Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Hiromitsu Katsui

Wataru Nakamura

Shoji Okazaki

Yoshihiro Okada

Atsushi Ban

Yoshimasa Chikama

Takeshi Yaneda

Tetsunori Tanaka

Kenichi Kitoh

Tohru Sonoda

Kaoru Hatano

Takashi Hamada

Noritaka Kishi

Masanori Ohara

Takeshi Hara

Noboru Noguchi

Yoshiyuki Isomura

Shigetsugu Yamanaka

Yoshifumi Ohta

Okifumi Nakagawa

Kikuo Miyata

A data line drive circuit provides a voltage according to a detection voltage and to a reference voltage, between the gate and source of a drive transistor in a pixel circuit, and detects a drive current having passed through the drive transistor and outputted external to the pixel circuit. A threshold voltage correction memory stores, for each pixel circuit, data representing a threshold voltage of the drive transistor. A display control circuit controls the reference voltage based on the data stored in the threshold voltage correction memory. By this, even if the threshold voltage of the drive transistor is changed, the drive current can be detected with a high accuracy. The threshold voltage correction memory may store, for each pixel circuit, data representing a difference between the threshold voltage of the drive transistor and the reference voltage.

Display device and drive current detection method for same

Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.

Light-emitting device comprising partition including overhang portion

A drain electrode () includes (i) a lower drain electrode () stacked on a semiconductor layer () so as to partially cover an upper surface of the semiconductor layer () and (ii) an upper drain electrode (). The semiconductor layer (), the lower drain electrode (), and the upper drain electrode () form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode () and a periphery of the upper drain electrode () is more than 0.4 &#x3bc;m but less than 1.5 &#x3bc;m.

Active matrix substrate, display panel, and display device

An IZO layer () is formed on an a-ITO layer (), and resist patterns (R,G) having different film thicknesses are formed in at least sub-pixels (R,G). The a-ITO layer () and the IZO layer () are etched by utilizing (i) a reduction in thickness of the resist patterns (R,G) by ashing and (ii) a change in etching tolerance due to transformation from the a-ITO layer () into a p-ITO layer ().

Method for manufacturing display device

The semiconductor device () according to the present invention includes a gate electrode () of a TFT, a gate insulating layer () formed on the gate electrode (), an oxide semiconductor layer () disposed on the gate insulating layer (), a protecting layer () formed on the oxide semiconductor layer () by a spin-on-glass technique, and a source electrode () and a drain electrode () disposed on the protecting layer (). Via a first contact hole () formed in the protecting layer (), the source electrode () is electrically connected to the oxide semiconductor layer (), and via a second contact hole (), the drain electrode () is electrically connected to the oxide semiconductor layer ().

Semiconductor device, display device, and production method for semiconductor device and display device

A semiconductor device () according to the present invention includes a plurality of source lines (), a thin film transistor (A), and a diode element (A) that electrically connects two source lines () among the plurality of source lines (). A connection region () in which the source lines () and the diode element (A) are connected to each other includes a first electrode (), a second electrode (), a third electrode (), and a fourth electrode (). A part of each source line () is a source electrode of the thin film transistor (A), and the second electrode () and the source lines () are formed separately from each other.

Semiconductor device and process for production thereof

A semiconductor device () includes: a gate electrode () formed on a substrate (); a semiconductor layer () formed above the gate electrode () and including a source region, a drain region, and a channel region; a source electrode () connected to the source region above the semiconductor layer (); and a drain electrode () connected to the drain region above the semiconductor layer (). The semiconductor layer () has, at a portion overlapping the drain electrode (), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (). At an outside of the channel region sandwiched between the drain electrode () and the source electrode (), the semiconductor layer () has an adjustment portion where an outer boundary of the semiconductor layer () is positioned more inward than an outer boundary of the gate electrode ().

Semiconductor device, active matrix substrate, and display device

A wiring board is provided which can prevent a metal electrode from corroding due to a defect in a transparent conductive electrode covering an end face of an organic insulating film. An active-matrix substrate includes: a glass substrate; a metal wire provided on the glass substrate; a gate insulating film covering the metal wire; an interlayer insulating film covering the gate insulating film; and a transparent electrode formed on the interlayer insulating film. The scanning wire provided with a terminal area where the transparent electrode is laminated directly on the scanning wire. The transparent electrode extends over the terminal area in such a way as to cover an end face of the interlayer insulating film that faces the terminal area and an end face of the gate insulating film that faces the terminal area.

Wiring board, method for manufacturing same, display panel, and display device

An active matrix substrate includes a plurality of scanning lines () extending parallel to each other; a plurality of signal lines () extending parallel to each other in a direction crossing the scanning lines (); a plurality of TFTs () each provided at each of intersections of the scanning lines () and the signal lines (), and each including a semiconductor layer (); and a coating type insulating layer formed between each of the scanning lines () and each of the signal lines (). A plurality of openings () are formed in the insulating layer such that each of the semiconductor layers () is exposed, and at least part of a peripheral end of the opening () of the insulating layer is positioned on an inner side relative to each of peripheral ends of the semiconductor layers ().

Active matrix substrate and method for manufacturing the same

An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.

Growing community of inventors

Osaka, Japan

Hiromitsu Katsui