control circuit is incorporated in the integrated circuit to drive the optical switch element by applying a predetermined potential to the movable portion and fixed electrode portion.

Optical switch device

A surface shape recognition sensor of this invention has a surface protective film having a hydrophobic property on an insulating protective film which is made of an insulator and formed to cover a sensor electrode, and includes at least a ground electrode which is formed on the substrate such that the ground electrode is partly exposed on the surfaces of the insulating protective film and surface protective film so as to be insulated/isolated from the sensor electrode and come into contact with the surface of a detection target. This sensor prevents fingerprint residues from easily remaining and improves tamper resistance.

A micromachine manufacturing method according to this invention includes at least the movable portion formation step of selectively etching a single-crystal silicon layer by using a movable portion formation mask pattern as a mask, thereby forming on the single-crystal silicon layer a movable portion which is coupled to the surrounding single-crystal silicon layer via a coupling portion on a buried oxide, the movable portion protective film formation step of forming a movable portion protective film on the single-crystal silicon layer so as to cover the movable portion while the movable portion is formed on the buried oxide, and the step of forming a buried protective film which covers the movable portion exposed in the substrate opening and movable portion opening, and the single-crystal silicon layer around the movable portion while the movable portion protective film is formed.

Micromachine manufacturing method

In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.

Pattern forming method

According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.

Growing community of inventors

Kanagawa, Japan

Hiromu Ishii