Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Hiromichi Ohashi

Akio Nakagawa

Ichiro Omura

Yoshihiro Yamaguchi

Tsuneo Ogura

Kiminori Watanabe

Thuneo Thukakoshi

Wataru Saito

Takashi Shinohe

Kenichi Tokano

Yoshihiko Saito

Tomoki Inoue

Masayuki Nakamoto

Hideaki Ninomiya

Masaru Shimbo

Katsuhiko Takigami

Wolfgang Fichtner

Tadashi Sakai

Tomio Ono

Mitsuhiko Kitagawa

Koichi Sugiyama

Kazuyoshi Furukawa

Masakazu Yamaguchi

Naoshi Sakuma

Kazuya Nakayama

Tomiya Sasaki

Tomokazu Domon

Suzuo Saito

Yoshinari Uetake

Yoshio Yokota

Kiyoshi Fukuda

Kazuo Watanuki

Yoshio Kamei

Masaru Ishizuka

Asako Matsuura

Shigeki Monma

Tsuneo Tsukakoshi

Masayuki Asaka

Simon Eicher

Yoshihiro Shirasaka

Mituhiko Kitagawa

Yasuyuki Yokono

A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

Power semiconductor switching element

A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semi-conductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.

wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power control

A semiconductor device comprises a drain layer of first conductivity type, drift layers of first and second conductivity types on the drain layer, an insulating film between the drift layers and contacting the drift layers, a first base layer of second conductivity type on a surface of the drift layer of first conductivity type, a source layer of first conductivity type selectively provided on a surface of the first base layer of second conductivity type, a gate insulating film on the first base layer of second conductivity type between the source layer and the drift layer, a gate electrode on the gate insulating film, a second base layer of second conductivity type on a surface of the drift layer, a first main electrode on the drain layer, and a second main electrode on the source layer, the first base layer and the second base layer.

Semiconductor device and method of manufacturing the same

A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.

Power semiconductor device used for power control

Wideband gap having a low on-resistance and having a high avalanche capability

A power semiconductor device including a non-doped GaN channel layer, an n-type AlGaN barrier layer formed on the channel layer, a p-type AlGaN semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.

Power semiconductor device

Power semiconductor switching element provided with buried electrode

Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device. The semiconductor device comprises an n-type base layer, a p-type emitter layer, which is formed on a surface of the n-type base layer, a collector electrode, formed on a surface of the p-type emitter layer, a p-type base layer, formed on a surface on the n-type base layer which is opposite to the p-type emitter layer, an n-type source layer, formed in a surface of the p-type base layer, an emitter electrode, formed on the n-type source layer and the p-type base layer, and a gate electrode, contacting the n-type source layer, the p-type base layer and the n-type base layer, with a gate insulating film interposed therebetween, wherein when a voltage is applied between the collector electrode and the emitter electrode, the capacitance of the gate electrode is always a positive value or zero.

Semiconductor device and control method thereof

According to this invention, there is provided a drive apparatus for a power device having high- and low-voltage main electrodes and a control electrode, including a circuit for decreasing a voltage of the control electrode to a voltage of the control electrode which is not higher than a threshold voltage of the power device before a voltage between the high- and low-voltage main electrodes enters an overshoot region in a case where the power device is to be turned off. Therefore, electron injection can be stopped before the voltage between the main electrodes rises, the stability of the current density can be improved, and current concentration, oscillation, and the like can be prevented to improve reliability.

Semiconductor device, drive method, and drive apparatus

The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

Micro power switch using a cold cathode and a driving method thereof

A semiconductor device is disclosed, which comprises a first main electrode, a second main electrode, a high-resistance semiconductor layer of first conductivity type interposed between the first main electrode and the second main electrode, and at least a buried layer of second conductivity type selectively formed in the semiconductor layer, extending at substantially right angles to a line connecting the first and second main electrodes, comprising a plurality strips functioning as current paths and set at a potential different from a potential of any other electrode when a depletion layer extending from a region near the first main electrode reaches the buried layer.

Semiconductor device

A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

Conductivity modulated MOSFET

A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.

Micro-vacuum device

Growing community of inventors

Yokohama, Japan

Hiromichi Ohashi