Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Sony Corporation

Nec Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Hiromitsu Takeda

Masako Nakahashi

Makoto Shirokane

Kiyoshi Iyogi

Tatsuo Yamazaki

Seiichi Suenaga

Hiroki Inagaki

Takao Suzuki

Shigeyoshi Hirashima

Takaaki Yasumoto

Tsutomu Okutomi

Nobuo Iwase

Shuichi Komatsu

Toshiki Kagami

Mikio Okawa

Mitsutaka Homma

Atsushi Kamata

Yoshiaki Haba

Toshirou Yanazawa

Shozi Niwa

Kenji Okamoto

Masayuki Itoh

Hiroshi Tokunaga

Atsushi Oda

Akio Hori

Masaaki Tamatani

Kazuyasu Takenaka

Shinichi Horii

Soichi Kuwahara

Yuji Yakura

Akihiko Tsuge

Hisashi Yoshino

Katsuhisa Ono

Naruhito Kondo

Naoki Shutoh

Takehito Inaba

Michihiko Ichinose

Kazumi Shimotori

Akihito Miyazaki

Takanori Takahashi

Kagetaka Amano

Yoshikazu Takahashi

Ken Fukamachi

Akira Ohashi

Shigeru Miyakawa

Akira Umezu

Masayuki Yamada

The semiconductor device includes a wiring substrate having a plurality of ball lands formed on a lower surface of a core layer, a solder resist film covering the lower surface of the core layer, a via conductor layer penetrating the core layer and connected to the ball lands, and an upper surface wiring formed on the upper surface of the core layer, the upper surface wiring having one end formed as a bonding land and the other end connected to the via conductor layer. The semiconductor device further includes a semiconductor chip arranged on the wiring substrate, a solder ball connected to the ball lands. The solder resist film has an eliminating portion that exposes the lower surface of the core layer, and the upper surface wiring has a thin-wire portion and a thick-wire portion, and when seen in a plan view, the thick-wire portion overlaps the eliminating portion.

Semiconductor device

A semiconductor device is provided which complies with restrictions on layout on a mounting substrate side. The semiconductor device includes a wiring substrate having a plurality of bonding leads at an upper surface having a rectangular shape, a semiconductor chip mounted over the upper surface of the wiring substrate, and having a plurality of electrode pads at a main surface having a rectangular shape similar to a square shape, and a plurality of metal wires for coupling the bonding leads of the wiring substrate to the electrode pads of the semiconductor chip. In a BGA, the metal wires are arranged at three sides of a main surface of the semiconductor chip, the bonding leads are provided in lines at the upper surface of the wiring substrate outside the respective opposed short sides of the main surface of the semiconductor chip, and the metal wires are coupled to the bonding leads.

Semiconductor device and manufacturing method thereof

A substrate has a plurality of pads formed over one surface of a base, and an insulating film which is formed thereon and has a plurality of openings formed therein so as to expose each of the pads, wherein the openings of the insulating film are formed so that, in each pad formed at the corner of the base, among the plurality of pads, a first peripheral portion which composes a portion of the pad more closer to the corner and more distant away from the center of the base is covered by the insulating film, and so that a second peripheral portion which composes a portion of the pad more closer to the center as compared with the first peripheral portion is exposed in the opening.

Substrate and semiconductor device

A printer is provided which sprays ink from nozzles to print recording paper P. It includes a paper feed/delivery mechanism () to carrying the paper P to which the ink is to adhere, nozzles () to spray the ink as droplets, an ink-spraying head () to spray the ink from the nozzles toward the paper P having been carried to a position opposite to the nozzles, an ink-spraying controller () to control the ink-spraying head () to spray the ink from the nozzles in predetermined timing, a temperature sensor () to detect the ambient temperature and/or humidity when spraying the ink from the nozzles, a speed discrimination unit () to judge whether the carrying speed of the paper P has been changed, a memory () having stored therein ink-spraying control data intended for controlling the spraying timing correspondingly to the type of the paper P, and a controller () to delay, when the carrying speed of the paper P has been increased in the process of printing, the timing of spraying ink in other color than black based on the temperature detected by the temperature sensor and ink-spraying control data for the type of the paper P, pre-stored in the memory, in relation to that which is before the carrying speed of the paper P is increased, thereby projecting the other ink than the black ink to a position to which the black ink is to be projected.

Liquid spraying apparatus and method

A platen plate for supporting an ejection object for liquid droplets ejected from each nozzle on the bottom surface of a liquid ejection head can secure the flatness of the ejection object so as to appropriately eject ink as well as can prevent the contamination of the bottom surface of the ejection object. The platen plate is provided with a plurality of ribs raised from its bottom surface so as to extend in a conveying direction of a recording sheet and arranged at predetermined intervals in a width wise direction of the recording sheet, and out of a region where ink droplets ejected from the each nozzle are landed, the bottom surface of the recording sheet is supported with top faces of the ribs so as to define a distance between the recording sheet and the ink ejection surface, and within the region where ink droplets ejected from the each nozzle are landed, the rib top faces are formed to have a height, or the ribs themselves do not exist, so that the rib top faces are not brought into contact with the bottom surface of the recording sheet.

Platen plate and liquid discharging device

Disclosed herein is a printer having a printer body and a consumable related to printing means, such as an ink cartridge and an ink ribbon, wherein the consumable can be very easily replaced and the electrical connection between the consumable and the printer body can be easily effected. In a printer ( ) having a printer body ( ) and an ink cartridge (consumable related to printing means) ( ) replaceably mounted in the printer body, an ink cartridge tray (consumable tray) ( ) for detachably storing the ink cartridge is movably provided in the printer body. A connector ( ) provided on the ink cartridge is connected to a connector ( ) provided in the printer body when the ink cartridge tray is inserted into the printer body.

Printer

Disclosed is a thermoelectric module, comprising a plurality of p-type thermoelectric elements each comprising a p-type semiconductor having a skutterdite crystal structure, a plurality of n-type thermoelectric elements each comprising a n-type semiconductor having a skutterdite crystal structure, at least one first electrode, at least one second electrode, at least one first alloy layer and at least one second alloy layer, wherein said at least one first alloy layer and said at least one second alloy layer contain Sb and at least one transition metal element selected from the group consisting of Ag, Au and Cu.

Thermoelectric module and heat exchanger

There is provided a lead frame including first and second rows of inner leads each of which is electrically connected to an associated electrode of a semiconductor chip and which are situated at opposite sides about the semiconductor chip, first and second rows of outer leads each of which is electrically connected to an associated inner lead in the first and second rows of inner leads, respectively, a tie bar connecting a first outermost inner lead in the first row of inner leads to a second outermost inner lead in the second row of inner leads, and a control plate comprised of first branches extending from the first outermost inner lead towards the second outermost inner lead and second branches extending from the second outermost inner lead towards the first outermost inner lead, the control plate being connected to the tie bar. Since the control plate is connected to the tie bar, the control plate is stabilized without being influenced by flow of resin introduced into a cavity in a step of sealing a semiconductor device with resin.

Lead frame and method of fabricating semiconductor device including the lead frame

A hybrid leadframe has first conductive leads extending into space over a semiconductor chip and second conductive leads outside the space, the first conductive leads and the second conductive leads are connected through bonding wires to bonding pads on the semiconductor chip, and the first conductive leads are directly adhered to insulating adhesive compound layers spread on predetermined area of the upper surface of the semiconductor device, wherein the second conductive leads are bifurcated so that one of the bifurcated portions is connected through the bonding wire to the bonding pad and the other bifurcated portion is adhered to the insulating adhesive compound layers so as to enhance the stability of the second conductive lead.

Hybrid leadframe having conductive leads less deformable and semiconductor device using the same

A composite material substrate comprises a matrix material and a skeleton structure of a fibrous material. The matrix material exclusively participates in the thermal expansion of the substrate and the fibrous material in the mechanical strength thereof. The fibrous material constituting the skeleton structure has no influence on the thermal expansion profile of the matrix material, and the skeleton structure is loosely bonded to the matrix material at their interface. The substrate is used for solar cells. Photoelectric transfer layers of semiconductors are formed on the substrate to fabricate large-sized solar cells.

Composite material substrate for solar cells, and solar cell

A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)

Method of forming polycrystalline silicon thin layer

A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.

Method of manufacturing a semiconductor device

According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, any vacuum furnace is not employed.

Brazing paste for bonding metal and ceramic

According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, vacuum furnace is not employed.

Growing community of inventors

Tokyo, Japan

Hiromitsu Takeda