Ngk Insulators, Inc.

Nkg Insulators, Ltd.

Hiromichi Kobayashi

Yuki Bessho

Yukimasa Mori

Toshio Oda

Tomonori Takahashi

Tsuneaki Ohashi

Naohito Yamada

Yoshiaki Matsushita

Ryusuke Ushikoshi

Hirotake Yamada

Satoru Yamada

Koichi Umemoto

Tetsuhisa Abe

Yutaka Furuse

Hiroshi Furukubo

Shinji Kawasaki

Kazuhiro Nobori

Masashi Ohno

Yusuke Niori

Atsushi Sakon

Toshihiko Honda

Mie Nagao

Kenji Kawabata

The present invention provides a ceramic structure for improving the resistance against a corrosive substance and to diffuse and supply a fluid over a larger area of the structure. A ceramic laminated article has a ceramic sintered body, and a ceramic film provided on the sintered body by means of chemical vapor deposition. A hollow surrounded by the sintered body and film, and holes in communication with the hollow and the outside are formed in the article. A filling material is filled in the recess of the sintered body and the holes are formed. The thus obtained assembly is heat treated to dissipate and remove the filling material through the communicating holes, so that the recess is left as the hollow.

Ceramic laminated article, a method of producing the same and a ceramic laminate

A ceramic sintered body has a dense portion and a porous portion. The dense portion is formed from sintered ceramic fine particles, and the porous portion is formed from sintered ceramic coarse particles. The fine particles and coarse particles are simultaneously subjected to pressure sintering to form the dense portion and porous portion.

Ceramic sintered bodies and a method of producing the same

Corrosion-resistive ceramic materials include a silicon based ceramic, wherein a percentage of respective metal elements other than metal elements constituting sintering agents and silicon is not more than 10 weight ppm. The corrosion-resistive ceramic materials show a high corrosion resistance with respect to corrosive substances and suppress particle generation due to an exposure to corrosive substances. Therefore, chippings and cracks do not occur easily during machining work.

Corrosion-resistive ceramic materials and members for semiconductor manufacturing

A film structure including a silicon carbide film formed on a surface of an aluminum nitride substrate. The substrate has a first base plane, a second base plane positioned downward with respect to the first base plane and a step plane arranged in an intersecting direction between the first base plane and the second base plane. One or more chamfered planes are arranged between the first base plane and the step plane so as to form a plurality of corner portions each having an angle larger than 130&deg;. Alternatively, at least one round portion having a curvature radium of larger than 0.05 mm is arranged between the first base plane and the step plane.

Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film

A method for reducing particles from an electrostatic chuck, wherein the difference between a wafer temperature before absorbing and a wafer maximum temperature after absorbing is 50&deg; C. or below when the wafer is absorbed onto the electrostatic chuck.

Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor

Ceramic sintered bodies having a different thickness along a predetermined axial direction are manufactured in the following manner. At first, a ceramic formed body to be sintered having different thickness along the predetermined axial direction is accommodated in a hot press apparatus. An upper forming mold and a lower forming mold each having a forming surface corresponding to an upper surface and a lower surface of the ceramic formed body to be sintered are set. A pressure along the predetermined axial direction is applied to the ceramic formed body to be sintered via the upper forming mold and the lower forming mold while heating the ceramic formed body to be sintered to perform a hot press sintering thereof. A thickness of a ceramic sintered body is controlled in such a manner that a maximum thickness in the predetermined direction is not more than two times a minimum thickness in the predetermined direction.

Method of manufacturing ceramic sintered bodies

A composite material has a quartz glass phase and a complex compound phase compounded with the quartz glass phase, which is made of one or more compounds selected from a group of silicon carbide, silicon nitride, silicon, titanium nitride and titanium carbide, as a main ingredient. The composite material can be used instead of quartz glass, and can prevent the generations of microcrack, tipping and particles after the mechanical working.

Composite material and method of producing the same

Ceramic sintered bodies having a different thickness along a predetermined axial direction are manufactured in the following manner. At first, a ceramic formed body to be sintered having different thickness along the predetermined axial direction is accommodated in a hot press apparatus. An upper forming mold and a lower forming mold each having a forming surface corresponding to an upper surface and a lower surface of the ceramic formed body to be sintered are set. A pressure along the predetermined axial direction is applied to the ceramic formed body to be sintered via the upper forming mold and the lower forming mold while heating the ceramic formed body to be sintered to perform a hot press sintering thereof. A thickness of a ceramic sintered body in such a manner that a maximum thickness in the predetermined direction is not two times larger or more than a minimum thickness in the predetermined direction.

An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0&times;10,&OHgr;&middot;cm and is smaller than 1.0&times;10,&OHgr;&middot;cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Aluminum nitride sintered body, metal including member, electrostatic chuck, method of producing aluminum nitride sintered body, and method of producing metal including member

A process for producing a bonded article of ceramic bodies comprising steps of: machining the ceramic bodies to be bonded to form machined surfaces with average surface roughnesses (Ra) of not more than 0.2 .mu.m and flatnesses of not more than 0.2 .mu.m; applying solution containing a bonding aid on at least one of the machined surfaces; contacting the machined surfaces with each other to produce an assembly; and subjecting the assembly to a heat treatment to produce the bonded article. The roughnesses and the flatnesses may preferably be not more than 0.1 .mu.m. The bonding aid may preferably be a sintering aid applicable to at least one of the ceramic bodies. The ceramic bodies may preferably be one or more material selected from a group consisting of aluminum nitride and silicon nitride. The bonding aid may preferably be one or more bonding aid selected from a group consisting of a substance of yttrium and a substance of ytterbium. In the article, a layer rich in elements contained in a bonding aid is formed along the bonding interface of the article and ceramic particles are grown across the bonding interface.

Bonded articles and a process for producing the same

An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0.times.10.sup.9 .OMEGA..multidot.cm and is smaller than 1.0.times.10.sup.13 .OMEGA..multidot.cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Aluminum nitride sintered body, metal including member, electrostatic

An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.

Apparatus for producing semiconductor using aluminum nitride bodies as

A coated ceramic member includes a silicon nitride- or silicon carbide-based ceramic base material, a silicon nitride or silicon carbide film formed on the base material by CVD, and an oxide film formed on the film of CVD, and a process for producing the ceramic-coated member. This coated ceramic member maintains excellent durability under severe conditions, for example, in a high-speed combustion gas.

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Yokkaichi, Japan

Hiromichi Kobayashi