Casio Computer Co., Ltd.

Kochi Industrial Promotion Center

Hiromitsu Ishii

Yayoi Nakamura

Shinichi Shimomaki

Makoto Sasaki

Ikuhiro Yamaguchi

Kunihiro Matsuda

Shigeru Morikawa

Naohiro Konya

Motohiko Yoshida

Hitoshi Hokari

Hitoshi Watanabe

Kazuhiro Sasaki

Syunichi Sato

Hisatoshi Mori

Takashi Hirao

Takahiro Hiramatsu

Mamoru Furuta

Hiroshi Furuta

Tokiyoshi Matsuda

Ichiro Ohno

Makoto Miyagawa

Junji Shiota

Tetsuo Muto

Tsuneharu Takeda

Minoru Yamaguchi

Toshiaki Higashi

Minoru Fujiwara

Kyuya Baba

Hisao Tosaka

Shintaro Kuwayama

Yoshitomo Wada

A display device includes a liquid crystal layer between transparent first and second substrates. A transparent first segment electrode is formed on the first substrate so that a predetermined area becomes a positive pattern with respect to a predetermined display information, and a transparent second segment electrode is formed on the first substrate so that a predetermined area becomes a negative pattern with respect to the display information. The first and second segment electrodes are formed as a same first layer. A transparent common electrode is formed on the second substrate facing the first and second segment electrodes. A transparent auxiliary electrode is formed as a second layer on the first substrate along a gap between the first and second segment electrodes. The auxiliary electrode is connected to the second segment electrode via a contact hole in an insulating film interposed between the first and second layers.

Display device and camera

A display apparatus includes a first gate line extended in a predetermined direction; a second gate line extended in parallel to the first gate line; a first gate output terminal corresponding to the first gate line; a second gate output terminal corresponding to the second gate line; a first gate leading line electrically connecting the first gate line to the first gate output terminal; a second gate leading line electrically connecting the second gate line to the second gate output terminal and having a length longer than said first gate leading line; and a static electric protection line disposed so as to overlap the first gate leading line and the second gate leading line with an insulating layer interposed between said static electric protection line and the first and second gate leading lines, wherein an overlapping area between the first gate leading line and the static electric protection line is larger than an overlapping area between the second gate leading line and the static electric protection line.

Display apparatus with gate leading lines of differing lengths

A liquid crystal display device, includes: a gate line () provided as a first conductive layer to extend the gate line in a predetermined direction; a thin film transistor () including a gate electrode () connected to the gate line (); a first pixel electrode () provided as a second conductive layer closer to a liquid crystal layer () side than the first conductive layer; a shielding electrode () provided as a conductive layer to be closer to the liquid crystal layer side than the first conductive layer and provided in a region between a location region of the gate line () and a location region of the first pixel electrode (); a connection portion () provided to at least partially overlap the shielding electrode () and provided to be closer to the first conductive layer side than the shielding electrode (), the connection portion connecting a source electrode () of the thin film transistor () with the first pixel electrode (); and a common electrode () which is opposing the first pixel electrode () via the liquid crystal layer () and is set to have the same potential as the shielding electrode ().

Liquid crystal display device

A liquid crystal display device achieving high aperture rate and high definition is disclosed. The liquid crystal display device comprises a plurality of scanning lines, an insulating filmcovering the plurality of scanning lines, a plurality of signal lineshaving an intersectionD with each of the scanning lines, pixel electrodes formed adjacent to the scanning line and the signal line, a plurality of thin film transistors, each of which having a gate electrode, drain electrode, and source electrode, a gate electrode connected to a semiconductor layer, a gate insulating film, and the scanning lines, a drain electrodeor a source electrodeconnected to the signal lines, the other of the drain and the source electrodes connected to the pixel electrode, the drain electrode and the source electrode are linearly disposed along the signal lines, and a plurality of relay electrodesin which a first overlapped portionoverlaps the intersectionD and a second overlapped portionoverlaps one of the electrodes, thus connecting that electrode to the signal lines. The first overlapped portion of the relay electrode has a length sufficient to cover the stepped portionsE,D of the insulating filmcorresponding to the both endsof the scanning linein a width direction.

Interconnection structure between signal line and thin film transistor

A liquid crystal display device with multiple pixels includes a first sub-pixel including, a first liquid crystal capacitance between a common electrode and a first pixel electrode, and a first auxiliary capacitance between the first pixel electrode and a first auxiliary capacitance electrode; a second sub-pixel including, a second liquid crystal capacitance between the common electrode and a second pixel electrode, a second auxiliary capacitance between the second pixel electrode and a second auxiliary capacitance electrode, and a step-down capacitance between the second pixel electrode and a step-down capacitance electrode; a first voltage application unit for applying a common first voltage to the common electrode, the first auxiliary capacitance electrode, and the second auxiliary capacitance electrode; and a second voltage application unit for applying a second voltage, which is different from the first voltage, to the step-down capacitance electrode.

A liquid crystal display device is disclosed comprising a display part, a scanning line driving circuit, a signal line driving circuit, a counter electrode driving circuit for providing counter electrodes with a counter electrode driving signal reversed in phase from a signal line driving circuit, an auxiliary capacitance having one end connected to an output end of each of switching elements, and an auxiliary capacitance line driving circuit for driving a plurality of auxiliary capacitance lines arranged in rows and has ends of such auxiliary capacitances in each row commonly connected thereto, wherein the auxiliary capacitance line driving circuit is adapted to apply a first voltage to the auxiliary capacitance lines for a first half cycle of the counter electrode driving signal and apply a second voltage thereto for a (p+&#xbd;)th cycle after the first period of the counter electrode driving signal where p is 0 or a natural number, said auxiliary capacitance line driving circuit making the auxiliary capacitance line in a floating condition after said (p+&#xbd;) th cycle during the remaining holding time.

Liquid crystal display device and its driving method

A thin-film transistor panel includes a substrate, and a thin-film transistor formed on the substrate. The transistor includes a gate electrode, a gate insulating film, a semiconductor thin film, first and second ohmic contact layers formed on the semiconductor thin film, and source and drain electrodes which are respectively formed on the first and second ohmic contact layers. The semiconductor thin film includes a channel area between the source electrode and the drain electrode. A pixel electrode is connected to the source electrode of the thin-film transistor. First and second conductive coating films are provided on the source and drain electrodes, respectively, and formed of the same material as the pixel electrode. The first conductive coating film is wider than the source electrode, and the second conductive coating film is wider than the drain electrode.

Thin-film transistor panel having structure that suppresses characteristic shifts and method for manufacturing the same

A display includes a substrate provided with a display region and a non-display region. A plurality of display electrodes are arranged on the substrate. A plurality of switching elements are respectively connected to the display electrodes. Each of the switching elements includes a control electrode and a data electrode. A plurality of scan lines are respectively connected to the control electrodes of the switching elements. A plurality of data lines are respectively connected to the data electrodes of the switching elements. A scan line electrostatic protection and test circuit is provided in the non-display region and connected to the scan lines The scan line electrostatic protection and test circuit includes an electrostatic protection circuit provided with a protection element which is normally in a non-conduction state and is set in a conduction state by generated static electricity, and an inspection circuit to inspect a conduction state of the scan lines by way of the protection element.

Liquid crystal display comprising electrostatic protection circuit and test circuit

A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Manufacturing method of thin film transistor including low resistance conductive thin films

A liquid crystal display device provides, on the internal side of one substrate of a pair of substrates a plurality of pixel electrodes, a plurality of TFTs, a plurality of scan lines and signal lines, and a plurality of convex sections each formed on the internal side of the other substrate so as to be located substantially on a center part of each of the plurality of predetermined regions provided in each of the plurality of pixels. Further, the liquid crystal display device provides an opposing electrode on the internal side of the one substrate. Then, the liquid crystal display device provides vertical alignment films on the respective internal sides of the pair of substrates, and a liquid crystal layer having negative dielectric anisotropy and inserted in the gap between the pair of substrates.

A display device includes a substrate having a display area; a plurality of scanning lines and a plurality of data lines, arranged in the display area over the substrate, wherein the data lines extend substantially orthogonally to the scanning lines; a plurality of switching elements each connected to respective one of the scanning lines and to respective one of the data lines; a plurality of pixel electrodes each connected to respective one of the switching elements; and a plurality of storage capacitance lines disposed substantially in parallel with the data lines, each of the storage capacitance lines having a portion overlapping with a portion of the pixel electrode, the storage capacitance lines being disposed on a plane on which the data lines are disposed and being made of the same material as the data lines.

Display device

A thin film transistor panel, including: a transparent substrate; scanning lines made of a transparent electroconductive material, formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data line, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover each of the thin film transistors.

Thin film transistor panel

A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.

Thin film transistor having oxide semiconductor layer and manufacturing method thereof

A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Growing community of inventors

Mitaka, Japan

Hiromitsu Ishii