Mitsubishi Chemical Corporation

Hiromitsu Kudo

Hiroaki Okagawa

Hirokazu Taniguchi

Shin Hiraoka

Takahide Joichi

Toshihiko Shima

Seong-Jin Kim

Teruhisa Nakai

A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.

Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element

A nitride semiconductor light-emitting diode elementincludes a nitride semiconductor layerhaving a bottom surface and an upper surface and containing a light emitting layerinside, and a supporting substratemade from a metal is bonded to the bottom surface of the nitride semiconductor layer. A light reflecting depression Ato reflect light generated in the light emitting layeris formed in the bottom surface of the nitride semiconductor layer. According to the nitride semiconductor light-emitting diode element, since the light generated from the light emitting layerand propagated in the nitride semiconductor layerin a layer direction is reflected by the light reflecting depression Aand its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layerwithin a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.

Nitride semiconductor light-emitting diode device

Growing community of inventors

Ibaraki, Japan

Hiromitsu Kudo