Kabushiki Kaisha Toshiba

Hiromitsu Wakabayashi

Yasunobu Onishi

Kazuo Sato

Rumiko Hayase

Kenji Chiba

Hirokazu Niki

Naohiko Oyasato

Takao Hayashi

Satoshi Saito

Naoko Kihara

Makoto Nakase

Masayuki Oba

A resist comprising a sulfonyl compound represented by the following general formula (1): ##STR1## wherein R.sup.1 is a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.2 is a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.3 is a bivalent organic group, and n is an integer of 2 or more. The R.sup.3 in the general formula (1) is preferably a bivalent organic group represented by the general formula (2): ##STR2## wherein R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25 and R.sup.26 may be the same or different and are individually a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, and Z is a bivalent organic group.

Resist, method of forming a resist pattern and manufacturing an

A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).

Resist composition for forming a pattern and method of forming a pattern

A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).

Resist composition for forming a pattern comprising a pyridinium

Growing community of inventors

Yokohama, Japan

Hiromitsu Wakabayashi