Asahi Glass Company, Limited

Other

Hiromichi Nishimura

Kazuo Sato

Satoru Takaki

Masami Miyazaki

Yuki Kawamura

Takeshi Morimoto

Hiroyuki Fujita

Akira Mitsui

Kiyoshi Matsumoto

Atsushi Hayashi

Takuji Oyama

Kazuo Sunahara

Takashige Yoneda

Yasuo Hayashi

Yasuhiro Sanada

Satoshi Takeda

Fumiaki Gunji

Yoshihito Katayama

Makoto Fukawa

Yuko Tachibana

Hisashi Ohsaki

Masahiko Ichimura

Makoto Noshiro

The present invention has an object to provide an integrated circuit device having a Cu wiring, using a barrier layer which facilitates planarization. The present invention relates to an integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, wherein the barrier layer is represented by a compositional formula of TaO N (the range of x being 0<x<2.5, and the range of y being 0<y<1). Further, the present invention relates to an integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, wherein the barrier layer is represented by a compositional formula of Ta M O N (M being at least one member selected from the group consisting of elements of Groups 3, 4, 6, 7, 8, 9, 10, 12, 13 and 14 of the long form of the periodic table, the range of a being 0<a<1, the range of b being 0<b<2.5, and the range of c being 0<c<1).

Integrated circuit device and its manufacturing method

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Transparent conductive film and process for forming a transparent electrode

A light absorptive antireflector provided with a titanium oxy-nitride film having a geometrical film thickness of from 5 to 25 nm, wherein O/Ti (atomic ratio)&equals;0.11 to 0.33, and a film composed mainly of silica and having a geometrical film thickness of from 70 to 130 nm, and a process for its production.

Light absorptive antireflector and process for its production

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;l) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

A laminate comprising a substrate and at least one layer formed on the substrate, in which the outermost layer as a surface layer has a plurality of micropores therein and, at its surface, a flat portion and fine craters, said flat portion having a surface roughness R.sub.a of at most 3 nm and an area ratio of at least 20%.

Laminate and process for its production

Transparency of an ethylene-tetrafluoroethylene type copolymer is improved by an addition of at least one condensed ring compound selected from the group consisting of anthracenes, phenanthrenes, anthraquinones phenanthrenequinones and substituted derivatives thereof.

Fluorocopolymer composition having improved transparency

Growing community of inventors

Yokohama, Japan

Hiromichi Nishimura